Semiconductor device

Patent metadata

Field	Value
Publication number	US-10892232-B2
Application number	US-201916558544-A
Country	US
Kind code	B2
Filing date	Sep 3, 2019
Priority date	Mar 15, 2019
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A semiconductor device according to an embodiment includes a semiconductor substrate comprising a first face, and a second face on an opposite side to the first face. A semiconductor element is provided on the first face of the semiconductor substrate. A polycrystalline or non-crystalline first material layer is provided at least on an outer edge of the first face of the semiconductor substrate. A second material layer is provided on the second face of the semiconductor substrate. The second material layer transmits laser light.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate comprising a first face, and a second face on an opposite side to the first face;
a semiconductor element provided on the first face of the semiconductor substrate;
a polycrystalline or non-crystalline first material layer provided at least on an outer edge of the first face of the semiconductor substrate; and
a second material layer provided on the second face of the semiconductor substrate, the second material layer transmitting laser light.

2. The device of claim 1 , wherein the first material layer is provided also between the semiconductor element and the semiconductor substrate.

3. The device of claim 2 , wherein the first material layer includes any of polysilicon, amorphous silicon, a silicon dioxide film, a silicon nitride film, diamond-like carbon, an yttrium oxide, a zirconium oxide, an aluminum oxide, tungsten, and molybdenum.

4. The device of claim 2 , wherein the second material layer transmits of laser light, the laser light having a wavelength of 800 nanometers to 2500 nanometers.

5. The device of claim 2 , wherein the second material layer is higher in a Young's modulus than the semiconductor substrate.

6. The device of claim 2 , wherein the second material layer includes any of a silicon nitride film, diamond-like carbon, an yttrium oxide, a zirconium oxide, and an aluminum oxide.

7. The device of claim 2 , wherein a single modified layer resulting from the laser light is provided on lateral faces of the semiconductor substrate between the first face and the second face.

8. The device of claim 1 , wherein the first material layer includes any of polysilicon, amorphous silicon, a silicon dioxide film, a silicon nitride film, diamond-like carbon, an yttrium oxide, a zirconium oxide, an aluminum oxide, tungsten, and molybdenum.

9. The device of claim 8 , wherein the second material layer transmits of laser light, the laser light having a wavelength of 800 nanometers to 2500 nanometers.

10. The device of claim 8 , wherein the second material layer is higher in a Young's modulus than the semiconductor substrate.

11. The device of claim 8 , wherein the second material layer includes any of a silicon nitride film, diamond-like carbon, an yttrium oxide, a zirconium oxide, and an aluminum oxide.

12. The device of claim 8 , wherein a single modified layer resulting from the laser light is provided on lateral faces of the semiconductor substrate between the first face and the second face.

13. The device of claim 1 , wherein the second material layer transmits of laser light, the laser light having a wavelength of 800 nanometers to 2500 nanometers.

14. The device of claim 1 , wherein the second material layer is higher in a Young's modulus than the semiconductor substrate.

15. The device of claim 1 , wherein the second material layer includes any of a silicon nitride film, diamond-like carbon, an yttrium oxide, a zirconium oxide, and an aluminum oxide.

16. The device of claim 1 , wherein a single modified layer resulting from the laser light is provided on lateral faces of the semiconductor substrate between the first face and the second face.

17. The device of claim 16 , wherein the modified layer is provided on the lateral faces substantially in parallel to outer edges of the first and second faces.

18. The device of claim 1 , wherein the first material layer does not have a crystal orientation in a specific direction.

Assignees

• Toshiba Memory Corp

Inventors

• Ono Takanobu
• Fujita Tsutomu
• Kume Ippei
• Tomono Akira

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10W46/503

  Located in scribe lines · CPC title

• H10W46/00

  Marks applied to devices, e.g. for alignment or identification · CPC title

• H10W42/121 Primary

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title