Sputtering target and method of producing the same
US-2016118232-A1 · Apr 28, 2016 · US
Sputtering target and method for producing sputtering target
US10883169B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10883169-B2 |
| Application number | US-201615770407-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 24, 2016 |
| Priority date | Oct 26, 2015 |
| Publication date | Jan 5, 2021 |
| Grant date | Jan 5, 2021 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound phase is 150 μm or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.
First claim
Opening claim text (preview).
The invention claimed is: 1. A sputtering target having a composition, containing: 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities, wherein an In single phase and a Cu 11 In 9 compound phase exist, and an XRD peak ratio I(In)/I(Cu 11 In 9 ) between the In single phase and the Cu 11 In 9 compound phase is in a range of 0.01 to 3, an average grain size of the Cu 11 In 9 compound phase is 150 μm or less, an amount of oxygen is 500 mass ppm or less, and a theoretical density ratio is 85% or more. 2. The sputtering target according to claim 1 , wherein an average grain size of the In single phase is 1 mm or less. 3. The sputtering target according to claim 1 , further containing: one or more selected from the group consisting of NaF, NaCl, Na 2 S, and Na 2 Se as a Na compound, wherein an average grain size of the Na compound is 10 μm or less. 4. The sputtering target according to claim 1 , further containing: one or two selected from the group consisting of KF, KCl, K 2 S, and K 2 Se as a K compound, wherein an average grain size of the K compound is 10 μm or less.
Assignees
Inventors
Classifications
Metallic powder characterised by the size or surface area of the particles · CPC title
Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga · CPC title
atomising using a fluid (using centrifugal force B22F9/10) · CPC title
CuInSe2 material PV cells · CPC title
Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00 · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10883169B2 cover?
- The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound ph…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp, Solar Frontier Kk
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 05 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).