Drive circuit for semiconductor switching device
US-2024128966-A1 · Apr 18, 2024 · US
Semiconductor device
US2016141284A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016141284-A1 |
| Application number | US-201314897362-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 23, 2013 |
| Priority date | Aug 23, 2013 |
| Publication date | May 19, 2016 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
A transistor ( 2 ) is provided on a semiconductor substrate ( 8 ). A temperature detection diode ( 4 ) for monitoring temperature of an upper surface of the semiconductor substrate ( 8 ) is provided on the semiconductor substrate ( 8 ). An external electrode ( 7 ) is connected in common to an emitter (E) of the transistor ( 2 ) and a cathode (K) of the temperature detection diode ( 4 ). Therefore, an external electrode for the cathode (K) of the temperature detection diode ( 4 ) can be removed, and thus the device can be reduced in size and improved in terms of ease of assembly.
First claim
Opening claim text (preview).
1 . A semiconductor device comprising: a semiconductor substrate; a transistor on the semiconductor substrate; a temperature detection diode on the semiconductor substrate and monitoring temperature of an upper surface of the semiconductor substrate; an external electrode connected in common to an emitter or a source of the transistor and a cathode of the temperature detection diode; and a wire connecting the emitter or the source of the transistor to the cathode of the temperature detection diode. 2 . A semiconductor device comprising: a semiconductor substrate; a transistor on the semiconductor substrate; a temperature detection diode on the semiconductor substrate and monitoring temperature of an upper surface of the semiconductor substrate; an external electrode connected in common to an emitter or a source of the transistor and a cathode of the temperature detection diode; and a plurality of wires connected to the emitter or the source of the transistor, wherein one of the plurality of wires is stitched and connected to the cathode of the temperature detection diode. 3 . A semiconductor device comprising: a semiconductor substrate; a transistor on the semiconductor substrate; a temperature detection diode on the semiconductor substrate and monitoring temperature of an upper surface of the semiconductor substrate; an external electrode connected in common to an emitter or a source of the transistor and a cathode of the temperature detection diode; a relay pad disposed outside the semiconductor substrate; a first wire connected the relay pad to the emitter or the source of the transistor; and a second wire connected the relay pad to the cathode of the temperature detection diode. 4 . A semiconductor device comprising: a semiconductor substrate; a transistor on the semiconductor substrate; a temperature detection diode on the semiconductor substrate and monitoring temperature of an upper surface of the semiconductor substrate; an external electrode connected in common to an emitter or a source of the transistor and a cathode of the temperature detection diode; an electrode plate on the semiconductor substrate and having a back surface joined to the emitter or the source of the transistor; and a wire connected an upper surface of the electrode plate to the cathode of the temperature detection diode. 5 . (canceled)
Assignees
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Classifications
Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title
comprising aluminium [Al] · CPC title
being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title
the connected ends being wedge-shaped · CPC title
the connected ends being ball-shaped · CPC title
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- What does patent US2016141284A1 cover?
- A transistor ( 2 ) is provided on a semiconductor substrate ( 8 ). A temperature detection diode ( 4 ) for monitoring temperature of an upper surface of the semiconductor substrate ( 8 ) is provided on the semiconductor substrate ( 8 ). An external electrode ( 7 ) is connected in common to an emitter (E) of the transistor ( 2 ) and a cathode (K) of the temperature detection diode ( 4 ). Therefo…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H03K17/0828. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).