Ultra-responsive phase shifters for depletion mode silicon modulators

Patent metadata

Field	Value
Publication number	US-10908439-B2
Application number	US-201916384517-A
Country	US
Kind code	B2
Filing date	Apr 15, 2019
Priority date	May 14, 2013
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

First claim

What is claimed is:

1. A phase shifter device comprising:
an optical waveguide comprising:
a p-type region on one side of the optical waveguide;
an n-type region on another side of the optical waveguide; and
an overlap region between the p-type region and the n-type region, including a junction line between the p-type region and the n-type region wrapping around a center of the optical waveguide forming: a concave side with one of a p-type or n-type dopant in a top and bottom of the overlap region, a convex side with another of a p-type or an n-type dopant type in a middle part of the overlap region, and two lateral PN junctions.

2. The device according to claim 1 , wherein the optical waveguide comprises a rib waveguide including a rib width W, and a slab waveguide; and
wherein the overlap region is within the rib waveguide, and includes an overlap region width D.

3. The device according to claim 2 , wherein the rib width W is at least 100 nm less than the overlap region width D.

4. The device according to claim 3 , wherein the rib waveguide includes at least a 50 nm p-type and n-type doped margin.

5. The device according to claim 2 , wherein the p-type region further comprises a p-type contact terminal for receiving electrical signals from a first electrode; and
wherein the n-type region further comprises an n-type contact terminal for receiving electrical signals from a second electrode.

6. The device according to claim 5 , further comprising a P+ intermediate implantation in the slab waveguide between the rib waveguide and the p-type contact terminal, and an N+ intermediate implantation in the slab waveguide between the rib waveguide and the n-type contact terminal.

7. The device according to claim 1 , wherein the junction line defines a non-planar junction interface;
wherein the p-type region is on the concave side, and the n-type region is on the convex side.

8. The device according to claim 1 , wherein the junction line defines a non-planar junction interface;
wherein the n-type region is on the concave side, and the p-type region is on the convex side.

9. The device according to claim 1 , wherein the junction line has a shape similar in shape to one of English letters “U”, “C”, and “S”.

10. The device according to claim 1 , wherein the optical waveguide comprises silicon.

11. The device according to claim 10 , wherein the p-type region is doped with boron.

12. The device according to claim 11 , wherein the n-type region is doped with one of phosphorous.

13. A ring modulator device comprising:
a first optical waveguide including an input port and an output port; and
a phase shifter device in a circular configuration comprising:
a second optical waveguide in optical communication with the first optical waveguide, comprising:
a p-type region on one side of the second optical waveguide;
an n-type region on another side of the second optical waveguide; and
an overlap region between the p-type region and the n-type region, including a junction line between the p-type region and the n-type region wrapping around a center of the second optical waveguide forming: a concave side with one of a p-type or n-type dopant in a top and bottom of the overlap region, a convex side with another of a p-type or an n-type dopant type in a middle part of the overlap region, and two lateral PN junctions.

14. The device according to claim 13 , wherein the second optical waveguide comprises a rib waveguide including a width W, and a slab waveguide; and
wherein the overlap region is within the rib waveguide, and includes an overlap region width D;
wherein the rib width W is at least 100 nm less than the overlap region width D.

15. The device according to claim 14 , wherein the rib waveguide includes at least a 50 nm p-type and n-type doped margin.

16. The device according to claim 14 , wherein the p-type region further comprises a p-type contact terminal for receiving electrical signals from a first electrode;
wherein the n-type region further comprises an n-type contact terminal for receiving electrical signals from a second electrode; and
wherein the second waveguide further comprises a P+ intermediate implantation in the slab waveguide between the rib waveguide and the p-type contact terminal, and an N+ intermediate implantation in the slab waveguide between the rib waveguide and the n-type contact terminal.

17. The device according to claim 13 , wherein the junction line defines a non-planar junction interface;
wherein the p-type region is on the concave side, and the n-type region is on the convex side.

18. The device according to claim 13 , wherein the junction line defines a non-planar junction interface;
wherein the n-type region is on the concave side, and the p-type region is on the convex side.

19. The device according to claim 13 , wherein the junction line has a shape similar in shape to one of English letters “U”, “C”, and “S”.

20. A Mach Zehnder interferometer modulator device comprising:
an optical input and an optical output;
first and second arms in between the optical input and the optical output, each of the first and second arms including a phase shifter device comprising:
an optical waveguide, comprising:
a p-type region on one side of the optical waveguide;
an n-type region on another side of the optical waveguide; and
an overlap region between the p-type region and the n-type region, including a junction line between the p-type region and the n-type region wrapping around a center of the optical waveguide forming: a concave side with one of a p-type or n-type dopant in a top and bottom of the overlap region, a convex side with another of a p-type or an n-type dopant type in a middle part of the overlap region, and two lateral PN junctions.

Assignees

• Elenion Tech Llc

Inventors

• Baehr-Jones Thomas
• Liu Yang

Classifications

• G02F1/0113

  Glass-based, e.g. silica-based, optical waveguides · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/0152

  using free carrier effects, e.g. plasma effect · CPC title

• G02F1/0356

  controlled by a high-frequency electromagnetic wave component in an electric waveguide structure · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title