Method of forming tin-containing material film and method of synthesizing a tin compound

Patent metadata

Field	Value
Publication number	US-10882873-B2
Application number	US-201916249067-A
Country	US
Kind code	B2
Filing date	Jan 16, 2019
Priority date	Dec 2, 2016
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I):

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

First claim

What is claimed is:

1. A method of forming a tin-containing material film, the method comprising:
forming a monolayer of a tin precursor compound on a substrate in a reaction space, the tin precursor compound having a structure represented by Chemical Formula (I);
forming a tin-containing material film by supplying a reactant onto the monolayer; and
removing unreacted reactant from the vicinity of a surface of the tin-containing material film by purging the unreacted reactant,

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group, and
wherein:
the reactant includes NH 3 , a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and
the tin material film is a tin nitride film.

2. The method as claimed in claim 1 , wherein the tin precursor compound has a constant atomic layer deposition rate in a temperature range of about 270° C. to about 350° C.

3. The method as claimed in claim 1 , wherein the tin precursor compound has a constant atomic layer deposition rate in a temperature range of about 270° C. to about 320° C.

4. The method as claimed in claim 1 , wherein the tin-containing material film does not include halogen elements.

5. The method as claimed in claim 1 , wherein forming the monolayer of the tin precursor compound having the structure represented by Chemical Formula (I) on the substrate in the reaction space includes supplying the tin precursor compound having the structure represented by Chemical Formula (I) onto the substrate for about 1 second to about 100 seconds.

6. The method as claimed in claim 1 , wherein the tin-containing material film is a conductive barrier film, a tunnel barrier film of a gate dielectric film, a barrier metal film for liquid crystals, a member for thin film solar cells, a member for semiconductor equipment, or a nano-structure.

7. A method of forming a tin-containing material film, the method comprising:
providing a substrate in a reactor;
supplying a tin precursor to the substrate to form a monolayer of the tin precursor, the tin precursor being represented by Chemical Formula (I);
supplying a reactant onto the monolayer to form the tin-containing material film; and
purging the reactor,

wherein, in Chemical Formula (I), R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group, and
wherein:
the reactant includes NH 3 , a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and
the tin material film is a tin nitride film.

8. The method as claimed in claim 7 , wherein the tin-containing material film does not include halogen elements.

9. The method as claimed in claim 7 , wherein the tin precursor is supplied to the substrate for about 1 second to about 100 seconds.

10. The method as claimed in claim 7 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

11. The method as claimed in claim 10 , wherein R 1 and R 2 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

12. A method of forming a tin-containing material film, the method comprising sequentially performing a plurality of deposition cycles, each deposition cycle including:
forming a monolayer of a tin precursor compound on a substrate in a reaction space, the tin precursor compound having a structure represented by Chemical Formula (I);
forming a tin-containing material film by supplying a reactant onto the monolayer; and
removing unreacted reactant from the vicinity of a surface of the tin-containing material film by purging the unreacted reactant,

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group, and
wherein:
the reactant includes NH 3 , a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and
the tin material film is a tin nitride film.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Ryu Seung-Min
• Kim Youn-Soo
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Jeon Sang-Yong

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F7/2284 Primary

  Compounds with one or more Sn-N linkages · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/407

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title