Deposition mask, method of manufacturing deposition mask device, and method of manufacturing deposition mask

US10991883B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10991883-B2
Application numberUS-201716096480-A
CountryUS
Kind codeB2
Filing dateDec 26, 2017
Priority dateJan 10, 2017
Publication dateApr 27, 2021
Grant dateApr 27, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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A deposition mask has a central axis extending in a first direction, arranged at a central position in a second direction orthogonal to the first direction. Spaced apart point P 1 and Q 1 are provided on one side of the central axis, and spaced apart points Q 1 and Q 2 are provided on another side of the central axis. When a dimension from point P 1 to point Q 1 is X 1 , a dimension from point P 2 to a point Q 2 is X 2 , and a design value is α x , the deposition mask satisfies the following.  α X - X ⁢ ⁢ 1 + X ⁢ ⁢ 2 2  ≤ 40 ⁢ ⁢ µm ⁢ ⁢ and [ Formula ⁢ ⁢ 1 ]  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ 60 ⁢ ⁢ µm [ Formula ⁢ ⁢ 2 ]

First claim

Opening claim text (preview).

The invention claimed is: 1. A deposition mask extending in a first direction, the deposition mask comprising: a central axis line extending in the first direction and arranged at a central position in a second direction orthogonal to the first direction; a point P 1 and a point Q 1 provided on one side of the central axis line and spaced apart from each other along the first direction; a point P 2 and a point Q 2 provided on the other side of the central axis line and spaced apart from each other along the first direction, wherein the point P 1 and the point P 2 are arranged to be symmetric with each other with respect to the central axis line during deposition, and the point Q 1 and the point Q 2 are arranged to be symmetric with each other with respect to the central axis line during deposition, and when a dimension from the point P 1 to the point Q 1 is X 1 , a dimension from the point P 2 to the point Q 2 is X 2 , and a design value is α x , the deposition mask satisfies the following,  α X - X ⁢ ⁢ 1 + X ⁢ ⁢ 2 2  ≤ 40 ⁢ ⁢ µm [ Formula ⁢ ⁢ 1 ]  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ 60 ⁢ ⁢ µm [ Formula ⁢ ⁢ 2 ] wherein the deposition mask comprises: a first ear portion and a second ear portion that form a pair of end portions in the first direction; through-holes provided between the first ear portion and the second ear portion; and a first edge and a second side edge that form a pair of side edges in a second direction perpendicular to the first direction, wherein the point P 1 and the point P 2 are formed on a side closest to the first ear portion and are positioned at center points of corresponding through-holes, the point Q 1 and the points Q 2 are formed on a side closest to the second ear portion and are positioned at center points of corresponding through-holes, the through-holes corresponding to the point P 1 and the point Q 1 are formed on a side closest to the first side edge, and the through-holes corresponding to the point P 2 and point Q 2 are formed on a side closest to the second side edge. 2. The deposition mask according to claim 1 , wherein a plurality of effective regions in which the through-holes are formed is provided between the first ear portion and the second ear portion, the plurality of effective regions includes a first effective region and a second effective region arranged along the first direction of the deposition mask, the first effective region is arranged on the side of the first ear portion, the second effective region is arranged on the side of the second ear portion, the point P 1 and the point P 2 are positioned at the center points of the corresponding through-holes formed in the first effective region, the point Q 1 and the point Q 2 are positioned at the center points of the corresponding through-holes formed in the second effective region, the first effective region is arranged on a side closest to the first ear portion among the plurality of effective regions, and the second effective region is arranged on a side closest to the second ear portion among the plurality of effective regions. 3. A method of manufacturing a deposition mask device comprising: preparing the deposition mask according to claim 1 ; and applying a tension in the first direction to the deposition mask so that the deposition mask is stretched to be installed to a frame.

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What does patent US10991883B2 cover?
A deposition mask has a central axis extending in a first direction, arranged at a central position in a second direction orthogonal to the first direction. Spaced apart point P 1 and Q 1 are provided on one side of the central axis, and spaced apart points Q 1 and Q 2 are provided on another side of the central axis. When a dimension from point P 1 to point Q 1 is X 1 , a dimension from …
Who is the assignee on this patent?
Dainippon Printing Co Ltd
What technology area does this patent fall under?
Primary CPC classification C23F1/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 27 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).