Edge seal configurations for a lower electrode assembly

Patent metadata

Field	Value
Publication number	US-10892197-B2
Application number	US-201816115627-A
Country	US
Kind code	B2
Filing date	Aug 29, 2018
Priority date	Dec 26, 2013
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.

First claim

What is claimed is:

1. A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly comprising:
a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate;
an edge seal comprising a compressible ring mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate; and
at least one gas passage in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove, wherein the at least one gas passage extends from a gas source through the base plate to the annular space to pressurize the annular space and includes a plurality of outlets in fluid communication with the annular space.

2. The lower electrode assembly of claim 1 , further comprising:
the gas source, wherein the gas source is configured to supply inert gas to the gas passage, wherein the gas source is configured to maintain the inert gas at a pressure of 100 mTorr to 100 Torr in the annular space.

3. The lower electrode assembly of claim 2 , further comprising:
a pressure monitor configured to monitor pressure in the annular space, wherein the pressure monitor is configured to generate an alarm if gas flow to the annular space exceeds a threshold flow rate indicating inadequate sealing by the compressible ring.

4. The lower electrode assembly of claim 1 , wherein the inner wall defines an inner radius of the mounting groove, wherein an opening of the mounting groove faces radially outward relative to the inner wall, and wherein the mounting groove includes at least one step extending downward from the upper plate on an upper wall of the mounting groove or extending upward from the base plate on a lower wall of the mounting groove.

5. The lower electrode assembly of claim 4 , wherein the compressible ring is axially compressed between the upper plate and the base plate to cause an outer surface of the compressible ring to be biased radially outward relative to the inner wall toward the at least one step, wherein the at least one step is located radially outward of the compressible ring relative to the inner wall such that an outer surface of the compressible ring engages the at least one step to retain the compressible ring within the mounting groove when (a) compressed between the upper plate and the base plate and (b) the plasma processing chamber is pumped down.

6. The lower electrode assembly of claim 1 , wherein the compressible ring is one of an O-ring and an elastomer band having a non-circular cross-section.

7. The lower electrode assembly of claim 1 , wherein the compressible ring comprises a silicone core and a fluoropolymer coating.

8. The lower electrode assembly of claim 1 , wherein each metal element of the compressible ring has a metallic content less than 5000 parts per billion.

9. The lower electrode assembly of claim 1 , wherein surfaces of the groove are polished to a surface roughness Ra of 32 microinch or less.

10. A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly comprising:
a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate;
an edge seal comprising a compressible ring mounted in the mounting groove such that the compressible ring is axially compressed; and
a backing seal located between the edge seal and an inner wall of the mounting groove, wherein the backing seal includes a vertical inner surface, horizontal upper and lower surfaces, and a concave outer surface configured to interface with the edge seal.

11. The lower electrode assembly of claim 10 , wherein the inner wall defines an inner radius of the mounting groove, wherein an opening of the mounting groove faces radially outward relative to the inner wall, and wherein the mounting groove includes at least one step extending downward from the upper plate on an upper wall of the mounting groove or extending upward from the base plate on a lower wall of the mounting groove.

12. The lower electrode assembly of claim 11 , wherein the compressible ring is axially compressed between the upper plate and the base plate to cause an outer surface of the compressible ring to be biased radially outward relative to the inner wall toward the at least one step, wherein the at least one step is located radially outward of the compressible ring relative to the inner wall such that an outer surface of the compressible ring engages the at least one step to retain the compressible ring within the mounting groove when (a) compressed between the upper plate and the base plate and (b) the plasma processing chamber is pumped down.

13. The lower electrode assembly of claim 10 , wherein the compressible ring is one of an O-ring and an elastomer band having a non-circular cross-section.

14. The lower electrode assembly of claim 10 , wherein the compressible ring comprises a silicone core and a fluoropolymer coating.

15. The lower electrode assembly of claim 10 , wherein each metal element of the compressible ring has a metallic content less than 5000 parts per billion.

16. The electrode assembly of claim 10 , wherein surfaces of the groove are polished to a surface roughness Ra of 32 microinch or less.

Assignees

• Lam Res Corp

Inventors

• Gaff Keith William
• Busche Matthew
• Ricci Anthony
• Povolny Henry S
• Stevenot Scott

Classifications

• H10P72/0421 Primary

  for drying etching · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H01J37/32082 Primary

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H01J37/32522

  Temperature · CPC title

• H01J37/32513

  Sealing means, e.g. sealing between different parts of the vessel · CPC title