Plasma processing method

Patent metadata

Field	Value
Publication number	US-10923332-B2
Application number	US-201916391518-A
Country	US
Kind code	B2
Filing date	Apr 23, 2019
Priority date	Apr 23, 2018
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.

First claim

The invention claimed is:

1. A plasma processing method performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus including a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon, the method comprising:
forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position; and
performing plasma processing on the substrate after the formation of the organic film,
wherein in said forming the organic film, a first gas containing a first organic compound and a second gas containing a second organic compound are supplied to the chamber, and
the organic film is formed by polymerization of the first organic compound and the second organic compound.

2. The plasma processing method of claim 1 , wherein said forming the organic film and said performing plasma processing are repeated.

3. The plasma processing method of claim 2 , wherein a heater is provided in the focus ring, and
in said forming the organic film, the focus ring is heated by the heater so that a polymerization occurs selectively on the focus ring.

4. The plasma processing method of claim 1 , wherein a heater is provided in the focus ring, and
in said forming the organic film, the focus ring is heated by the heater so that a polymerization occurs selectively on the focus ring.

5. A plasma processing method performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus including a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon, the method comprising:
forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position; and
performing plasma processing on the substrate after the formation of the organic film,
wherein the plasma processing apparatus further includes a driving mechanism configured to raise the focus ring,
the method further comprising:
when a target correction amount that reflects the difference is greater than or equal to a minimum movement control amount of the focus ring by the driving mechanism, raising the focus ring by using the driving mechanism by a maximum movement amount smaller than or equal to the target correction amount,
wherein in said forming the organic film, the organic film is formed to reduce an amount obtained by subtracting the maximum movement amount from the target correction amount.

6. The plasma processing method of claim 5 , wherein said forming the organic film and said performing plasma processing are repeated.

7. The plasma processing method of claim 6 , wherein in said forming the organic film, a first gas containing a first organic compound and a second gas containing a second organic compound are supplied to the chamber, and
the organic film is formed by polymerization of the first organic compound and the second organic compound.

8. The plasma processing method of claim 7 , wherein a heater is provided in the focus ring, and
in said forming the organic film, the focus ring is heated by the heater so that the polymerization occurs selectively on the focus ring.

9. The plasma processing method of claim 6 , wherein a heater is provided in the focus ring, and
in said forming the organic film, the focus ring is heated by the heater so that a polymerization occurs selectively on the focus ring.

10. The plasma processing method of claim 5 , wherein in said forming the organic film, a first gas containing a first organic compound and a second gas containing a second organic compound are supplied to the chamber, and
the organic film is formed by polymerization of the first organic compound and the second organic compound.

11. The plasma processing method of claim 10 , wherein a heater is provided in the focus ring, and
in said foiling the organic film, the focus ring is heated by the heater so that a polymerization occurs selectively on the focus ring.

12. The plasma processing method of claim 5 , wherein a heater is provided in the focus ring, and
in said forming the organic film, the focus ring is heated by the heater so that a polymerization occurs selectively on the focus ring.

Assignees

• Tokyo Electron Ltd

Inventors

• Asako Ryuichi
• Tabata Masahiro
• Funakubo Takao

Classifications

• C23C16/56

  After-treatment · CPC title

• C23C16/30

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title

• H01J37/32522

  Temperature · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title