Lithographic method

Patent metadata

Field	Value
Publication number	US-10884339-B2
Application number	US-201916435630-A
Country	US
Kind code	B2
Filing date	Jun 10, 2019
Priority date	Jun 18, 2013
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

First claim

The invention claimed is:

1. A free electron laser, comprising:
an electron source configured to produce an electron beam comprising a plurality of bunches of relativistic electrons;
an undulator arranged to receive the electron beam and guide it along a periodic path so that the electron beam interacts with radiation within the undulator, stimulating emission of radiation and providing a radiation beam; and
an adjustable compressor configured to control at least one selected from: (i) a charge density distribution of one or more electron bunches of the plurality of electron bunches along a direction of propagation of the electron beam before it enters the undulator; or (ii) an average energy of one or more electron bunches of the plurality of electron bunches before it enters the undulator.

2. The free electron laser of claim 1 , wherein the adjustable compressor comprises an adjustment mechanism arranged to control at least one selected from: (a) the chirp of one or more electron bunches of the plurality of electron bunches; or (b) the average energy of electrons in one or more electron bunches of the plurality of electron bunches.

3. The free electron laser of claim 2 , wherein the adjustment mechanism comprises a resonant cavity.

4. The free electron laser of claim 3 , wherein the resonant cavity is arranged such that a phase of the resonant cavity with respect to the electron beam remains substantially constant and the phase is such that an electric field within the cavity is substantially zero for electrons at a centre of each bunch of the electron beam passing through the resonant cavity.

5. The free electron laser of claim 3 , wherein the resonant cavity is arranged such that a phase of the resonant cavity with respect to the electron beam remains substantially constant and the phase is such that an electric field within the cavity is substantially at its maximum or minimum value for electrons at a centre of each bunch of the electron beam passing through the resonant cavity.

6. The free electron laser of claim 3 , wherein the resonant cavity is a normally conducting resonant cavity.

7. The free electron laser of claim 1 , wherein the adjustable compressor further comprises a magnetic compressor disposed downstream of the adjustment mechanism and arranged to compress one or more electron bunches of the plurality of electron bunches along a direction of propagation of the electron beam, the compression being dependent on a chirp of the electron beam as it enters the magnetic compressor.

8. The free electron laser of claim 1 , wherein the electron source comprises a mechanism configured to produce a bunched electron beam and a linear accelerator operable to accelerate the bunched electron beam, the linear accelerator comprising a plurality of radio frequency cavities, wherein the adjustable compressor is separate from the linear accelerator.

9. The free electron laser of claim 8 , wherein the adjustable compressor comprises an adjustment mechanism arranged to control at least one selected from: (a) the chirp of one or more electron bunches of the plurality of electron bunches; or (b) the average energy of electrons in one or more bunches of the plurality of electron bunches and wherein the adjustment mechanism is disposed downstream of the mechanism configured to produce a bunched electron beam and upstream of the linear accelerator.

10. The free electron laser of claim 1 , further comprising:
a controller; and
a sensor configured to determine a value indicative of a power of the radiation beam, or indicative of a dose of radiation delivered to a target location by the radiation beam, and to output a signal indicative of the value to the controller,
wherein the controller is configured to vary the charge density distribution of one or more electron bunches of the plurality electron bunches and/or the average energy of electrons within each electron bunch of the plurality of electron bunches, in response to the signal output by the sensor.

11. A lithographic system comprising:
the free electron laser according to claim 1 ; and
at least one lithographic apparatus, each of the at least one lithographic apparatus arranged to receive at least a portion of at least one radiation beam produced by the free electron laser.

12. An apparatus comprising:
a radiation source configured to produce radiation, the radiation source comprising an adjustment mechanism configured to control a wavelength of the radiation;
an optical system arranged to guide the radiation from the radiation source to a target location for receipt of the radiation, the optical system having a wavelength dependent transmittance or reflectance;
a controller; and
a sensor configured to determine a value indicative of a power of the radiation, or indicative of a dose of radiation delivered to the target location by the radiation, and to output a signal indicative thereof to the controller,
wherein the controller is configured to vary the wavelength of the radiation using the adjustment mechanism in response to the signal output by the sensor.

13. The apparatus of claim 12 , wherein the radiation source comprises a free electron laser, the free electron laser comprising:
an electron source configured to produce an electron beam comprising a plurality of bunches of relativistic electrons; and
an undulator arranged to receive the electron beam and guide it along a periodic path so that the electron beam interacts with radiation within the undulator, stimulating emission of radiation and providing a radiation beam,
wherein the adjustment mechanism is configured to vary an average energy of electrons in one or more electron bunches of the plurality of electron bunches before those one more electron bunches enter the undulator.

14. The apparatus of claim 13 , wherein the electron source comprises a mechanism configured to produce a bunched electron beam and a linear accelerator operable to accelerate the bunched electron beam, the linear accelerator comprising a plurality of radio frequency cavities, wherein the adjustment mechanism is separate from the linear accelerator.

15. The apparatus of claim 12 , wherein the adjustment mechanism comprises a resonant cavity.

16. The apparatus of claim 15 , wherein the resonant cavity is a normally conducting resonant cavity.

17. The apparatus of claim 15 , wherein the resonant cavity is arranged such that a phase of the resonant cavity with respect to the electron beam remains substantially constant and the phase is such that an electric field within the cavity is substantially at its maximum or minimum value for electrons at a centre of one or more electron bunches of the plurality of electron bunches of the electron beam passing through the resonant cavity.

18. A free electron laser, comprising:
an electron source configured to produce an electron beam comprising a plurality of bunches of relativistic electrons, the electron beam having a first frequency;
an undulator arranged to receive the electron beam and guide it along a periodic path so that the electron beam interacts with radiation within the undulator, stimulating emission of radiation and providing a radiation beam; and
an adjustable resonant cavity arranged between the electron source and the undulator and arranged to operate at a second frequency such that a chirp of electron bunches of the plurality of the electron bunches and/or an average energy of electrons in electron bunches of the plurality of electron bunches, varies with time.

19. The free electron laser

Assignees

• Asml Netherlands Bv

Inventors

• Engelen Wouter Joep
• Luiten Otger Jan
• Nikipelov Andrey Alexandrovich
• Banine Vadim Yevgenyevich
• De Jager Pieter Willem Herman
• Loopstra Erik Roelof

Classifications

• G03F7/70008 Primary

  Production of exposure light, i.e. light sources · CPC title

• G02B26/023

  comprising movable attenuating elements, e.g. neutral density filters · CPC title

• G01J1/0418

  using attenuators · CPC title

• G01J1/429

  applied to measurement of ultraviolet light (using counting tubes G01T) · CPC title

• H05H7/18

  Cavities; Resonators {(travelling-wave tubes H01J23/18; hyperfrequency cavities in general H01P7/04, H01P7/06)} · CPC title