Methods for enhancing selectivity in SAM-based selective deposition

Patent metadata

Field	Value
Publication number	US-10950433-B2
Application number	US-201816193594-A
Country	US
Kind code	B2
Filing date	Nov 16, 2018
Priority date	Nov 18, 2017
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

First claim

What is claimed is:

1. A method of selective deposition comprising:
exposing a patterned substrate comprising a first metal surface and a second dielectric surface to a SAM molecule to form a protected second surface and a carbonized layer on the first surface;
exposing the patterned substrate to an oxygenating agent to remove the carbonized layer from the first surface; and
exposing the substrate to a plurality of reactants separately to selectively deposit a film on the first surface over the protected second surface.

2. The method of claim 1 , wherein the first metal surface comprises one or more of ruthenium or cobalt.

3. The method of claim 1 , wherein the patterned substrate is exposed to the SAM molecule by CVD, ALD or immersion.

4. The method of claim 1 , wherein the oxygenating agent consists essentially of oxygen.

5. The method of claim 4 , wherein the oxygenating agent does not comprise a plasma.

6. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs at a temperature in the range of about 100° C. to about 350° C.

7. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs for a period in the range of about 30 seconds to about 10 minutes.

8. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs at a temperature of about 275° C. for a period of about 1 minute.

9. The method of claim 1 , wherein exposing the substrate to an oxygenating agent does not affect the integrity of the protected second surface.

10. The method of claim 1 , wherein the film comprises a dielectric material.

11. A method of selective deposition comprising:
exposing a patterned substrate to a SAM molecule to form a protected second surface and a carbonized layer on the first surface, the patterned substrate comprising a first metal surface comprising ruthenium or cobalt and a second dielectric surface;
exposing the patterned substrate to oxygen gas at a temperature in the range of about 250° C. to about 300° C. for a period in the range of about 30 seconds to about 2 minutes to remove the carbonized layer from the first surface; and
sequentially exposing the substrate to a plurality of reactants to selectively deposit a dielectric material on the first surface over the second surface.

Assignees

• Applied Materials Inc

Inventors

• Ke Chang
• Jackson Michael S
• Wu Liqi
• Zhou Lei
• Zhang Shuyi
• Thompson David
• Ma Paul F
• Liu Biao
• Pan Cheng

Classifications

• H10P14/6348

  Liquid ALD · CPC title

• H10P14/61

  using masks · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6519

  the substance being oxygen · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title