Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9252288-B2
Application number	US-201314140044-A
Country	US
Kind code	B2
Filing date	Dec 24, 2013
Priority date	Nov 20, 2008
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO 3 (ZnO) m (m=1) are included in an amorphous structure represented by InGaO 3 (ZnO) m (m>0).

First claim

What is claimed is:

1. A semiconductor device comprising:
a transistor comprising an oxide semiconductor layer,
wherein the oxide semiconductor layer contains In, Ga, and Zn,
wherein the oxide semiconductor layer comprises crystals represented by InGaZnO 4 ,
wherein a Zn content by atomic percent in the oxide semiconductor layer is less than an In content by atomic percent in the oxide semiconductor layer,
wherein the Zn content by atomic percent in the oxide semiconductor layer is less than a Ga content by atomic percent in the oxide semiconductor layer,
wherein the Ga content by atomic percent in the oxide semiconductor layer is less than the In content by atomic percent in the oxide semiconductor layer, and
wherein a proportion of the crystals represented by InGaZnO 4 to a whole of crystals is 80 volume % or more.

2. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer is formed over and in contact with an insulating layer.

3. The semiconductor device according to claim 2 , wherein the insulating layer comprises at least one film selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film.

4. A semiconductor device comprising:
a transistor comprising an oxide semiconductor layer,
wherein the oxide semiconductor layer comprises a channel formation region,
wherein the channel formation region comprises In, Ga, and Zn,
wherein the channel formation region includes crystals represented by InGaZnO 4 ,
wherein a Zn content by atomic percent in the oxide semiconductor layer is less than an In content by atomic percent in the oxide semiconductor layer,
wherein the Zn content by atomic percent in the oxide semiconductor layer is less than a Ga content by atomic percent in the oxide semiconductor layer,
wherein the Ga content by atomic percent in the oxide semiconductor layer is less than the In content by atomic percent in the oxide semiconductor layer, and
wherein a proportion of the crystals represented by InGaZnO 4 to a whole of crystals is 80 volume % or more.

5. The semiconductor device according to claim 4 , wherein the oxide semiconductor layer is formed over and in contact with an insulating layer.

6. The semiconductor device according to claim 5 , wherein the insulating layer comprises at least one film selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film.

7. A semiconductor device comprising:
a substrate;
a gate electrode over the substrate;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer; and
a source electrode and a drain electrode in electrical contact with the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises In, Ga, and Zn,
wherein the oxide semiconductor layer includes crystals represented by InGaZnO 4 ,
wherein a Zn content by atomic percent in the oxide semiconductor layer is less than an In content by atomic percent in the oxide semiconductor layer,
wherein the Zn content by atomic percent in the oxide semiconductor layer is less than a Ga content by atomic percent in the oxide semiconductor layer,
wherein the Ga content by atomic percent in the oxide semiconductor layer is less than the In content by atomic percent in the oxide semiconductor layer, and
wherein a proportion of the crystals represented by InGaZnO 4 to a whole of crystals is 80 volume % or more.

8. The semiconductor device according to claim 7 , wherein the gate insulating layer comprises one film or a stack of films selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film.

9. The semiconductor device according to claim 7 , further comprising a protective insulating layer over and in contact with the oxide semiconductor layer, the source electrode, and the drain electrode.

10. The semiconductor device according to claim 7 , wherein the oxide semiconductor layer has a depression.

Assignees

• Semiconductor Energy Lab

Inventors

• Akimoto Kengo
• Sakata Junichiro
• Hirohashi Takuya
• Takahashi Masahiro
• Kishida Hideyuki
• Miyanaga Akiharu

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10D64/01332

  Making the insulator · CPC title

• H10D64/01316

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title