Plasma processing apparatus having injection ports at both sides of the ground electrode for batch processing of substrates

Patent metadata

Field	Value
Publication number	US-10961626-B2
Application number	US-201816025970-A
Country	US
Kind code	B2
Filing date	Jul 2, 2018
Priority date	Sep 20, 2017
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.

First claim

What is claimed is:

1. A substrate processing apparatus comprising: a first tube configured to provide a processing space in which a plurality of substrates are processed;
a substrate support part configured to load the plurality of substrates in a first direction in the processing space;
a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed;
an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and
a plasma reaction part provided outside the first tube, and configured to decompose, with a plasma, the process gas supplied from the gas supply part and provide a decomposed process gas into the processing space, wherein the plasma reaction part comprises:
a plurality of power supply electrode parts extending in the first direction; and a ground electrode part provided between the plurality of power supply electrode parts and extending in the first direction,
wherein the first tube comprises a plurality of injection ports to inject the decomposed process gas from the plasma reaction part into the processing space, the plurality of injection ports being disposed along the first direction, symmetrically at both sides of the ground electrode part in a circumferential direction of a central axis of the first tube, and
wherein the plurality of gas supply parts are at least partially disposed such that the respective supply ports are provided symmetrically at both sides of the ground electrode part in a circumferential direction from the central axis of the first tube.

2. The substrate processing apparatus of claim 1 , further comprising a second tube configured to be spaced apart from the first tube and surround the outside of the first tube such that a separation space is formed between the second tube and the first tube, wherein
the plasma reaction part is provided in the separation space.

3. The substrate processing apparatus of claim 1 , wherein the plasma reaction part accommodates the plurality of power supply electrode parts and the ground electrode part and further comprises a barrier rib configured to define an inner space in which the plasma is formed.

4. The substrate processing apparatus of claim 1 , further comprising a variable power supply part configured to control a size or ratio of a RF power applied to each of the plurality of power supply electrode parts to thereby supply the RF power.

5. The substrate processing apparatus of claim 4 , wherein the variable power supply part comprises:
a power supply part configured to supply the RF power to the plurality of power supply electrode parts; and
a plurality of variable capacitors respectively provided between the power supply part and the plurality of power supply electrode parts.

6. The substrate processing apparatus of claim 4 , wherein the variable power supply parts further comprise probing rods which are respectively provided in the spaces between the plurality of power supply electrode parts and the ground electrode part and configured to measure discharge characteristic values of the plasma, wherein
the size and ratio of the RF power is adjusted according to the discharge characteristic values measured from the probing rods.

7. The substrate processing apparatus of claim 1 , further comprising a ceramic tube configured to surround outer peripheral surfaces of the plurality of power supply electrode parts and the ground electrode part.

8. The substrate processing apparatus of claim 1 , wherein
the plurality of power supply electrode parts and the ground electrode part are disposed to be spaced apart from each other in a peripheral direction of the first tube, and
the plurality of gas supply parts extend in the first direction and are respectively provided outside the power supply electrode parts.

9. The substrate processing apparatus of claim 1 , wherein supply ports of the gas supply parts are formed to face a direction opposed to the power supply electrode parts.

10. The substrate processing apparatus of claim 1 , wherein
the plurality of gas supply parts extend in the first direction and are provided outside a line connecting the power supply electrode parts and the ground electrode part, and
each of the supply ports of the gas supply parts is provided to face the space between the power supply electrode parts and the ground electrode part.

11. The substrate processing apparatus of claim 1 , wherein
the first tube comprises a plurality of injection ports disposed in the first direction corresponding to the power supply electrode parts, and
the injection ports and the supply ports are provided to be misaligned with each other with respect to a radial direction from a central axis of the first tube to the supply ports.

12. The substrate processing apparatus of claim 1 , wherein the gas supply parts comprise:
a reaction gas supply part configured to supply a reaction gas to the plasma reaction part; and
a source gas supply part configured to supply a source gas to the processing space, wherein
the plasma reaction part decomposes the reaction gas with the plasma.

Assignees

• Eugene Technology Co Ltd

Inventors

• Jo Jeong Hee
• Lee Hong Won
• Kang Sung Ho
• Kim Chang Dol
• Choi Gyu Ho

Classifications

• H01J37/3244 Primary

  Gas supply means · CPC title

• C23C16/507

  using external electrodes, e.g. in tunnel type reactors · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title