Metal complexes as P-type dopants for organic electronic matrix materials
US-9929362-B2 · Mar 27, 2018 · US
US10910571B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10910571-B2 |
| Application number | US-201615774243-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 14, 2016 |
| Priority date | Dec 15, 2015 |
| Publication date | Feb 2, 2021 |
| Grant date | Feb 2, 2021 |
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An organic electronic component is disclosed. In an embodiment an organic electronic component includes at least one organic layer having a fluorinated sulfonimide metal salt of the following formula: wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 39 g/mol, where 1≤n≤7, and wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.
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The invention claimed is: 1. An organic electronic component comprising: at least one organic layer comprising a p-type dopant, wherein the p-type dopant consists of a fluorinated sulfonimide metal salt of the following formula: wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 39 g/mol, wherein M is copper, zinc, aluminum, bismuth, potassium, rubidium, caesium or tin, wherein 1≤n≤7, wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical, wherein the organic layer is hole-transporting and comprises a matrix material, and wherein the p-type dopant acts as an electron acceptor in relation to the matrix material. 2. The organic electronic component according to claim 1 , wherein M=copper and n=2. 3. The organic electronic component according to claim 1 , wherein the matrix material is a hole-transport material. 4. The organic electronic component according to claim 1 , wherein the p-type dopant has a proportion of between 1% by volume and 30% by volume in the matrix material. 5. The organic electronic component according to claim 1 , wherein the matrix material is selected from the group consisting of HTM014, HTM081, HTM163, HTM222, NHT5, NHT49, NHT51, EL-301, EL-22T, HTM226, HTM355, HTM133, HTM334 and HTM604. 6. The organic electronic component according to claim 1 , wherein R 1 , R 2 are selected independently of one another from the group consisting of a linear or branched, at least partially fluorine-substituted alkyl radical having 1 to 10 carbon atoms, an at least partially fluorine-substituted aryl radical having 1 to 20 carbon atoms and an at least partially fluorine-substituted arylalkyl radical having 1 to 20 carbon atoms. 7. The organic electronic component according to claim 1 , wherein R 1 and R 2 are the same substituents and are selected from the following group: 8. The organic electronic component according to claim 1 , wherein the organic electronic component is an organic light-emitting diode. 9. The organic electronic component according to claim 1 , wherein the organic electronic component is a solar cell. 10. The organic electronic component according to claim 1 , wherein the organic layer is produced by co-deposition of the matrix material and the p-type dopant via physical vapour deposition. 11. The organic electronic component according to claim 1 , wherein the organic layer is produced by a wet-chemical method. 12. The organic electronic component according to claim 1 , wherein the organic layer is a charge carrier generation layer. 13. The organic electronic component according to claim 1 , wherein the organic electronic component is a photodetector. 14. The organic electronic component according to claim 1 , wherein the organic electronic component is an organic field-effect transistor. 15. An organic electronic component comprising: at least one organic layer comprising a p-type dopant, wherein the p-type dopant consists of a fluorinated sulfonimide metal salt of the following formula: wherein M=copper and n=2, and wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical. 16. The organic electronic component according to claim 15 , wherein the organic layer is hole-transporting and comprises a matrix material, and wherein the p-type dopant acts as an electron acceptor in relation to the matrix material. 17. The organic electronic component according to claim 16 , wherein the p-type dopant has a proportion of between 1% by volume and 30% by volume in the matrix material. 18. An organic electronic component comprising: at least one organic layer, wherein the organic layer is a hole-injection layer and consists essentially of a fluorinated sulfonimide metal salt of the following formula: wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical, and wherein M=copper and n=2. 19. The organic electronic component according to claim 18 , wherein R 1 , R 2 are selected independently of one another from the group consisting of a linear or branched, at least partially fluorine-substituted alkyl radical having 1 to 10 carbon atoms, an at least partially fluorine-substituted aryl radical having 1 to 20 carbon atoms and an at least partially fluorine-substituted arylalkyl radical having 1 to 20 carbon atoms. 20. The organic electronic component according to claim 18 , wherein the organic electronic component is an organic light-emitting diode.
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