Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regions
US-9093468-B2 · Jul 28, 2015 · US
US10957563B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10957563-B2 |
| Application number | US-201615380191-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 15, 2016 |
| Priority date | Dec 30, 2015 |
| Publication date | Mar 23, 2021 |
| Grant date | Mar 23, 2021 |
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Systems and methods for reducing contamination on reflective mirrors disposed on chamber walls in a millisecond anneal system are provided. In one example implementation, the reflective mirrors can be heated by one or more of (1) heating the fluid in the closed fluid system for regulating the temperature of the reflective mirrors; (2) electrical cartridge heater(s) or heater ribbon(s) attached to the reflective mirrors; and/or (3) use of lamp light inside the chamber.
Opening claim text (preview).
What is claimed is: 1. A thermal processing system for heating a substrate, comprising: a support plate configured to support the substrate in a processing chamber, the processing chamber comprising a chamber wall, the chamber wall comprising a reflective mirror; a plurality of heat sources configured to heat the substrate; a fluid cooling system configured to flow fluid into the reflective mirror; a heating system configured to heat the fluid flowing into the reflective mirror to reduce contamination evaporating from at least one surface of the substrate on the reflective mirror during a millisecond anneal thermal processing, wherein the heating system comprises one or more control devices configured to adjust a temperature of the fluid flowing into the reflective mirror based at least in part on one or more signals from a temperature sensor configured to measure the temperature of the reflective mirror. 2. The thermal processing system of claim 1 , wherein the heating system is configured to heat the reflective mirror to a temperature of about 100° C. or greater. 3. The thermal processing system of claim 1 , wherein the heating system is capable of heating the reflective mirror to a temperature of about 150° C. 4. The thermal processing system of claim 1 , wherein the heating system comprises a heater configured to heat fluid flowing in a fluid supply line configured to supply fluid to the reflective mirror. 5. The thermal processing system of claim 4 , wherein the heater is configured to heat fluid flowing in a fluid return line configured to receive fluid from the reflective mirror. 6. The thermal processing system of claim 4 , wherein the one or more control devices are configured to control operation of the heater. 7. The thermal processing system of claim 6 , wherein the one or more control devices are configured to control operation of the heater based at least in part on data indicative of fluid temperature. 8. The thermal processing system of claim 6 , wherein the one or more control devices are configured to control operation of the heater based at least in part on data indicative of the temperature of the reflective mirror. 9. The thermal processing system of claim 1 , wherein the one or more control devices are configured to control a flow of fluid through the fluid cooling system based at least in part on the temperature of the reflective mirror. 10. A process for reducing contamination on a reflective mirror disposed on a chamber wall in a thermal processing system that is used to heat a substrate, the process comprising: placing the substrate onto a support plate; heating the substrate; performing a millisecond anneal thermal process; flowing a fluid through a reflective mirror disposed on the chamber wall in the thermal processing system; determining a temperature associated with one or more of the reflective mirror or the fluid; and adjusting one or more characteristics of the fluid flowing through the reflective mirror based at least in part on the temperature to achieve a reflective mirror temperature sufficient to reduce contamination evaporating from at least from at least one surface of the substrate on the reflective mirror during the millisecond anneal thermal process; wherein adjusting one or more characteristics of the fluid flowing through the reflective mirror comprises adjusting a temperature of the fluid flowing through the reflective mirror based at least in part on one or more signals from a temperature sensor configured to measure the temperature of the reflective mirror. 11. The process of claim 10 , wherein adjusting one or more characteristics of the fluid flowing through the reflective mirror comprises heating the fluid flowing through the reflective mirror. 12. The process of claim 10 , wherein the fluid is heated using a heater configured to heat fluid flowing in a fluid supply line configured to supply fluid to the reflective mirror. 13. The process of claim 12 , wherein the heater is configured to heat fluid flowing in a fluid return line configured to receive fluid from the reflective mirror. 14. The process of claim 10 , wherein adjusting one or more characteristics of the fluid flowing through the reflective mirror comprises adjusting a flow of the fluid through the reflective mirror. 15. The process of claim 14 , wherein adjusting the flow of the fluid through the reflective mirror comprises: switching on the flow of fluid when the temperature associated with the reflective mirror is greater than an upper threshold; and switching off the flow of fluid when the temperature associated with the reflective mirror is less than a lower threshold.
characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title
mainly by radiation · CPC title
mainly by convection · CPC title
Temperature monitoring · CPC title
Devices {or methods} for removing incrustations {, e.g. slag, metal deposits, dust; Devices or methods for preventing the adherence of slag} · CPC title
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