Wavelength converter

Patent metadata

Field	Value
Publication number	US-10989985-B2
Application number	US-202016831532-A
Country	US
Kind code	B2
Filing date	Mar 26, 2020
Priority date	Jun 7, 2019
Publication date	Apr 27, 2021
Grant date	Apr 27, 2021

Abstract

Provided herein is a wavelength converter capable of producing shorter wavelengths by wavelength conversion than in related art. A wavelength converter of the present disclosure includes: a first layer formed of a single crystal represented by general formula RAMO 4 ; and a second layer formed of a single crystal represented by the general formula RAMO 4 and having a direction of polarization reversed 180° from a direction of polarization of the first layer, wherein, in the general formula, R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd.

First claim

What is claimed is:

1. A wavelength converter comprising:
a first layer formed of a single crystal represented by general formula RAMO 4 ; and
a second layer formed of a single crystal represented by the general formula RAMO 4 and having a direction of polarization reversed 180° from a direction of polarization of the first layer,
wherein, in the general formula, R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd.

2. The wavelength converter according to claim 1 , wherein the first layer and the second layer have an interface formed of an oxide containing A and M.

3. The wavelength converter according to claim 2 , wherein, in the general formula, R is Sc, A is Al, M is Mg, and the interface is an oxide of Al and Mg.

4. The wavelength converter according to claim 1 , comprising a wavelength conversion unit having a periodic polarization-reversed structure in which the first layer and the second layer are laminated in turn in a repeated fashion.

5. The wavelength converter according to claim 4 , wherein the wavelength conversion unit generates a second harmonic.

6. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 3.5 μm or more and 4.4 μm or less, and the second harmonic has a wavelength of 245 nm or more and 280 nm or less.

7. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 4.4 μm or more and 5.5 μm or less, and the second harmonic has a wavelength of 280 nm or more and 315 nm or less.

8. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 5.5 μm or more and 9.8 μm or less, and the second harmonic has a wavelength of 315 nm or more and 400 nm or less.

9. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 9.8 μm or more and 12.4 μm or less, and the second harmonic has a wavelength of 400 nm or more and 435 nm or less.

10. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 12.4 μm or more and 17.1 μm or less, and the second harmonic has a wavelength of 435 nm or more and 480 nm or less.

11. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 17.1 μm or more and 18.1 μm or less, and the second harmonic has a wavelength of 480 nm or more and 490 nm or less.

12. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 18.1 μm or more and 19.2 μm or less, and the second harmonic has a wavelength of 490 nm or more and 500 nm or less.

13. The wavelength converter according to claim 5 , wherein a combined thickness of one of the first layers and one of the second layers is 19.2 μm or more and 26.7 μm or less, and the second harmonic has a wavelength of 500 nm or more and 560 nm or less.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Miyano Kentaro
• Ryoki Naoya
• Ishibashi Akihiko
• Nobuoka Masaki

Classifications

• G02F1/3558

  Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM] · CPC title

• G02F1/37 Primary

  for second-harmonic generation {(G02F1/3532 takes precedence)} · CPC title

• G02F1/3548

  Quasi phase matching [QPM], e.g. using a periodic domain inverted structure · CPC title

• G02F1/3553

  having the formula MTiOYO4, where M=K, Rb, TI, NH4 or Cs and Y=P or As, e.g. KTP · CPC title

• G02F1/3544 Primary

  Particular phase matching techniques · CPC title