Method for producing polishing composition and polishing method

US10894901B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10894901-B2
Application numberUS-201716317448-A
CountryUS
Kind codeB2
Filing dateJun 12, 2017
Priority dateJul 15, 2016
Publication dateJan 19, 2021
Grant dateJan 19, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention provides a method for producing a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a method for producing a polishing composition, the method including: preparing silica in which an intensity of a peak of a silica four-membered ring structure and an intensity of a peak derived from a silica random network structure when analyzed by Raman spectroscopy satisfy a predetermined requirement; and mixing the silica with a dispersing medium.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a polishing composition, the method comprising: selecting silica on the basis that it satisfies the following intensity ratio of Condition 1 when analyzed by Raman spectroscopy; and mixing the silica with a dispersing medium and a pH adjusting agent to adjust a pH at 25° C. to 4.0 or more and less than 6.0, I (490 cm −1 )/ I (800 cm −1 )≤2.30  Condition 1 wherein I (490 cm′) represents an intensity of a peak derived from a silica four-membered ring structure, and I (800 cm −1 ) represents an intensity of a peak derived from a silica random network structure. 2. The production method according to claim 1 , wherein the silica satisfies the following Condition 2 when analyzed by Raman spectroscopy, I (980 cm −1 )/ I (800 cm −1 )≤2.10  Condition 2 wherein I (980 cm −1 ) represents an intensity of a peak derived from a silanol group and I (800 cm −1 ) represents an intensity of a peak derived from a silica random network structure. 3. The production method according to claim 1 , wherein a content of the silica is 0.01% by mass or more and 5% by mass or less with respect to the total amount of the composition. 4. The production method according to claim 1 , wherein the silica is colloidal silica. 5. The production method according to claim 1 , wherein the dispersing medium includes water. 6. The production method according to claim 1 , wherein the silica has a true density of 1.90 g/cm 3 or more. 7. The production method according to claim 1 , wherein the pH adjusting agent is acetic acid or sulfuric acid. 8. A polishing method comprising: producing a polishing composition by the method set forth in claim 1 ; and polishing an object to be polished containing oxygen atoms and silicon atoms using the polishing composition.

Assignees

Inventors

Classifications

  • of semiconductor materials · CPC title

  • Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

  • involving a dielectric removal step · CPC title

  • Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title

  • C09G1/02Primary

    containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

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What does patent US10894901B2 cover?
The present invention provides a method for producing a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a method for producing a polishing composition, the method including: preparing silica in which an intensity of a peak of a silica four-membered ring structure and an intensity of a pe…
Who is the assignee on this patent?
Fujimi Inc
What technology area does this patent fall under?
Primary CPC classification C09G1/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 19 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).