Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling

Patent metadata

Field	Value
Publication number	US-10916585-B2
Application number	US-201816188782-A
Country	US
Kind code	B2
Filing date	Nov 13, 2018
Priority date	Aug 14, 2018
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF switches. The stacked PCM RF switches can include a high shunt capacitance PCM RF switch having its heating element contacts near its PCM contacts, and a low shunt capacitance PCM RF switch having its heating element contacts far from its PCM contacts. An RF voltage is substantially uniformly distributed between the high shunt capacitance PCM RF switch and the low shunt capacitance PCM RF switch. The stacked PCM RF switches can also include a wide heating element PCM RF switch having a large PCM active segment, and a narrow heating element PCM RF switch having a small PCM active segment. The wide heating element PCM RF switch will have a higher breakdown voltage than the narrow heating element PCM RF switch.

First claim

The invention claimed is:

1. A radio frequency (RF) switching circuit comprising:
a plurality of stacked phase-change material (PCM) RF switches comprising a high shunt capacitance PCM RF switch and a low shunt capacitance PCM RF switch;
wherein said plurality of stacked PCM RF switches each includes a PCM, said PCM comprising material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and a chalcogenide glass, and having a low-resistivity crystalline phase and a high-resistivity amorphous phase;
said high shunt capacitance PCM RF switch having its heating element contacts near its PCM contacts;
said low shunt capacitance PCM RF switch having its heating element contacts far from its PCM contacts;
said low shunt capacitance PCM RF switch being positioned closer to an RF power source and said high shunt capacitance PCM RF switch being positioned farther from said RF power source such that an RF voltage across said RF switching circuit is uniformly distributed between said high shunt capacitance PCM RF switch and said low shunt capacitance PCM RF switch.

2. The RF switching circuit of claim 1 , wherein said RF power source is an antenna, and said RF switching circuit is situated in an RF receive chain between said antenna and a low noise amplifier (LNA).

3. The RF switching circuit of claim 1 , wherein said RF power source is a power amplifier, and said RF switching circuit is situated in an RF transmit chain between said power amplifier and an antenna.

4. The RF switching circuit of claim 1 , wherein said RF power source is an antenna, and said RF switching circuit is situated in an RF receive chain between said antenna and a filter.

5. The RF switching circuit of claim 1 , wherein said RF power source is a power amplifier, and said RF switching circuit is situated in an RF transmit chain between said power amplifier and a filter.

6. The RF switching circuit of claim 1 , wherein said RF power source is an antenna, and said RF switching circuit is situated in an RF receive chain between said antenna and a mixer.

7. The RF switching circuit of claim 1 , wherein said RF power source is a mixer, and said RF switching circuit is situated in an RF transmit chain between said mixer and an antenna.

8. The RF switching circuit of claim 1 , wherein said high shunt capacitance PCM RF switch and said low shunt capacitance PCM RF switch each includes a heating element transverse to said PCM.

9. The RF switching circuit of claim 1 , wherein said high shunt capacitance PCM RF switch is selected from the group consisting of a wide heating element PCM RF switch and a narrow heating element PCM RF switch.

10. The RF switching circuit of claim 1 , wherein said low shunt capacitance PCM RF switch is selected from the group consisting of a wide heating element PCM RF switch and a narrow heating element PCM RF switch.

11. A radio frequency (RF) switching circuit comprising:
a plurality of stacked phase-change material (PCM) RF switches comprising a wide heating element PCM RF switch and a narrow heating element PCM RF switch;
wherein said plurality of stacked PCM RF switches each includes a PCM, said PCM comprising material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and a chalcogenide glass, and having a low-resistivity crystalline phase and a high-resistivity amorphous phase;
said wide heating element PCM RF switch having a large PCM active segment;
said narrow heating element PCM RF switch having a small PCM active segment;
said wide heating element PCM RF switch having a high breakdown voltage, and said narrow heating element PCM RF switch having a low breakdown voltage, said RF switching circuit distributing a high voltage drop across said wide heating element PCM RF switch and a low voltage drop across said narrow heating element PCM RF switch.

12. The RF switching circuit of claim 11 , wherein said RF switching circuit is situated in an RF receive chain between an antenna and a low noise amplifier (LNA).

13. The RF switching circuit of claim 11 , wherein said RF switching circuit is situated in an RF transmit chain between a power amplifier and an antenna.

14. The RF switching circuit of claim 11 , wherein said wide heating element PCM RF switch and said narrow heating element PCM RF switch each includes a heating element transverse to said PCM.

15. The RF switching circuit of claim 11 , wherein said wide heating element PCM RF switch is selected from the group consisting of a high shunt capacitance PCM RF switch and a low shunt capacitance PCM RF switch.

16. The RF switching circuit of claim 11 , wherein said narrow heating element PCM RF switch is selected from the group consisting of a high shunt capacitance PCM RF switch and a low shunt capacitance PCM RF switch.

17. A method for uniformly distributing radio frequency (RF) voltage across a plurality of stacked phase-change material (PCM) RF switches in an RF switching circuit, wherein said plurality of stacked PCM RF switches each includes a PCM, said PCM comprising material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and a chalcogenide glass, and having a low-resistivity crystalline phase and a high-resistivity amorphous phase, said method comprising:
determining a first proximity of a first PCM RF switch to an RF power source;
determining a second proximity of a second PCM RF switch to said RF power source;
forming first heating element contacts of said first PCM RF switch at a first distance from first PCM contacts of said first PCM RF switch so as to result in a first shunt capacitance corresponding to said first proximity;
forming second heating element contacts of said second PCM RF switch at a second distance from second PCM contacts of said second PCM RF switch so as to result in a second shunt capacitance corresponding to said second proximity.

18. The method of claim 17 , wherein said RF power source is an antenna, and said RF switching circuit is situated in an RF receive chain between said antenna and a low noise amplifier (LNA).

19. The method of claim 17 , wherein said RF power source is a power amplifier, and said RF switching circuit is situated in an RF transmit chain between said power amplifier and an antenna.

20. The method of claim 17 , wherein said first PCM RF switch and said second PCM RF switch each includes a heating element transverse to said PCM.

21. A method for distributing a high voltage drop across a first phase-change material (PCM) radio frequency (RF) switch and a low voltage drop across a second PCM RF switch in a RF switching circuit, wherein said first and second PCM RF switches each includes a PCM, said PCM comprising material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and a chalcogenide glass, and having a low-resistivity crystalline phase and a high-resistivity amorphous phase, the method comprising:
determining a first proximity of said first PCM RF switch to an RF power source;
determining a second proximity of said second PCM RF switch to said RF power source;
forming a first heating element of a first width for said first PCM RF switch so as to result in a first breakdown voltage corres

Assignees

• Newport Fab Llc

Inventors

• El-Hinnawy Nabil
• Hurwitz Paul D
• Slovin Gregory P
• Rose Jefferson E
• Kanawati Roda
• Howard David J

Classifications

• H10B63/10 Primary

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• H01L27/2481 Primary

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic

• H01L45/143

  Electricity · mapped topic

• H01L45/06

  Electricity · mapped topic