Metal oxide film and method for forming metal oxide film

Patent metadata

Field	Value
Publication number	US-10892282-B2
Application number	US-201816024997-A
Country	US
Kind code	B2
Filing date	Jul 2, 2018
Priority date	Nov 8, 2012
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

First claim

The invention claimed is:

1. A transistor comprising:
an oxide semiconductor layer comprising a channel formation region including a region where a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of the oxide semiconductor layer.

2. The transistor according to claim 1 ,
wherein a size of a nanocrystal of the oxide semiconductor layer is less than or equal to 10 nm.

3. The transistor according to claim 1 ,
wherein a measurement area of the nanobeam electron diffraction pattern is less than or equal to an area with a diameter of 10 nmφ.

4. The transistor according to claim 1 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

5. The transistor according to claim 1 ,
wherein the channel formation region includes a nanocrystal, and
wherein a crystalline peak corresponding to the nanocrystal is not observable in an XRD spectrum with respect to the oxide semiconductor layer.

6. The transistor according to claim 5 ,
wherein the XRD spectrum is obtained by out-of-plane method.

7. A transistor comprising:
an oxide semiconductor layer comprising a channel formation region, a first region in contact with a source electrode, and a second region in contact with a drain electrode,
wherein a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of each of the channel formation region, the first region, and the second region.

8. The transistor according to claim 7 ,
wherein a measurement area of the nanobeam electron diffraction pattern is less than or equal to an area with a diameter of 10 nmφ.

9. The transistor according to claim 7 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

10. The transistor according to claim 7 ,
wherein a size of a nanocrystal of the oxide semiconductor layer is greater than or equal to 1 nm.

11. The transistor according to claim 7 ,
wherein the channel formation region includes a nanocrystal, and
wherein a crystalline peak corresponding to the nanocrystal is not observable in an XRD spectrum with respect to each of the channel formation region, the first region, and the second region.

12. The transistor according to claim 11 ,
wherein the XRD spectrum is obtained by out-of-plane method.

13. A transistor comprising:
a gate electrode, an oxide semiconductor layer, a gate insulating film between the gate electrode and the oxide semiconductor layer, a source electrode, and a drain electrode,
wherein the oxide semiconductor layer comprises a region where a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of a cross-section,
wherein the oxide semiconductor layer comprises a plurality of nanocrystals,
wherein surface orientations of the plurality of nanocrystals are random,
wherein a size of each of the plurality of nanocrystals is smaller than or equal to 10 nm, and
wherein the gate insulating film comprises silicon oxide.

14. The transistor according to claim 13 ,
wherein the gate insulating film is over the oxide semiconductor layer, and
wherein the gate electrode is over the gate insulating film.

15. The transistor according to claim 13 ,
wherein the oxide semiconductor layer comprises carbon, and
wherein a concentration of carbon is less than 4×10 21 atoms/cm 3 .

16. The transistor according to claim 13 ,
wherein the oxide semiconductor layer comprises hydrogen, and
wherein a concentration of hydrogen is less than 1×10 22 atoms/cm 3 .

17. The transistor according to claim 13 ,
wherein the oxide semiconductor layer comprises carbon and hydrogen,
wherein a concentration of carbon is less than 4×10 21 atoms/cm 3 , and
wherein a concentration of hydrogen is less than 1×10 22 atoms/cm 3 .

18. The transistor according to claim 13 ,
wherein the nanobeam electron diffraction pattern is measured using electron beam whose beam diameter is 1 nmφ.

19. The transistor according to claim 13 ,
wherein the oxide semiconductor layer comprises a first oxide semiconductor layer and a second oxide semiconductor layer over the first oxide semiconductor layer.

20. The transistor according to claim 13 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

21. The transistor according to claim 13 ,
wherein a crystalline peak corresponding to the nanocrystals is not observable in an XRD spectrum with respect to the region of the oxide semiconductor layer.

22. The transistor according to claim 13 ,
wherein the gate electrode comprises at least one element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten.

23. The transistor according to claim 13 , wherein each of the source electrode and the drain electrode comprises at least one element selected from aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten.

24. The transistor according to claim 13 ,
wherein a side surface of the oxide semiconductor layer is in contact with the source electrode and the drain electrode.

25. A transistor comprising:
a gate electrode, an oxide semiconductor layer, and a gate insulating film between the gate electrode and the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises a region where a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of a cross-section,
wherein the oxide semiconductor layer comprises a plurality of nanocrystals,
wherein surface orientations of the plurality of nanocrystals are random,
wherein the gate electrode comprises at least one element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten, and
wherein the gate insulating film comprises silicon oxide.

26. The transistor according to claim 25 ,
wherein the gate electrode is over the oxide semiconductor layer.

27. The transistor according to claim 25 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

28. The transistor according to claim 25 ,
wherein the plurality of nanocrystals are distributed such that a crystalline peak corresponding to the plurality of nanocrystals is not observable in an XRD spectrum with respect to the region of the oxide semiconductor layer.

29. A display device comprising:
a first wiring, a second wiring, a third wiring, a first transistor, a second transistor comprising the transistor according to claim 2 , and a light-emitting element,
wherein the first wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor,
wherein the second wiring is electrically connected a gate electrode of the first transistor,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one electrode of the light-emitting element,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the third wiring,
wherein the second transistor comprises the oxide semiconductor layer, a gate insulating film over

Assignees

• Semiconductor Energy Lab

Inventors

• Takahashi Masahiro
• Hirohashi Takuya
• Tsubuku Masashi
• Ishihara Noritaka
• Oota Masashi

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426 Primary

  Oxides · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/2901

  Materials · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title