Charge carrier modulation for color and brightness coordination in organic light-emitting diodes

US9627641B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9627641-B2
Application numberUS-201113825891-A
CountryUS
Kind codeB2
Filing dateSep 20, 2011
Priority dateSep 24, 2010
Publication dateApr 18, 2017
Grant dateApr 18, 2017

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  1. Title

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The device for charge carrier modulation is a current-controlled component, which has semiconductor layers arranged on top of each other. The organic semiconductor layers arranged on top of each other are an electron transport layer, which is arranged between a first and a second hole transport layer, and/or a hole transport layer, which is arranged between a first and a second electron transport layer. The respective central layer is the modulation layer having a contact for a modulation voltage. By applying a modulation voltage, a modulation current flow is generated over the modulation layer. The modulation current flow influences the component current flow which flows from the first into the second hole or electron transport layer via the respective modulation layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A current-controlled component comprising: a light emission region including at least one emission layer configured to emit light of at least one color; and at least one of: a hole modulator having a multiple hole transport layer arrangement including a first hole transport layer, a second hole transport layer, an electron transport layer arranged between the first hole transport layer and the second hole transport layer and configured as a first modulation layer, the first modulation layer having a first modulation layer contact for a first modulation voltage, generated by a first modulation voltage source, by which a first modulation current across the first modulation layer is generated, and a first modulation current flow path, including the first modulation voltage source connected to the first modulation layer contact, through the first modulation layer and the first hole transport layer, wherein the light emission region is arranged outside the first modulation current flow path, and wherein the first modulation current controls a component current from the first hole transport layer to the second hole transport layer through the first modulation layer, or an electron modulator having a multiple electron transport layer arrangement including a first electron transport layer, a second electron transport layer, a hole transport layer arranged between the first electron transport layer and the second electron transport layer and configured as a second modulation layer, the second modulation layer having a second modulation layer contact for a second modulation voltage generated by a second modulation voltage source, by which a second modulation current across the second modulation layer is generated, a second modulation current flow path, including the second modulation voltage source connected to the second modulation layer contact, through the second modulation layer and the first electron transport layer, wherein the light emission region is arranged outside the second modulation current flow path, and wherein the second modulation current controls a second component current from the first electron transport layer to the second electron transport layer through the second modulation layer. 2. The current-controlled component as claimed in claim 1 , wherein the organic semiconductor layers lie on one another in a vertical layer stack. 3. The current-controlled component as claimed in claim 1 , further comprising one of: heterojunctions formed between the organic semiconductor layers lying on one another, or intrinsic interlayers arranged between the organic semiconductor layers. 4. The current-controlled component as claimed in claim 1 , wherein the first modulation layer in the multiple hole transport layer arrangement has a thickness which is less than a diffusion length of minority charge carriers in a semiconductor material of the first modulation layer, or the second modulation layer in the multiple electron transport layer arrangement has a thickness which is less than a diffusion length of minority charge carriers in a semiconductor material of the second modulation layer. 5. The current-controlled component as claimed in claim 1 , wherein in the multiple hole transport layer arrangement, the first modulation voltage is applied to the first modulation layer and to the first hole transport layer so that majority charge carriers in a semiconductor material of the first hole transport layer and the second hole transport layer and minority charge carriers in a semiconductor material of the first modulation layer are moved from the first hole transport layer into the first modulation layer, or in the multiple electron transport layer arrangement, the second modulation voltage is applied to the second modulation layer and to the first electron transport layer so that majority charge carriers in a semiconductor material of the first electron transport layer and the second electron transport layer and minority charge carriers in a semiconductor material of the second modulation layer are moved from the first electron transport layer into the second modulation layer. 6. The current-controlled component as claimed in 1 , wherein: in the multiple hole transport layer arrangement, at least the first modulation layer and one of the first and second hole transport layers have a doping concentration of between 0.01 vol % and 10 vol %, or in the multiple electron transport layer arrangement, at least the second modulation layer and one of the first and second electron transport layers have a doping concentration of between 0.01 vol % and 10 vol %. 7. The current-controlled component as claimed in claim 1 , wherein: in the multiple hole transport layer arrangement, the first modulation layer has a doping concentration of between 0.01 vol % and 10 vol %, or in the multiple electron transport layer arrangement, the second modulation layer has a doping concentration of between 0.01 vol % and 10 vol %. 8. An organic light-emitting diode comprising at least one current-controlled component as claimed in claim 1 . 9. The organic light-emitting diode as claimed in claim 8 , comprising an emission zone comprising at least two emission layers which emit light of different colors. 10. An organic light-emitting diode comprising at least one current-controlled component as claimed in claim 1 , wherein in the multiple hole transport layer arrangement, a color rendering of the organic light-emitting diode is varied by application of the first modulation voltage, or in the multiple electron transport layer arrangement, a color rendering of the organic light-emitting diode is varied by application of the second modulation voltage. 11. An organic light-emitting diode comprising a current-controlled component as claimed in claim 1 , wherein: in the multiple hole transport layer arrangement, efficiency is variable by application of the first modulation voltage, or in the multiple electron transport layer arrangement, efficiency is variable by application of the second modulation voltage. 12. An organic light-emitting diode comprising: a multiple hole transport layer arrangement including a first hole transport layer, a second hole transport layer, a first modulation layer arranged between the first hole transport layer and the second hole transport layer and being an electron transport layer, the first modulation layer having a first contact for a first modulation voltage, generated by a first modulation voltage source, by which a first modulation current across the first modulation layer is generated, and a first modulation current flow path, including the first modulation voltage source connected to the first modulation layer contact, through the first modulation layer and the first hole transport layer, and wherein the first modulation current controls a component current from the first hole transport layer to the second hole transport layer through the first modulation layer; a multiple electron transport layer arrangement including a first electron transport layer, a second electron transport layer, and a second modulation layer arranged between the first electron transport layer and the second electron transport layer and being a hole transport layer, the second modulation layer having a second contact for a second modulation voltage, generated by a second modulation voltage source, by which a second modulation current across the second modulation layer is generated, a second modulation current flow path, including the second modulation voltage source connected to the second modulation layer contact, through the second m

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What does patent US9627641B2 cover?
The device for charge carrier modulation is a current-controlled component, which has semiconductor layers arranged on top of each other. The organic semiconductor layers arranged on top of each other are an electron transport layer, which is arranged between a first and a second hole transport layer, and/or a hole transport layer, which is arranged between a first and a second electron transpo…
Who is the assignee on this patent?
Schmid Günter, Taroata Dan, Siemens Ag
What technology area does this patent fall under?
Primary CPC classification H10K50/155. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).