Hydrodesulfurization catalyst and a method of producing thereof
US-2018100107-A1 · Apr 12, 2018 · US
US10894901B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10894901-B2 |
| Application number | US-201716317448-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 12, 2017 |
| Priority date | Jul 15, 2016 |
| Publication date | Jan 19, 2021 |
| Grant date | Jan 19, 2021 |
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The present invention provides a method for producing a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a method for producing a polishing composition, the method including: preparing silica in which an intensity of a peak of a silica four-membered ring structure and an intensity of a peak derived from a silica random network structure when analyzed by Raman spectroscopy satisfy a predetermined requirement; and mixing the silica with a dispersing medium.
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The invention claimed is: 1. A method for producing a polishing composition, the method comprising: selecting silica on the basis that it satisfies the following intensity ratio of Condition 1 when analyzed by Raman spectroscopy; and mixing the silica with a dispersing medium and a pH adjusting agent to adjust a pH at 25° C. to 4.0 or more and less than 6.0, I (490 cm −1 )/ I (800 cm −1 )≤2.30 Condition 1 wherein I (490 cm′) represents an intensity of a peak derived from a silica four-membered ring structure, and I (800 cm −1 ) represents an intensity of a peak derived from a silica random network structure. 2. The production method according to claim 1 , wherein the silica satisfies the following Condition 2 when analyzed by Raman spectroscopy, I (980 cm −1 )/ I (800 cm −1 )≤2.10 Condition 2 wherein I (980 cm −1 ) represents an intensity of a peak derived from a silanol group and I (800 cm −1 ) represents an intensity of a peak derived from a silica random network structure. 3. The production method according to claim 1 , wherein a content of the silica is 0.01% by mass or more and 5% by mass or less with respect to the total amount of the composition. 4. The production method according to claim 1 , wherein the silica is colloidal silica. 5. The production method according to claim 1 , wherein the dispersing medium includes water. 6. The production method according to claim 1 , wherein the silica has a true density of 1.90 g/cm 3 or more. 7. The production method according to claim 1 , wherein the pH adjusting agent is acetic acid or sulfuric acid. 8. A polishing method comprising: producing a polishing composition by the method set forth in claim 1 ; and polishing an object to be polished containing oxygen atoms and silicon atoms using the polishing composition.
of semiconductor materials · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
involving a dielectric removal step · CPC title
Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
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