Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches

Patent metadata

Field	Value
Publication number	US-10978639-B2
Application number	US-201816228061-A
Country	US
Kind code	B2
Filing date	Dec 20, 2018
Priority date	Aug 14, 2018
Publication date	Apr 13, 2021
Grant date	Apr 13, 2021

Abstract

A circuit according to the present application includes a diode or other non-linear device coupled to a heating element of a phase-change material (PCM) radio frequency (RF) switch. The diode or other non-linear device allows an amorphizing pulse or a crystallizing pulse to pass to a first terminal of the heating element. The diode or other non-linear device substantially prevents a pulse generator providing the amorphizing pulse or crystallizing pulse from interfering with RF signals at RF terminals of the PCM RF switch. In an array of PCM cells each including a diode or other non-linear device, the diode or other non-linear device substantially prevents sneak paths that would otherwise enable an amorphizing or crystallizing pulse intended for a heating element of a selected cell of the array to be provided to heating elements of unselected cells of the array.

First claim

The invention claimed is:

1. A circuit comprising:
a diode coupled to a heating element of a phase-change material (PCM) radio frequency (RF) switch;
said diode configured to allow an amorphizing pulse or a crystalizing pulse to pass to a first terminal of said heating element;
said diode configured to substantially prevent a pulse generator configured to provide said amorphizing pulse or said crystalizing pulse from interfering with RF signals at RF terminals of said PCM RF switch.

2. The circuit of claim 1 , wherein an anode of said diode is coupled to said pulse generator, and a cathode of said diode is coupled to said first terminal of said heating element.

3. The circuit of claim 1 , wherein said pulse generator presents a variable impedance to said RF terminals.

4. The circuit of claim 1 , wherein a second terminal of said heating element is coupled to ground.

5. The circuit of claim 1 , wherein said PCM RF switch comprises a PCM overlying and transverse to said heating element.

6. The circuit of claim 5 , wherein said RF terminals are coupled to PCM contacts that are electrically connected to opposing sides of said PCM.

7. The circuit of claim 1 , wherein said PCM RF switch comprises a plurality of parasitic capacitors coupling said RF terminals to said first terminal of said heating element.

8. The circuit of claim 7 , wherein said diode is configured to substantially prevent RF current from said RF terminals to flow through said plurality of parasitic capacitors to said pulse generator.

9. A circuit comprising:
a non-linear device coupled to a heating element of a phase-change material (PCM) radio frequency (RF) switch;
said non-linear device configured to allow an amorphizing pulse or a crystalizing pulse to pass to a first terminal of said heating element of said PCM RF switch;
said non-linear device configured to substantially prevent a pulse generator providing said amorphizing pulse or said crystalizing pulse from interfering with RF signals at RF terminals of said PCM RF switch.

10. The circuit of claim 9 , wherein said non-linear device is configured to pass current from said pulse generator to said first terminal of said heating element, while substantially preventing RF current to flow from said RF terminals to said pulse generator.

11. The circuit of claim 10 , wherein said non-linear device is selected from the group consisting of a diode, a diode-configured transistor, an ovonic threshold switching device, and a resistive memory element.

12. The circuit of claim 9 , wherein said PCM RF switch comprises a plurality of parasitic capacitors coupling said RF terminals to said first terminal of said heating element.

13. An array comprising a plurality of columns and a plurality of rows of cells, said array comprising:
each of said cells including a phase-change material (PCM) configured to be programmed by an amorphizing pulse or a crystallizing pulse, each of said cells further including a corresponding heating element and a corresponding diode;
each of said cells configured to be selectively coupled to said amorphizing pulse or said crystallizing pulse at a selected row, wherein said corresponding diode allows said amorphizing pulse or said crystallizing pulse to pass to a first terminal of said corresponding heating element;
each of said cells configured to be selectively coupled to ground at a selected column, wherein said ground is provided to a second terminal of said corresponding heating element;
each of said cells being configured to be a selected cell when having both said selected row and said selected column;
said corresponding diode in each of said cells being configured to substantially prevent a sneak path for said amorphizing pulse or said crystallizing pulse from being provided to an unselected cell in said array.

14. The array of claim 13 , wherein a cathode of said corresponding diode is coupled to said first terminal of said corresponding heating element.

15. The array of claim 13 , wherein said PCM overlies and is transverse to said corresponding heating element.

16. The array of claim 13 , wherein radio frequency (RF) terminals are coupled to PCM contacts that are electrically connected to opposing sides of said PCM.

17. The array of claim 13 , wherein radio frequency (RF) terminals are coupled to PCM contacts that are electrically connected to opposing sides of said PCM.

18. An array comprising a plurality of columns and a plurality of rows of cells, said array comprising:
each of said cells including a phase-change material (PCM) configured to be programmed by an amorphizing pulse or a crystallizing pulse, each of said cells further including a corresponding heating element and a corresponding non-linear device;
each of said cells configured to be selectively coupled to said amorphizing pulse or said crystallizing pulse at a selected row, wherein said corresponding non-linear device allows said amorphizing pulse or said crystallizing pulse to pass to a first terminal of said corresponding heating element;
each of said cells configured to be selectively coupled to ground at a selected column, wherein said ground is provided to a second terminal of said corresponding heating element;
each of said cells being configured to be a selected cell when having both said selected row and said selected column;
said corresponding non-linear device in each of said cells being configured to substantially prevent a sneak path for said amorphizing pulse or said crystallizing pulse from being provided to an unselected cell in said array.

19. The array of claim 18 , wherein said corresponding non-linear device is selected from the group consisting of a diode, a diode-configured transistor, an ovonic threshold switching device, and a resistive memory element.

20. The array of claim 18 , wherein said PCM overlies and is transverse to said corresponding heating element.

Assignees

• Newport Fab Llc

Inventors

• El-Hinnawy Nabil
• Rose Jefferson E
• Howard David J
• Slovin Gregory P

Classifications

• G11C2213/76

  Array using an access device for each cell which being not a transistor and not a diode · CPC title

• G11C2013/008

  Write by generating heat in the surroundings of the memory material, e.g. thermowrite · CPC title

• G11C13/0004 Primary

  comprising amorphous/crystalline phase transition cells · CPC title

• G11C2013/0092

  Write characterized by the shape, e.g. form, length, amplitude of the write pulse · CPC title

• G11C13/0069

  Writing or programming circuits or methods · CPC title