Group III nitride semiconductor, and method for producing same

Patent metadata

Field	Value
Publication number	US-9899213-B2
Application number	US-201715428657-A
Country	US
Kind code	B2
Filing date	Feb 9, 2017
Priority date	May 20, 2016
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

On an RAMO 4 substrate containing a single crystal represented by the general formula RAMO 4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.

First claim

What is claimed is:

1. A Group III nitride semiconductor comprising:
a RAMO 4 substrate containing a single crystal represented by the general formula RAMO 4 , wherein-R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd;
a layer disposed on the RAMO 4 substrate, the buffer layer containing a nitride of In and a Group III element except for In; and
a Group III nitride crystal disposed on the layer,
wherein a concentration of an element represented by M in the general formula on a surface of the Group III nitride crystal is smaller than a concentration of the element represented by M in a region of the Group III nitride crystal on a side of the layer.

2. The Group III nitride semiconductor according to claim 1 , wherein the layer contains In in an amount of 0.5% by atom or more and 50% by atom or less.

3. The Group III nitride semiconductor according to claim 1 , wherein in the general formula, R is Sc, A is Al, and M is Mg.

4. The Group III nitride semiconductor according to claim 1 , wherein the layer further contains Al.

5. The Group III nitride semiconductor according to claim 1 , wherein the Group III nitride crystal is GaN.

6. The Group III nitride semiconductor according to claim 1 , wherein the layer has a thickness of 5 nm or more and 1,000 nm or less.

7. The Group III nitride semiconductor according to claim 1 , wherein
the concentration of the element represented by M in the region of the Group III nitride crystal on the side of the layer is more than 10 times as much as the concentration of the element represented by M on the surface of the Group III nitride crystal.

8. A method for producing a Group III nitride semiconductor, comprising:
preparing an RAMO 4 substrate containing a single crystal represented by the general formula RAMO 4 , wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd;
forming a layer containing a nitride of In and a Group III element except for In, on the RAMO 4 substrate; and
forming a Group III nitride crystal on the layer,
wherein a concentration of an element represented by M in the general formula on a surface of the Group III nitride crystal is smaller than a concentration of the element represented by M in a region of the Group III nitride crystal on a side of the layer.

9. The method for producing a Group III nitride semiconductor according to claim 8 , wherein the layer contains In in an amount of 0.5% by atom or more and 50% by atom or less.

10. The method for producing a Group III nitride semiconductor according to claim 8 , wherein the layer further contains Al.

11. The method for producing a Group III nitride semiconductor according to claim 8 , wherein in the general formula, R is Sc, A is Al, and M is Mg.

12. The method for producing a Group III nitride semiconductor according to claim 8 , wherein the Group III nitride crystal is GaN.

Assignees

• Panasonic Corp

Inventors

• Ueta Akio
• Ishibashi Akihiko

Classifications

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P70/12

  by dry cleaning only (H10P70/52 takes precedence) · CPC title

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title