Selective deposition of aluminum and nitrogen containing material

Patent metadata

Field	Value
Publication number	US-10903113-B2
Application number	US-202016773064-A
Country	US
Kind code	B2
Filing date	Jan 27, 2020
Priority date	Aug 5, 2015
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

First claim

What is claimed is:

1. A process for selectively forming a material comprising aluminum and nitrogen on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising:
one or more selective deposition sub-cycles comprising selectively depositing the material comprising aluminum and nitrogen on the first surface of the substrate relative to the second different surface of the substrate; and
one or more atomic layer etching sub-cycles comprising etching the deposited material comprising aluminum and nitrogen.

2. The process of claim 1 , wherein the material comprising aluminum and nitrogen is selectively formed on the first surface of the substrate relative to the second different surface of the substrate with a selectivity greater than about 99%.

3. The process of claim 1 , wherein the material comprising aluminum and nitrogen is deposited on the first surface of the substrate relative to the second different surface of the substrate with a selectivity greater than 5% in the one or more selective deposition sub-cycles.

4. The process of claim 1 , wherein the one or more super-cycles additionally comprise exposing the substrate to a pretreatment reactant.

5. The process of claim 4 , wherein the substrate is exposed to the pretreatment reactant prior to the one or more selective deposition sub-cycles.

6. The process of claim 5 , wherein the pretreatment reactant comprises plasma.

7. The process of claim 6 , wherein the plasma is generated from a gas comprising H 2 .

8. The process of claim 1 , wherein the one or more selective deposition sub-cycles comprise:
contacting the substrate with a first vapor phase precursor comprising aluminum; and
contacting the substrate with a second vapor phase precursor comprising nitrogen.

9. The process of claim 8 , wherein the one or more selective deposition sub-cycles are repeated until the one or more selective deposition sub-cycles are no longer selective.

10. The process of claim 8 , wherein the first vapor phase precursor comprising aluminum comprises one of tritertbutylaluminum (TTBA), trimethylaluminum (TMA) or triethylaluminum (TEA).

11. The process of claim 8 , wherein the second vapor phase precursor comprising nitrogen comprises NH 3 .

12. The process of claim 1 , wherein the one or more atomic layer etching sub-cycles comprise:
contacting the substrate with a first vapor phase halide etch reactant; and
contacting the substrate with a second vapor phase etch reactant comprising aluminum.

13. The process of claim 12 , wherein the first vapor phase halide etch reactant comprises NF 3 or NbF 5 .

14. The process of claim 12 , wherein the second vapor phase etch reactant comprising aluminum comprises trimethylaluminum (TMA) or triethylaluminum (TEA).

15. The process of claim 12 , wherein the one or more atomic layer etching sub-cycles are carried out at a process temperature of 300° C.

16. The process of claim 1 , wherein the first surface is a conductive surface and the second different surface is a dielectric surface.

17. The process of claim 1 , wherein the first surface comprises W and the second surface comprises SiO 2 .

18. The process of claim 1 , wherein the first surface comprises TiN and the second surface comprises SiO 2 .

19. The process of claim 1 , wherein the one or more selective deposition sub-cycles are repeated from 1 to 300 times and the one or more atomic layer etching sub-cycles are repeated from 1 to 150 times.

20. The process of claim 1 , wherein the one or more selective deposition sub-cycles comprise contacting the substrate with a first vapor phase precursor comprising trimethylaluminum (TMA) and contacting the substrate with a second vapor phase precursor comprising NH 3 , and the one or more atomic layer etching sub-cycles comprise contacting the substrate with a first vapor phase halide etch reactant comprising NF 3 , and a second vapor phase etch reactant comprising TMA.

Assignees

• Asm Ip Holding Bv

Inventors

• Wang Han
• Xie Qi
• Longrie Delphine
• Maes Jan Willem
• De Roest David
• Hsieh Julian
• Zhu chiyu
• Asikainen Timo
• Kachel Krzysztof
• Profijt Harald

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/69391 Primary

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title