System and methods for controlling an amount of primer in a primer application gas
US-2024379467-A1 · Nov 14, 2024 · US
US10908503B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10908503-B2 |
| Application number | US-201916565661-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 10, 2019 |
| Priority date | Sep 12, 2018 |
| Publication date | Feb 2, 2021 |
| Grant date | Feb 2, 2021 |
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An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.
Opening claim text (preview).
What is claimed is: 1. An apparatus for treating a substrate, the apparatus comprising: a developing chamber configured to perform a developing process on the substrate by supplying a developing solution; a supercritical chamber configured to treat the substrate by supplying a supercritical fluid; and a transfer chamber having a transfer unit configured to transfer the substrate between the developing chamber and the supercritical chamber, wherein the developing chamber includes a developing nozzle configured to supply the developing solution and a cleaning nozzle configured to supply a cleaning solution, wherein the apparatus further comprises a controller configured to control the transfer unit, and wherein the controller controls the transfer unit to transfer the substrate having the developing solution or the cleaning solution remaining thereon from the developing chamber to the supercritical chamber. 2. The apparatus of claim 1 , wherein the apparatus further comprises a heat treatment chamber configured to perform a heat treatment process on the substrate. 3. An apparatus for treating a substrate, the apparatus comprising: an index module including a carrier in which the substrate is received; a treating module configured to perform a process on the substrate; and an interface module configured to connect the treating module with an external stepper, wherein the index module, the treating module, and the interface module are sequentially arranged in a row, wherein the treating module includes a treating block configured to perform the process on the substrate, and wherein the treating block includes: a developing chamber configured to perform a developing process on the substrate by supplying a developing solution; a coating chamber configured to form a coating film on the substrate by supplying a coating solution; a heat treatment chamber configured to perform a heat treatment process on the substrate; a supercritical chamber configured to treat the substrate by supplying a supercritical fluid; and a transfer chamber having a transfer unit configured to transfer the substrate between the developing chamber, the coating chamber, the heat treatment chamber, and the supercritical chamber, wherein the developing chamber includes a developing nozzle configured to supply the developing solution and a cleaning nozzle configured to supply a cleaning solution, wherein the apparatus further comprises a controller configured to control the transfer unit, and wherein the controller controls the transfer unit to transfer the substrate having the developing solution or the cleaning solution remaining thereon from the developing chamber to the supercritical chamber. 4. The apparatus of claim 3 , wherein the coating chamber and the developing chamber are vertically stacked on each other, and wherein a dimension of the supercritical chamber in a vertical direction is larger than a dimension of the coating chamber or the developing chamber in the vertical direction and is equal to or smaller than the sum of dimensions of the coating chamber and the developing chamber in the vertical direction. 5. The apparatus of claim 4 , wherein the coating chamber and the developing chamber are disposed on one side of the transfer chamber, and wherein the heat treatment chamber is disposed on an opposite side of the transfer chamber. 6. The apparatus of claim 5 , wherein the supercritical chamber is disposed on the one side and the opposite side of the transfer chamber. 7. The apparatus of claim 6 , wherein the treating block includes a plurality of treating blocks vertically stacked one above another. 8. An apparatus for treating a substrate, the apparatus comprising: an index module including a carrier in which the substrate is received; a treating module configured to perform a process on the substrate; an interface module configured to connect the treating module with an external stepper; and a controller configured to control the transfer unit of the second transfer chamber, wherein the controller controls the transfer unit to sequentially transfer the substrate to the developing chamber and the supercritical chamber, wherein the index module, the treating module, and the interface module are sequentially arranged in a row, wherein the treating module includes: a coating block configured to perform a coating process on the substrate; and a developing block configured to perform a developing process on the substrate, wherein the coating block includes: a coating chamber configured to form a coating film on the substrate by supplying a coating solution; a first heat treatment chamber configured to perform a heat treatment process on the substrate; and a first transfer chamber having a transfer unit configured to transfer the substrate between the coating chamber and the first heat treatment chamber; wherein the developing block includes: a developing chamber configured to perform a developing process on the substrate by supplying a developing solution; a second heat treatment chamber configured to perform a heat treatment process on the substrate; a supercritical chamber configured to treat the substrate by supplying a supercritical fluid; and a second transfer chamber having a transfer unit configured to transfer the substrate between the developing chamber, the second heat treatment chamber, and the supercritical chamber; wherein the developing chamber includes a developing nozzle configured to supply the developing solution and a cleaning nozzle configured to supply a cleaning solution, and wherein the controller controls the transfer unit to transfer the substrate having the developing solution or the cleaning solution remaining thereon from the developing chamber to the supercritical chamber. 9. The apparatus of claim 8 , wherein the developing chamber includes a plurality of developing chambers vertically stacked one above another, and wherein a dimension of the supercritical chamber in a vertical direction is larger than a dimension of one developing chamber in the vertical direction and is equal to or smaller than a dimension of two developing chambers stacked on each other in the vertical direction. 10. The apparatus of claim 9 , wherein the developing chambers and the second heat treatment chamber in the developing block are disposed on one side of the transfer chamber, and the supercritical chamber is disposed on the one side and an opposite side of the transfer chamber. 11. The apparatus of claim 10 , wherein the coating block includes a plurality of coating blocks and the developing block includes a plurality of developing blocks, the coating blocks and the developing blocks being vertically stacked one above another.
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