Memory cells with capacitive logic based on electromechanically controlled variable-capacitance capacitors

Patent metadata

Field	Value
Publication number	US-10964373-B2
Application number	US-201916567927-A
Country	US
Kind code	B2
Filing date	Sep 11, 2019
Priority date	Sep 11, 2018
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A memory cell in capacitive logic, including a bistable system including a fixed element and a mobile element capable of taking one or the other of two stable positions with respect to the fixed element; a read device including a variable-capacitance capacitor including a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and an electrically controllable write device for placing the mobile element in one or the other of its two stable positions.

First claim

The invention claimed is:

1. A memory cell in capacitive logic, comprising:
a bistable system comprising a fixed element and a mobile element having two stable positions with respect to the fixed element;
read device comprising a variable-capacitance capacitor comprising a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and
an electrically controllable write device for placing the mobile element in one or the other of its two stable positions,
wherein the bistable system is:
a) an electrostatic system comprising:
a fixed electrode and a mobile electrode, the fixed electrode comprising two conductive parts electrically connected to each other and disposed on either side of the mobile electrode;
a return spring for returning the mobile electrode to a rest position; and
a voltage application circuit for applying a direct bias voltage between the fixed electrode and the mobile electrode,

or
b) an electrodynamic system comprising:
a fixed conductive coil and a mobile element made of a ferromagnetic material disposed inside the coil;
a return spring for returning the mobile element made of a ferromagnetic material to a rest position; and
a current application circuit for applying a direct bias current between first and second ends of the coil;
wherein the bistable system is a system according to the alternative b).

2. The cell according to claim 1 , wherein the write device is an electrostatic device comprising a third fixed electrode, a fourth fixed electrode, and a fifth mobile electrode rigidly fixed to the mobile element, the fifth electrode being disposed between the third and fourth electrodes.

3. The cell according to claim 2 , wherein the third, fourth and fifth electrodes have the form of inter-engaged combs.

4. The cell according to claim 2 , wherein the third, fourth and fifth electrodes have the form of flat plates that are parallel to one another.

5. The cell according to claim 1 , wherein the first and second electrodes have the form of inter-engaged combs.

6. The cell according to claim 1 , wherein the first and second electrodes have the form of flat plates that are parallel to each another.

7. A memory cell in capacitive logic, comprising:
a bistable system comprising a fixed element and a mobile element having two stable positions with respect to the fixed element;
read device comprising a variable-capacitance capacitor comprising a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and
an electrically controllable write device for placing the mobile element in one or the other of its two stable positions,
wherein the bistable system is:
a) an electrostatic system comprising:
a fixed electrode and a mobile electrode, the fixed electrode comprising two conductive parts electrically connected to each other and disposed on either side of the mobile electrode;
a return spring for returning the mobile electrode to a rest position; and
a voltage application circuit for applying a direct bias voltage between the fixed electrode and the mobile electrode,

or
b) an electrodynamic system comprising:
a fixed conductive coil and a mobile element made of a ferromagnetic material disposed inside the coil;
a return spring for returning the mobile element made of a ferromagnetic material to a rest position; and
a current application circuit for applying a direct bias current between first and second ends of the coil;

wherein the bistable system is a system in accordance with the alternative a);
wherein the fixed electrode and the mobile electrode of the bistable system have the form of inter-engaged combs.

8. A memory cell in capacitive logic, comprising:
a bistable system comprising a fixed element and a mobile element having two stable positions with respect to the fixed element;
read device comprising a variable-capacitance capacitor comprising a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and
an electrically controllable write device for placing the mobile element in one or the other of its two stable positions,
wherein the bistable system is:
a) an electrostatic system comprising:
a fixed electrode and a mobile electrode, the fixed electrode comprising two conductive parts electrically connected to each other and disposed on either side of the mobile electrode;
a return spring for returning the mobile electrode to a rest position; and
a voltage application circuit for applying a direct bias voltage between the fixed electrode and the mobile electrode,

or
b) an electrodynamic system comprising:
a fixed conductive coil and a mobile element made of a ferromagnetic material disposed inside the coil;
a return spring for returning the mobile element made of a ferromagnetic material to a rest position; and

a current application circuit for applying a direct bias current between first and second ends of the coil;
wherein the bistable system is a system in accordance with the alternative a);
wherein the fixed electrode and the mobile electrode of the bistable system have the form of flat conductive plates that are parallel to each other.

9. A memory cell in capacitive logic, comprising:
a bistable system comprising a fixed element and a mobile element having two stable positions with respect to the fixed element;
a read device comprising a variable-capacitance capacitor comprising a first fixed electrode and a second mobile electrode joined mechanically to the mobile element; and
an electrically controllable write device for placing the mobile element in one or the other of its two stable positions,
wherein the bistable system is a mechanical system, comprising a curved flexure beam coupled by its ends to a fixed frame, the ends of the beam being coupled to the fixed frame by way of springs, the bistable system further comprising an electrostatic actuating device to actuate the springs so as to move the ends of the beam further apart from each other or closer together.

Assignees

• Commissariat Energie Atomique

Inventors

• Perrin Yann
• Fanet Hervé
• Galisultanov Ayrat
• Pillonnet Gaël

Classifications

• H01G5/40

  Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations · CPC title

• G11C23/00 Primary

  Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor · CPC title

• H01P7/082

  Microstripline resonators (H01P7/088 takes precedence) · CPC title

• G11C11/24

  using capacitors (G11C11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C11/34, e.g. G11C11/40) · CPC title

• G11C11/23 Primary

  using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes {or William tubes}(G11C11/22 takes precedence) · CPC title