Multicolor approach to DRAM STI active cut patterning

Patent metadata

Field	Value
Publication number	US-10910381-B2
Application number	US-201916527915-A
Country	US
Kind code	B2
Filing date	Jul 31, 2019
Priority date	Aug 1, 2018
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

First claim

What is claimed is:

1. A method of forming an electronic device, the method comprising:
providing a substrate comprising:
a plurality of first lines extending along a first direction, the first lines comprising a first spacer material,
a plurality of second lines comprising a second spacer material extending along the first direction, the second lines arranged on either side of the plurality of first lines and having a trench between adjacent second lines exposing a portion of the substrate,

performing a conformal gapfill process to fill the trench with carbon gapfill material to form a carbon line along the first direction and deposit an overburden carbon material having an opening aligned with the carbon gapfill material in the filled trench;
depositing a spin-on-carbon (SOC) layer on the carbon material to fill the opening in the overburden carbon material and cover the carbon gapfill material in the filled trench and the overburden carbon material; and
removing the SOC layer and the overburden carbon material to expose a top surface of the first spacer material, the second spacer material and the carbon gapfill material.

2. The method of claim 1 , wherein the first spacer material comprises a low temperature oxide.

3. The method of claim 1 , wherein the second spacer material comprises silicon boride.

4. The method of claim 1 , wherein the carbon material comprises a diamond-like carbon.

5. The method of claim 1 , wherein the SOC layer and the overburden carbon material are removed by an etch process having 1:1 selectivity to the SOC layer and the overburden carbon material.

6. The method of claim 1 , further comprising:
depositing an oxide layer on the top surface of the first spacer material, the second spacer material and the carbon gapfill material; and
depositing a plurality of spaced third lines of a third spacer material in a second direction different from the first direction so that the third spacer lines cross the first spacer lines and the carbon line.

7. The method of claim 1 , further comprising forming lines of fourth spacer material on either side of the spaced third material lines leaving a trench between adjacent fourth spacer material lines exposing a top surface of the oxide layer, the trench extending along the second direction.

8. The method of claim 7 , further comprising etching the first spacer material through the trench to expose portions of the substrate.

9. The method of claim 8 , further comprising depositing a spin-on-carbon film on the exposed portions of the substrate to fill the trench.

10. The method of claim 9 , further comprising etching the third spacer material to form trenches extending along the second direction.

11. The method of claim 10 , further comprising etching the oxide layer through the trenches to expose portions of the second spacer material and form trenches in the oxide layer extending along the second direction.

12. The method of claim 11 , further comprising removing the fourth spacer material to expose the oxide layer.

13. The method of claim 12 , further comprising removing the spin-on-carbon film to expose portions of the substrate and form a trench extending along the second direction.

14. The method of claim 13 , further comprising removing the oxide layer and second spacer material to form a patterned substrate having lines of carbon material extending along the first direction with breaks in the lines extending along the second direction and lines of second spacer material extending along the first direction with breaks in the lines extending along the second direction.

15. A method of forming an electronic device, the method comprising:
providing a substrate comprising a plurality of first lines extending along a first direction, a plurality of carbon material lines extending along the first direction, each of the carbon material lines separated from adjacent first lines by a second line, an oxide layer on the first lines, second lines and carbon material lines, and a plurality of third lines on the oxide layer, the third lines extending along a second direction different than the first direction and spaced to form trenches between adjacent third lines;
performing a conformal gapfill process to fill the trench between adjacent third lines with a fourth spacer material;
removing portions of the fourth spacer material to provide a plurality of fourth lines of the fourth spacer material, each of the fourth lines adjacent to a third line so that each third line has a fourth line on either side thereof, and forming an opening exposing the oxide layer; and
performing a first cut etch process to remove the oxide layer and portions of the first lines and carbon material lines under the oxide layer, leaving the second lines.

16. The method of claim 15 , further comprising depositing a spin-on material in the opening to fill spaces created by removal of the portions of the first lines and carbon material lines so that a top surface of the third lines and fourth lines are exposed.

17. The method of claim 16 , further comprising etching the third lines and oxide layer below the third lines to expose a top surface of the first lines, second lines and carbon material lines.

18. The method of claim 17 , further comprising removing the fourth lines and spin-on material.

19. The method of claim 18 , further comprising removing the oxide layer and second lines to provide a substrate with patterned first lines and patterned carbon material lines.

Assignees

• Applied Materials Inc

Inventors

• Singh Tejinder
• Koshizawa Takehito
• Mallick Abhijit Basu
• Manna Pramit
• Fung Nancy
• Venkatasubramanian Eswaranand
• Hwang Ho-Yung David
• Gottheim Samuel E

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6902 Primary

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10B12/01 Primary

  Manufacture or treatment · CPC title

• H01L27/10844 Primary

  Electricity · mapped topic