Stress sensor for semiconductor components

Patent metadata

Field	Value
Publication number	US-10607901-B2
Application number	US-201816121369-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Sep 5, 2017
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

An example embodiment may include a sensor for monitoring and/or measuring stress in a semiconductor component. The component may include a substrate formed of a semiconductor material. The substrate may include a planar main surface. The sensor may include at least one slanted surface of the substrate material, the slanted surface being defined by an oblique inclination angle with respect to the main surface of the substrate. The sensor may also include at least one straight resistive path extending on at least part of the slanted surface and a plurality of contacts and terminals for accessing the at least one resistive path. The contacts and terminals may allow for the measurement of an electrical resistance of the resistive path and an assessment of a shear stress in a plane that is not parallel to the main surface of the substrate.

First claim

What is claimed is:

1. A sensor for monitoring or measuring stress in a semiconductor component, the component comprising a substrate formed of a semiconductor material, the substrate comprising a planar main surface, the sensor comprising:
at least one slanted surface of the semiconductor material, the slanted surface being defined by an oblique inclination angle with respect to the main surface of the substrate,
at least one straight resistive path extending on at least part of the slanted surface,
a plurality of contacts and terminals for accessing the at least one straight resistive path, thereby allowing for a measurement of an electrical resistance of the straight resistive path and an assessment of a shear stress in a plane that is not parallel to the main surface of the substrate.

2. The sensor according to claim 1 , comprising at least one pair of slanted surfaces having complementary inclination angles relative to the main surface, and comprising at least one pair of resistive paths which lie in a first plane, wherein the at least one pair of resistive paths comprises a first path on a first slanted surface and a second path on a second slanted surface, wherein the at least one pair of resistive paths also have complementary inclination angles relative to the main surface, and wherein the sensor is configured to measure the shear stress in the first plane defined by the at least one pair of resistive paths.

3. The sensor according to claim 2 , comprising two pairs of slanted surfaces and two pairs of slanted resistive paths, wherein the sensor is configured to measure the shear stress in a first plane and a second plane, and wherein the first plane and the second plane are two mutually non-parallel planes.

4. The sensor according to claim 1 , further comprising a plurality of planar resistive paths parallel to the plane of the main surface of the substrate and located in a vicinity of the planar resistive paths, as well as a plurality of contacts and terminals for accessing the planar resistive paths, thereby allowing for measurement of an electrical resistance of the planar resistive paths and assessment of one or more additional stress components.

5. The sensor according to claim 1 , wherein the one or more slanted surfaces are slanted sidewalls of one or more cavities that are open to the main surface of the substrate or to another surface of the substrate.

6. The sensor according to claim 1 , wherein the one or more slanted surfaces are slanted sidewalls of 3-dimensional shapes extending outward from the main surface of the substrate or from another surface of the substrate.

7. The sensor according to claim 5 , further comprising:
a first cavity or a 3D shape having the shape of a 4-walled pyramid or a frustum of a 4-walled pyramid, where in the first cavity or the 3D shape comprises:
a rectangular or square base;
a centrally located tip area;
four slanted walls extending respectively between four edges of the base and the centrally located tip area, the four slanted walls forming two pairs of slanted surfaces, wherein surfaces of each pair have complementary inclination angles relative to the main surface of the substrate; and
four slanted ribs extending respectively between corners of the base and the centrally located tip area;

four electrical contacts; and
four slanted resistive paths respectively on the four slanted walls, the four slanted resistive paths extending between the centrally located tip area and the four electrical contacts, wherein the slanted resistive paths on opposite surfaces have complementary inclination angles relative to the main surface of the substrate.

8. The sensor according to claim 7 , comprising a fifth electrical contact located in the centrally located tip area, the four slanted resistive paths extending respectively between the four electrical contacts and the fifth electrical contact.

9. The sensor according to claim 7 , wherein the four slanted resistive paths merge in the centrally located tip area and wherein the slanted resistive paths on opposing walls of the first cavity or the 3D shape are matched in terms of their electric resistance.

10. The sensor according to claim 7 , further comprising:
two planar resistive paths in a vicinity of the first cavity or the 3D shape, the two planar resistive paths running along perpendicular lines in the plane of the main surface of the substrate;
electrical contacts at a start and end location of each planar resistive path, and terminals for accessing the contacts;
four additional electrical contacts located around the first cavity or the 3D shape, one on each of four corners of the first cavity or the 3D shape, and terminals for accessing the four additional electrical contacts; and
four slanted resistive paths, each path running along one of the slanted ribs of the first cavity or the 3D shape, between the respective additional electrical contacts and the centrally located tip area of the first cavity or the 3D shape.

11. The sensor according to claim 10 , further comprising two additional planar resistive paths and contacts at a start and end location of each additional planar resistive path, wherein the two additional planar resistive paths run parallel respectively to the two planar resistive paths, wherein the two additional planar resistive paths run on an opposite side of the first cavity or the 3D shape with respect to the respective planar resistive paths, and wherein each pair of parallel planar resistive paths is matched in terms of their electrical resistance.

12. The sensor according to claim 11 , wherein the two pairs of parallel planar resistive paths form edges of a rectangle, with four contacts located on the corners of the rectangle.

13. The sensor according to claim 12 , further comprising:
two planar resistive paths in a vicinity of the first cavity or the 3D shape, the two planar resistive paths running along perpendicular lines in the plane of the main surface of the substrate;
contacts at a start and end location of each planar resistive path, and terminals for accessing the contacts;
a second cavity or 3D shape of the same shape as the first cavity or 3D shape, and located in close proximity to the first cavity or 3D shape;
four contacts located on four corners of the second cavity or 3D shape and terminals for allowing access to the four corner contacts; and
four slanted resistive paths, each path running along ribs of the second cavity or 3D shape, between the respective corner contacts and a tip area of the second cavity or 3D shape.

14. The sensor according to claim 1 , wherein the semiconductor material is a crystalline semiconductor material, and wherein inclination angles are defined by a crystallographic structure of the crystalline semiconductor material.

15. The sensor according to claim 1 , wherein the sensor comprises multiple resistive paths obtained by implantation of dopant elements in narrow areas of the slanted surfaces and in narrow areas of the main surface of the substrate or a surface parallel thereto, and wherein the sensor comprises resistive paths formed by implantation of dopant elements of a first polarity type, as well as resistive paths formed by implantation of dopant elements of a second polarity type, wherein the second polarity type is opposite to the first polarity type.

16. A semiconductor component comprising a stress sensor in accordance with claim 1 .

Assignees

• Imec Vzw

Inventors

• Hiblot Gaspard
• Van Der Plas Geert
• Van Huylenbroeck Stefaan

Classifications

• H10P74/273

  Interconnections for measuring or testing, e.g. probe pads · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• G01L1/2293

  of the semi-conductor type · CPC title

• G01L1/16

  using properties of piezoelectric devices · CPC title