Apparatus for combined stem and EDS tomography

Patent metadata

Field	Value
Publication number	US-10890545-B2
Application number	US-201916401024-A
Country	US
Kind code	B2
Filing date	May 1, 2019
Priority date	Nov 9, 2016
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

The disclosed technology relates to an apparatus for tomographic analysis of a specimen based on STEM images of the specimen, as well as for tomographic analysis of the chemical composition of the specimen based on X-ray detection by EDS detectors. In one aspect, the apparatus comprises an elongated specimen holder that is rotatable about a longitudinal axis and is configured to hold a pillar-shaped specimen at the end of the holder. The longitudinal axis is positioned in a sample plane which is perpendicular to the beam direction of an electron beam produced by an electron gun. The apparatus also comprises at least two EDS detectors, each EDS detector having a detecting surface oriented perpendicularly to the sample plane and intersecting with the sample plane, wherein the two EDS detectors are positioned on opposite lateral sides of the specimen.

First claim

What is claimed is:

1. An apparatus for tomographic analysis of a specimen based on scanning transmission electron microscopy (STEM) images of the specimen, as well as for tomographic analysis of the chemical composition of the specimen based on X-ray detection by energy dispersion X-ray spectroscopy (EDS) detectors, the apparatus comprising:
an electron gun for producing an electron beam that propagates in a beam direction;
a lens arrangement for focusing the beam on the specimen;
a specimen holder for positioning the specimen, the holder being rotatable about an axis perpendicular to the beam direction;
one or more detectors for capturing STEM images; and
a set of EDS detectors,
wherein the specimen holder is an elongated holder that is rotatable about a longitudinal axis and is configured to hold a pillar-shaped specimen having a proximal end and a distal end, the proximal end being attached to an end of the holder and the distal end extending outward from the holder in the direction of the longitudinal axis, the longitudinal axis being positioned in a sample plane, the sample plane being essentially perpendicular to the beam direction,
wherein the apparatus comprises at least two EDS detectors, each EDS detector having a detecting surface oriented essentially perpendicularly to the sample plane and intersecting with the sample plane, and
wherein the two EDS detectors are positioned on opposite sides of the longitudinal axis of the specimen holder such that the detecting surfaces are configured to face opposite sides of the specimen.

2. The apparatus according to claim 1 , further comprising a third EDS detector having a detecting surface that is:
essentially perpendicular to the sample plane and intersecting with the sample plane, and
essentially perpendicular to the detector's longitudinal axis, such that the detecting surface of the third EDS detector is configured to face the distal end of the specimen.

3. The apparatus according to claim 2 , wherein the detecting surface of the EDS detectors is symmetrical with respect to the center of the detecting surface or with respect to a central line of the detecting surface, and wherein the EDS detectors are arranged such that the detecting surfaces are symmetrical with respect to the sample plane.

4. The apparatus according to claim 2 , wherein the distance between the detecting surfaces of the laterally placed EDS detectors and the longitudinal axis of the specimen holder is between 2 mm and 5 mm.

5. The apparatus according to claim 2 , wherein the apparatus comprises one or more STEM detectors, and wherein the apparatus is configured such that:
a STEM acquisition and an EDS acquisition take place during the same electron bombardment, and
no STEM and EDS acquisitions are required which are taking place during different electron bombardments.

6. The apparatus according to claim 2 , wherein the EDS detectors are silicon drift detectors.

7. The apparatus according to claim 2 , wherein the shape of the detecting surface of the EDS detectors is adapted to the configuration of the apparatus so as to be able to place the EDS detectors closer to the specimen compared to an apparatus wherein the detecting surface is circular.

8. The apparatus according to claim 2 , wherein at least the laterally positioned EDS detectors are movable, such that the EDS detectors can be placed closer to or farther away from the holder's longitudinal axis.

9. A method of performing a tomographic analysis of a pillar-shaped specimen with an apparatus according to claim 2 , the method comprising:
positioning the specimen at a series of angular positions about the longitudinal axis of the specimen holder;
at each angular position, directing an electron beam at subsequent raster points on the specimen;
for each raster point, acquiring signals from the one or more STEM detectors and signals from the EDS detectors, to obtain 2-dimensional images and compositional maps of the specimen at the various angular positions; and
applying a back-projection algorithm to reconstruct a 3-dimensional volume of the specimen in terms of the morphology and the chemical composition of the specimen,
wherein for each raster point, the STEM signals and the EDS signals are acquired during the same electron bombardment.

10. The apparatus according to claim 1 , wherein the detecting surface of the EDS detectors is symmetrical with respect to the center of the detecting surface or with respect to a central line of the detecting surface, and wherein the EDS detectors are arranged such that the detecting surfaces are symmetrical with respect to the sample plane.

11. A method of performing a tomographic analysis of a pillar-shaped specimen with an apparatus according to claim 10 , the method comprising:
positioning the specimen at a series of angular positions about the longitudinal axis of the specimen holder;
at each angular position, directing an electron beam at subsequent raster points on the specimen;
for each raster point, acquiring signals from the one or more STEM detectors and signals from the EDS detectors, to obtain 2-dimensional images and compositional maps of the specimen at the various angular positions; and
applying a back-projection algorithm to reconstruct a 3-dimensional volume of the specimen in terms of the morphology and the chemical composition of the specimen,
wherein for each raster point, the STEM signals and the EDS signals are acquired during the same electron bombardment.

12. The apparatus according to claim 1 , wherein a distance between the detecting surfaces of the laterally placed EDS detectors and the longitudinal axis of the specimen holder is between 2 mm and 5 mm.

13. A method of performing a tomographic analysis of a pillar-shaped specimen with an apparatus according to claim 12 , the method comprising:
positioning the specimen at a series of angular positions about the longitudinal axis of the specimen holder;
at each angular position, directing an electron beam at subsequent raster points on the specimen;
for each raster point, acquiring signals from the one or more STEM detectors and signals from the EDS detectors, to obtain 2-dimensional images and compositional maps of the specimen at the various angular positions; and
applying a back-projection algorithm to reconstruct a 3-dimensional volume of the specimen in terms of the morphology and the chemical composition of the specimen,
wherein for each raster point, the STEM signals and the EDS signals are acquired during the same electron bombardment.

14. The apparatus according to claim 1 , wherein the apparatus comprises one or more STEM detectors, and wherein the apparatus is configured such that:
a STEM acquisition and an EDS acquisition take place during the same electron bombardment, and
no STEM and EDS acquisitions are required which are taking place during different electron bombardments.

15. The apparatus according to claim 14 , further configured such that the STEM acquisition and the EDS acquisition take place simultaneously.

16. The apparatus according to claim 1 , wherein the EDS detectors are silicon drift detectors.

17. The apparatus according to claim 1 , wherein the shape of the detecting surface of the EDS detectors is adapted to the configuration of the apparatus so as to be able to place the EDS detectors closer to the specimen compared to an apparatus wherein the detecting surface is circular.

18. The apparatus according to claim 1 , wherein at least the laterally positioned EDS detectors are movable, such that the EDS det

Assignees

• Imec Vzw

Inventors

• Bender Hugo

Classifications

• H01J2237/24495

  Signal processing, e.g. mixing of two or more signals · CPC title

• H01J2237/2802

  Transmission microscopes · CPC title

• G01N23/2252 Primary

  Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA] · CPC title

• H01J37/20

  Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support · CPC title

• H01J2237/2442

  Energy-dispersive (Si-Li type) spectrometer · CPC title