Polymer and composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

Patent metadata

Field	Value
Publication number	US-10998197-B2
Application number	US-201816050320-A
Country	US
Kind code	B2
Filing date	Jul 31, 2018
Priority date	Aug 28, 2017
Publication date	May 4, 2021
Grant date	May 4, 2021

Abstract

The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.

First claim

What is claimed is:

1. A composition for forming an organic film, comprising:
(A) a polymer having a repeating unit shown by the following general formula (1); and
(B) an organic solvent,

wherein AR1, AR2, and AR3 each represent a benzene ring, a naphthalene ring, or an anthracene ring which optionally have a substituent; carbon atoms on aromatic rings of AR1 and AR2, or AR2 and AR3, optionally bond to each other directly or via a linking group to form a bridge structure; R 1 and R 2 each independently represent a hydrogen atom or an organic group having 1 to 30 carbon atoms; when R 1 and R 2 are the organic groups, R 1 and R 2 optionally bond to each other within a molecule to form a cyclic organic group; and Y represents a group shown by the following formula (2),
—R 3 —C≡C—R 4   (2)

wherein R 3 represents a single bond or a divalent organic group having 1 to 20 carbon atoms; R 4 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and a dotted line represents a bonding arm.

2. The composition for forming an organic film according to claim 1 , wherein the component (A) has a weight average molecular weight of 500 to 20,000.

3. The composition for forming an organic film according to claim 1 , further comprising at least one of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, and (F) a plasticizer.

4. The composition for forming an organic film according to claim 2 , further comprising at least one of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, and (F) a plasticizer.

5. A substrate for manufacturing a semiconductor apparatus, comprising an organic film on the substrate, the organic film being formed by curing the composition for forming an organic film according to claim 1 .

6. A method for forming an organic film employed in a semiconductor apparatus manufacturing process, the method comprising:
spin-coating a body to be processed with the composition for forming an organic film according to claim 1 ; and
heating the body to be processed coated with the composition for forming an organic film under an inert gas atmosphere at a temperature of 50° C. or higher to 600° C. or lower within a range of 5 seconds to 7200 seconds to obtain a cured film.

7. A method for forming an organic film employed in a semiconductor apparatus manufacturing process, the method comprising:
spin-coating a body to be processed with the composition for forming an organic film according to claim 1 ;
heating the body to be processed coated with the composition for forming an organic film in air at a temperature of 50° C. or higher to 300° C. or lower within a range of 5 seconds to 600 seconds to form a coating film; and
then heating the body to be processed having the formed coating film under an inert gas atmosphere at a temperature of 200° C. or higher to 600° C. or lower within a range of 10 seconds to 7200 seconds to obtain a cured film.

8. The method for forming an organic film according to claim 6 , wherein the inert gas has an oxygen concentration of 1% or less.

9. The method for forming an organic film according to claim 6 , wherein the body to be processed has a structure or a step with a height of 30 nm or more.

10. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film composition;
forming a resist upper layer film on the silicon-containing resist middle layer film from a resist upper layer film composition composed of a photoresist composition;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; and
further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

11. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film composition;
forming an organic antireflective film on the silicon-containing resist middle layer film;
forming a resist upper layer film on the organic antireflective film from a resist upper layer film composition composed of a photoresist composition, so that a 4-layered film structure is constructed;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the organic antireflective film and the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; and
further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

12. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a titanium oxide film, and a titanium nitride film on the organic film;
forming a resist upper layer film on the inorganic hard mask from a resist upper layer film composition composed of a photoresist composition;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the inorganic hard mask by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the inorganic hard mask having the formed pattern as a mask; and
further transferring the pattern to the body to be processed by etching using the organic film having the formed pattern as a mask.

13. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a titanium oxide film, and a titanium nitride film on the organic film;
forming an organic antireflective film on the inorganic hard mask;
forming a resist upper layer film on the organic antireflective film from a resist upper layer film composition composed of a photoresist composition, so that a 4-layered film structure is constructed;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the organic antireflective film and the inorganic hard mask by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the inorganic hard mask having the formed pattern as a mask; and
further transferring the pattern to the body to be processed by etching using the organic film having the formed pattern as a mask.

14. The patterning process according to claim 12 , wherein the inorganic hard m

Assignees

• Shinetsu Chemical Co

Inventors

• Kori Daisuke
• Ogihara Tsutomu
• Watanabe Takeru
• Niida Keisuke
• Sawamura Takashi

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title