Semiconductor apparatus

US10930736B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10930736-B2
Application numberUS-201816135014-A
CountryUS
Kind codeB2
Filing dateSep 19, 2018
Priority dateFeb 20, 2018
Publication dateFeb 23, 2021
Grant dateFeb 23, 2021

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor apparatus includes: an insulating substrate including an insulating layer having first and second main surfaces, a metal plate on the first main surface, and first to fourth conductors on the second main surface; a semiconductor device including a rear electrode electrically connected to the first conductor and a front electrode electrically connected to the second conductor; a temperature detection device including a first electrode electrically connected to the third conductor and a second electrode electrically connected to the fourth conductor; a first terminal electrically connected to the third conductor; a second terminal positioned so as to be wire-connectable to the fourth conductor; and a third terminal electrically connected to the second conductor, wherein the fourth conductor is positioned so as to be wire-connectable to the second conductor.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor apparatus comprising: an insulating substrate including an insulating layer having a first main surface and a second main surface, a metal plate on the first main surface, and a first conductor, a second conductor, a third conductor and a fourth conductor on the second main surface; a semiconductor device including a rear electrode electrically connected to the first conductor and a front electrode electrically connected to the second conductor; a temperature detection device including a first electrode electrically connected to the third conductor, a second electrode electrically connected to the fourth conductor, and comprising a resistor having temperature dependency, and an active region of the resistor is positioned between the first electrode connected to the third conductor and the second electrode connected to the fourth conductor; a first terminal electrically connected to the third conductor; a second terminal positioned so as to be wire-connectable to the fourth conductor; a third terminal electrically connected to the second conductor; and case resin covering the semiconductor device and the temperature detection device, wherein the fourth conductor is positioned so as to be wire-connectable to the second conductor, and each of the first terminal, the second terminal and the third terminal includes a terminal part projecting from the case resin for electric connection with an outside of the semiconductor apparatus and a wire-bonding part for wiring inside the semiconductor apparatus. 2. The semiconductor apparatus according to claim 1 , wherein the fourth conductor is electrically connected to the second terminal. 3. The semiconductor apparatus according to claim 1 , wherein the fourth conductor is electrically connected to the second conductor. 4. The semiconductor apparatus according to claim 1 , wherein the second terminal and the third terminal are positioned so as to be wire-connectable together. 5. The semiconductor apparatus according to claim 1 , wherein the semiconductor device is made of a wide-band-gap semiconductor, which has a wider band gap than a band gap of silicon. 6. The semiconductor apparatus according to claim 1 , wherein the second electrode outputs a signal including information on a temperature inside the semiconductor apparatus when the second electrode is connected to a temperature measuring instrument.

Assignees

Inventors

Classifications

  • characterised by their shape · CPC title

  • Inductive arrangements (H10W44/20 takes precedence) · CPC title

  • H10W40/255Primary

    having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

  • Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title

  • multiple bond wires connected to common bond pads at both ends of the wires · CPC title

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Frequently asked questions

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What does patent US10930736B2 cover?
A semiconductor apparatus includes: an insulating substrate including an insulating layer having first and second main surfaces, a metal plate on the first main surface, and first to fourth conductors on the second main surface; a semiconductor device including a rear electrode electrically connected to the first conductor and a front electrode electrically connected to the second conductor; a …
Who is the assignee on this patent?
Mitsubishi Electric Corp
What technology area does this patent fall under?
Primary CPC classification H10W40/255. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 23 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).