Mask pattern forming method, fine pattern forming method, and film deposition apparatus

Patent metadata

Field	Value
Publication number	US-10879066-B2
Application number	US-201816157461-A
Country	US
Kind code	B2
Filing date	Oct 11, 2018
Priority date	Sep 29, 2008
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

First claim

What is claimed is:

1. A mask pattern forming method comprising:
providing a substrate including a first pattern on a thin film;
slimming the first pattern on the thin film into a second pattern;
forming a first conformal film on the second pattern and the thin film; and
forming a second conformal film on the first conformal film,
wherein the first conformal film and the second conformal film constitute the mask pattern,
wherein slimming the first pattern and forming the second conformal film are performed using an oxygen containing gas plasma and forming the first conformal film is performed without using any oxygen containing gas plasma, and
wherein slimming the first pattern and forming the first conformal film and the second conformal film are performed consecutively in a same film deposition apparatus.

2. The mask pattern forming method according to claim 1 , wherein slimming the first pattern and forming the first conformal film and the second conformal film are performed in a same process chamber.

3. The mask pattern forming method according to claim 1 , wherein slimming the first pattern and forming the first conformal film and the second conformal film am performed at temperatures below a heat-resisting temperature of the pattern.

4. The mask pattern forming method according to claim 1 , wherein slimming the first pattern and forming the first conformal film and the second conformal film are performed at temperatures below 100 degrees C.

5. The mask pattern forming method according to claim 2 , further comprising:
purging the process chamber between the slimming the first pattern and the forming the first conformal film.

6. The mask pattern forming method according claim 1 , wherein the first conformal film comprises metal oxide and the second conformal film comprises silicon oxide.

7. The mask pattern forming method according to claim 1 , wherein forming the first conformal film is performed by a cycle of adsorbing an organic metal based precursor on the pattern and the thin film and oxidizing the organic meta 1-based precursor.

8. The mask pattern forming method according to claim 1 , wherein forming the second conformal film is performed by a cycle of adsorbing an aminosilane-based precursor on the first conformal film and oxidizing the aminosilane-based precursor.

9. The mask pattern forming method according to claim 1 , further comprising:
etching the first conformal film and the second conformal film so that the first conformal film and the second conformal film remains as a side wall part on a side face of the pattern.

10. The mask pattern forming method according to claim 9 , further comprising:
removing the pattern so that the side wall part of the first conformal film and the second conformal film remains on the thin film.

Assignees

• Tokyo Electron Ltd

Inventors

• Hasebe Kazuhide
• Nakajima Shigeru
• Ogawa Jun
• Murakami Hiroki

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title