Sputtering target and method of producing the same

Patent metadata

Field	Value
Publication number	US-2016118232-A1
Application number	US-201414769898-A
Country	US
Kind code	A1
Filing date	Feb 25, 2014
Priority date	Feb 25, 2013
Publication date	Apr 28, 2016
Grant date	—

Abstract

A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic % of Ga; 0.1 to 10.0 total atomic % of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.

First claim

1 . A sputtering target comprising: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic % of Ga; 0.1 to 10.0 total atomic % of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.

2 . The sputtering target according to claim 1 , wherein a theoretical density ratio is 95% or more, and an oxygen content is 800 weight ppm or less.

3 . The sputtering target according to claim 1 , wherein a bending strength is 200 MPa or more.

4 . The sputtering target according to claim 1 , wherein an average grain size of a metallic phase including one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, is 500 μm or less.

5 . The sputtering target according to claim 1 , further comprising, with respect to an all of metal elements in the sputtering target, 0.01 to 10.0 total atomic % of one or more elements selected from Li, K, and Na.

6 . A production method of the sputtering target according to claim 1 , the method comprising the step of producing an ingot by melting Cu and Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg at 1050° C. or higher to obtain a melted material, and by casting the melted material.

7 . A production method of the sputtering target according to claim 1 , the method comprising the steps of:
preparing a raw material powder comprising: Cu; Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, each of which are included as an elemental powder or an alloy powder including two or more of Cu, Ga, Al, Zn, Sn, Ag, and Mg; and sintering the raw material powder in a vacuum; in an inert atmosphere; or in a reduction atmosphere.

8 . A production method of the sputtering target according to claim 5 , the method comprising the step of:
preparing a raw material powder by mixing: a metal powder comprising: Cu; Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, each of which are included as an elemental powder or an alloy powder including two or more of Cu, Ga, Al, Zn, Sn, Ag, and Mg; and NaF powder, Na 2 S powder, or Na 2 Se powder; and sintering the raw material powder in a vacuum; in an inert atmosphere; or in a reduction atmosphere.

9 . The method of producing the sputtering target according to claim 7 , wherein the average grain size of the raw material powder is 1 to 500 μm.

10 . The sputtering target according to claim 2 , wherein a bending strength is 200 MPa or more.

11 . The sputtering target according to claim 2 , wherein an average grain size of a metallic phase including one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, is 500 μm or less.

12 . The sputtering target according to claim 3 , wherein an average grain size of a metallic phase including one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, is 500 μm or less.

13 . The sputtering target according to claim 2 , further comprising, with respect to an all of metal elements in the sputtering target, 0.01 to 10.0 total atomic % of one or more elements selected from Li, K, and Na.

14 . The sputtering target according to claim 3 , further comprising, with respect to an all of metal elements in the sputtering target, 0.01 to 10.0 total atomic % of one or more elements selected from Li, K, and Na.

15 . The sputtering target according to claim 4 , further comprising, with respect to an all of metal elements in the sputtering target, 0.01 to 10.0 total atomic % of one or more elements selected from Li, K, and Na.

16 . A production method of the sputtering target according to claim 2 , the method comprising the step of producing an ingot by melting Cu and Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg at 1050° C. or higher to obtain a melted material, and by casting the melted material.

17 . A production method of the sputtering target according to claim 3 , the method comprising the step of producing an ingot by melting Cu and Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg at 1050° C. or higher to obtain a melted material, and by casting the melted material.

18 . A production method of the sputtering target according to claim 2 , the method comprising the steps of:
preparing a raw material powder comprising: Cu; Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, each of which are included as an elemental powder or an alloy powder including two or more of Cu, Ga, Al, Zn, Sn, Ag, and Mg; and sintering the raw material powder in a vacuum; in an inert atmosphere; or in a reduction atmosphere.

19 . A production method of the sputtering target according to claim 3 , the method comprising the steps of:
preparing a raw material powder comprising: Cu; Ga; and one or more metal elements selected from Al, Zn, Sn, Ag, and Mg, each of which are included as an elemental powder or an alloy powder including two or more of Cu, Ga, Al, Zn, Sn, Ag, and Mg; and sintering the raw material powder in a vacuum; in an inert atmosphere; or in a reduction atmosphere.

20 . The method of producing the sputtering target according to claim 8 , wherein the average grain size of the raw material powder is 1 to 500 μm.

Assignees

• Mitsubishi Materials Corp

Inventors

• Zhang Shoubin
• Umemoto Keita

Classifications

• B22F1/09

  Mixtures of metallic powders · CPC title

• C22F1/00

  Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working (apparatus for mechanical working of metal B21, B23, B24) · CPC title

• B22F2304/10

  Micron size particles, i.e. above 1 micrometer up to 500 micrometer · CPC title

• C22F1/16

  of other metals or alloys based thereon · CPC title

• B22F2201/10

  Inert gases · CPC title