Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

Patent metadata

Field	Value
Publication number	US-10995238-B2
Application number	US-201816026175-A
Country	US
Kind code	B2
Filing date	Jul 3, 2018
Priority date	Jul 3, 2018
Publication date	May 4, 2021
Grant date	May 4, 2021

Abstract

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

First claim

What is claimed is:

1. A method of chemical mechanical polishing tungsten, comprising:
providing a substrate comprising tungsten and a dielectric;
providing a chemical mechanical polishing composition, comprising, as initial components:
water;
an oxidizing agent selected from the group consisting of iodate compounds, periodate compounds and mixtures thereof;
colloidal silica abrasive particles comprising a nitrogen-containing compound;
optionally, a pH adjusting agent; and
optionally, a biocide; and wherein a pH of the chemical mechanical polishing composition is equal to or greater than 7;
providing a chemical mechanical polishing pad, having a polishing surface;
creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and
dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate to remove at least some of the tungsten, wherein the chemical mechanical polishing composition has a tungsten removal rate of ≥500 Å/min with a platen speed of 93-113 revolutions per minute, a carrier speed of 87-111 revolutions per minute, a chemical mechanical polishing composition flow rate of 125-300 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

2. The method of chemical mechanical polishing tungsten of claim 1 , wherein the iodate compounds are selected from the group consisting of alkali metal iodates, calcium diiodate, magnesium diiodate, ammonium iodate and mixtures thereof.

3. The method of chemical mechanical polishing tungsten of claim 1 , wherein the periodate compounds are selected from the group consisting of alkali metal periodates, calcium diperiodate, magnesium diperiodate, ammonium periodate and mixtures thereof.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Rohm And Haas Electronic Mat Cmp Holdings

Inventors

• Guo Yi
• Tran Tony Quan

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• C23F1/44

  Compositions for etching metallic material from a metallic material substrate of different composition · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title