Method and apparatus for selective nitridation process

Patent metadata

Field	Value
Publication number	US-10950698-B2
Application number	US-201816102275-A
Country	US
Kind code	B2
Filing date	Aug 13, 2018
Priority date	Aug 10, 2011
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

First claim

The invention claimed is:

1. A method for processing a substrate in a processing region of a process chamber, comprising:
generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe further comprising a mounting sleeve and an inlet member connecting to the mounting sleeve, wherein the mounting sleeve includes a hollow body defining the longitudinally extending sleeve passageway, and the inlet member includes a hollow body defining the longitudinally extending inlet passageway, the mounting sleeve having a first end connecting to a gas outlet of the remote plasma source and a second end connecting to the inlet member so that the longitudinally extending inlet passageway is substantially aligned with the longitudinally extending sleeve passageway, the second end being opposed to the first end, and the longitudinally extending sleeve passageway having a diameter gradually reduced along a longitudinal axis of the mounting sleeve to match a diameter of the longitudinally extending inlet passageway;
flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to a longitudinal axis of the inlet port into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber; and
selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

2. The method of claim 1 , wherein the delivery pipe is disposed between the remote plasma source and the process chamber.

3. The method of claim 1 , wherein the plasma species are flowed at an angle of about 20 degrees to about 45 degrees with respect to the longitudinal axis of the inlet port.

4. The method of claim 1 , wherein the passageway has a length between about 5 inches and about 25 inches.

5. The method of claim 1 , wherein the diameter of the longitudinally extending inlet passageway is in a range between about 0.5 inches and about 2 inches.

6. The method of claim 1 , wherein the plasma species are generated at a pressure of about 0.3 Torr to about 20 Torr and flowed to the delivery pipe at a flow rate between about 1 sLm and about 20 sLm.

7. A method for processing a substrate in a processing region of a process chamber, comprising:
generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe further comprising a mounting sleeve and an inlet member connecting to the mounting sleeve, wherein the mounting sleeve includes a hollow body defining the longitudinally extending sleeve passageway, and the inlet member includes a hollow body defining the longitudinally extending inlet passageway, the mounting sleeve having a first end connecting to a gas outlet of the remote plasma source and a second end connecting to the inlet member so that the longitudinally extending inlet passageway is substantially aligned with the longitudinally extending sleeve passageway, and the mounting sleeve having a diameter gradually reduced along a longitudinal axis of the longitudinally extending sleeve passageway to match a diameter of the longitudinally extending inlet passageway;
flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, the inlet port have an interior surface, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to a longitudinal axis of the inlet port into the inlet port, the plasma species colliding with the interior surface of the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber; and
selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

8. The method of claim 7 , wherein the delivery pipe is disposed between the remote plasma source and the process chamber.

9. The method of claim 7 , wherein the plasma species are flowed at an angle of about 20 degrees to about 45 degrees with respect to the longitudinal axis of the inlet port.

10. The method of claim 7 , wherein the passageway has a length between about 5 inches and about 25 inches.

11. The method of claim 7 , wherein the diameter of the longitudinally extending inlet passageway is in a range between about 0.5 inches and about 2 inches.

12. The method of claim 7 , wherein the diameter of the longitudinally extending inlet passageway is in a range between about 0.65 inches and about 1.5 inches.

13. The method of claim 7 , wherein the plasma species are generated at a pressure of about 0.3 Torr to about 20 Torr and flowed to the delivery pipe at a flow rate between about 1 sLm and about 20 sLm.

14. A method for processing a substrate in a processing region of a process chamber, comprising:
generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe further comprising a mounting sleeve and an inlet member connecting to the mounting sleeve, wherein the mounting sleeve includes a hollow body defining the longitudinally extending sleeve passageway, and the inlet member includes a hollow body defining the longitudinally extending inlet passageway, the mounting sleeve having a first end connecting to a gas outlet of the remote plasma source and a second end connecting to the inlet member so that the longitudinally extending inlet passageway is substantially aligned with the longitudinally extending sleeve passageway, the second end being opposed to the first end, and the longitudinally extending inlet passageway having a diameter gradually reduced along a longitudinal axis of the longitudinally extending inlet passageway;
flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, the inlet port have an interior surface, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to the longitudinal axis of the inlet port into the inlet port, the plasma species colliding with the interior surface of the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber; and
selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

15. The method of claim 14 , wherein the plasma species are flowed at an angle of about 20 degrees to about 45 degrees with respect to the longitudinal axis of the inlet port.

16. The method of claim 14 , wherein the passageway has a length between about 5 inches and about 25 inches.

17. The method of claim 14 , wherein diameter of the longitudinally extending inlet passageway is in a range between about 0.5 inches and about 2 inches.

18. The method of cla

Assignees

• Applied Materials Inc

Inventors

• Rogers Matthew Scott
• Curtis Roger
• Hawrylchak Lara
• Lai Canfeng
• Hwang Bernard L
• Tobin Jeffrey
• Olsen Christopher S
• Bevan Malcolm

Classifications

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P14/6316

  Formation by nitridation, e.g. nitridation of the substrate · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H10D64/035 Primary

  comprising conductor-insulator-conductor-insulator-semiconductor structures · CPC title