Methods and system for cleaning semiconductor wafers

Patent metadata

Field	Value
Publication number	US-10910244-B2
Application number	US-201515575793-A
Country	US
Kind code	B2
Filing date	May 20, 2015
Priority date	May 20, 2015
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.

First claim

What is claimed is:

1. A method for cleaning a semiconductor wafer comprising features of patterned structures, the method comprising:
applying liquid on the semiconductor wafer;
computing a predetermined first time period by accessing inputs T i , T 0 , ΔT, δT, and f 1 , where T i is an implosion temperature, T 0 is a temperature of the liquid, ΔT is a temperature increase after one time of compression, δT is a temperature decrease after one time of expansion, and f1 is a first frequency value, and selecting the predetermined first time period to be shorter than ((T i −T 0 −ΔT)/(ΔT−δT)+1)/f 1 ;
controlling, based on a timer, a power supply of a transducer to deliver acoustic energy to the liquid at the first frequency value and a first power level value for the predetermined first time period; and
controlling, based on the timer, the power supply of the transducer to deliver acoustic energy to the liquid at a second frequency value and a second power level value for a predetermined second time period,
wherein the first and second predetermined time periods are alternately applied one after another for a predetermined number of cycles, and
wherein the first and second predetermined time periods, the first and second power level values, and the first and second frequency values are determined such that no feature is damaged as a result of delivering the acoustic energy.

2. The method of claim 1 , wherein bubble implosion does not occur in the predetermined first time period.

3. The method of claim 1 , wherein the predetermined first time period is further determined by:
alternating between delivering acoustic energy to the liquid at the first frequency and the first power level for a test time period, and delivering acoustic energy to the liquid at the second frequency and the second power level for a sufficiently long time period;
measuring a percentage of damaged features;
repeating the above steps with a plurality of different test time periods; and
determining the predetermined first time period as a fraction of a test time period with no damaged features.

4. The method of claim 1 , wherein the predetermined second time period is determined by:
alternating between delivering acoustic energy to the liquid at the first frequency and the first power level for a predetermined time period, and delivering acoustic energy to the liquid at the second frequency and the second power level for a test time period;
measuring a percentage of damaged features;
repeating the above steps with a plurality of different test time periods; and
determining the predetermined second time period as a value no less than a test time period with no damaged features.

5. The method of claim 1 , wherein the second frequency is higher than the first frequency.

6. The method of claim 1 , wherein acoustic energy in the predetermined second time period is in antiphase to acoustic energy in the predetermined first time period.

7. The method of claim 1 , wherein the first frequency is equal to the second frequency, while the first power level is higher than the second power level.

8. The method of claim 1 , wherein the first frequency is higher than the second frequency, while the first power level is higher than the second power level.

9. The method of claim 1 , wherein the first frequency is lower than the second frequency, while the first power level is equal to the second power level.

10. The method of claim 1 , wherein the first frequency is lower than the second frequency, while the first power level is higher than the second power level.

11. The method of claim 1 , wherein the first frequency is lower than the second frequency, while the first power lever is lower than the second power level.

12. The method of claim 1 , wherein the first power level value rises during the predetermined first time period.

13. The method of claim 1 , wherein the first power level value falls during the predetermined first time period.

14. The method of claim 1 , wherein the first power level value both rises and falls during the predetermined first time period.

15. The method of claim 1 , wherein the first frequency value changes from a higher value to a lower value during the predetermined first time period.

16. The method of claim 1 , wherein the first frequency value changes from a lower value to a higher value during the predetermined first time period.

17. The method of claim 1 , wherein the first frequency value changes from a lower value to a higher value and then back to the lower value during the predetermined first time period.

18. The method of claim 1 , wherein the first frequency value changes from a higher value to a lower value and then back to the higher value during the predetermined first time period.

19. The method of claim 1 , wherein the first frequency value is set as f 1 first, f 3 later and f 4 at last during the predetermined first time period, where f 4 is smaller than f 3 , and f 3 is smaller than f 1 .

20. The method of claim 1 , wherein the first frequency value is set as f 4 first, f 3 later and f 1 at last during the predetermined first time period, where f 4 is smaller than f 3 , and f 3 is smaller than f 1 .

21. The method of claim 1 , wherein the first frequency value is set as f 1 first, f 4 later and f 3 at last during the predetermined first time period, where f 4 is smaller than f 3 , and f 3 is smaller than f 1 .

22. The method of claim 1 , wherein the first frequency value is set as f 3 first, f 4 later and f 1 at last during the predetermined first time period, where f 4 is smaller than f 3 , and f 3 is smaller than f 1 .

23. The method of claim 1 , wherein the first frequency value is set as f 3 first, f 1 later and f 4 at last during the predetermined first time period, where f 4 is smaller than f 3 , and f 3 is smaller than f 1 .

24. The method of claim 1 , wherein the first frequency value is set as f 4 first, f 1 later and f 3 at last during the predetermined first time period, where f 4 is smaller than f 3 , and f 3 is smaller than f 1 .

25. The method of claim 1 , wherein the second frequency is zero and the second power level remains a constant positive value during the predetermined second time period.

26. The method of claim 1 , wherein the second frequency is zero and the second power level remains a constant negative value during the predetermined second time period.

27. The method of claim 1 , wherein the features comprise vias or trenches having depth to width ratios of at least 3.

28. The method of claim 1 , wherein a device manufacturing node of the semiconductor wafer is no more than 16 nanometers.

29. The method of claim 1 , further comprising rotating the wafer with respect to the transducer as acoustic energy is delivered.

30. The method of claim 1 , wherein the features are not damaged by expansion of bubbles in the predetermined first time period.

31. The method of claim 1 , wherein the predetermined first time period is shorter than 2,000 times of a cycle period of the first frequency.

32. The method of claim 1 , wherein the second power level is lower than the first power level.

33. The method of claim 32 , wherein the second power level is zero.

34. The method of claim 1 ,

Assignees

• Acm Research Shanghai Inc
• Acm Res Inc

Inventors

• Wang Hui
• Chen Fufa
• Chen Fuping
• Wang Jian
• Wang Xi
• Zhang Xiaoyan
• Jin Yinuo
• Jia Zhaowei
• Xie Liangzhi
• Wang Jun
• Li Xuejun

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0604 Primary

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• B08B3/12

  by sonic or ultrasonic vibrations · CPC title