Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US-2018348627-A1 · Dec 6, 2018 · US
US10969677B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10969677-B2 |
| Application number | US-201715776042-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2017 |
| Priority date | Jan 27, 2016 |
| Publication date | Apr 6, 2021 |
| Grant date | Apr 6, 2021 |
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The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.
Opening claim text (preview).
The invention claimed is: 1. A film mask comprising: a transparent, flexible, plastic substrate; an attachment layer comprising an acrylic, epoxy-based or urethane-based material on the substrate; a patterned metal layer provided on at least one portion of a surface of the attachment layer; a darkened light-shielding pattern layer provided: (a) on the metal layer; or (b) on a portion of a surface of the attachment layer; or (c) both (a) and (b), and at least one portion of the surface of the attachment layer contains no metal layer and no darkened light-shielding pattern layer; a surface protective layer provided on the darkened light-shielding pattern layer and on the portion of the surface of the transparent layer where no darkened light-shielding pattern layer is present; and a release force enhancement layer provided on the surface protective layer and having surface energy of 30 dynes/cm or less, wherein the darkened light-shielding pattern layer is composed of AlOxNy (0<x≤1.5, 0<y≤1, and x and y are a ratio of O atoms and N atoms to one Al atom, respectively), and wherein the metal layer is composed of Al. 2. The film mask of claim 1 , wherein the darkened light-shielding pattern layer has a reflectance of about 30% or less in a UV region range. 3. A method for manufacturing the film mask according to claim 1 , the method comprising: forming the darkened light-shielding pattern layer on a transparent substrate; and forming the release force enhancement layer on the darkened light-shielding pattern layer. 4. A method for forming a pattern, comprising: applying a photosensitive resin composition onto a substrate; exposing the applied photosensitive resin composition to light through the film mask according to claim 1 ; and developing the photosensitive resin composition.
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