Image sensor with a high absorption layer

Patent metadata

Field	Value
Publication number	US-10868053-B2
Application number	US-201916541499-A
Country	US
Kind code	B2
Filing date	Aug 15, 2019
Priority date	May 31, 2017
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

First claim

What is claimed is:

1. An image sensor comprising:
a substrate;
a periodic structure along a back side of the substrate, wherein the periodic structure comprises a plurality of protrusions defined by the substrate;
a photodetector in the substrate;
a semiconductor layer lining the periodic structure on the back side of the substrate, wherein the semiconductor layer has a first side conforming to the periodic structure and further has a second side on an opposite side of the semiconductor layer as the first side, and wherein the first and second sides each have a periodic cross-sectional profile with sidewalls oriented at acute angles relative to a substrate surface on a front side of the substrate that is opposite the back side; and
a transfer transistor on the front side of the substrate and adjoining the photodetector.

2. The image sensor according to claim 1 , wherein the semiconductor layer is a doped region of the substrate.

3. The image sensor according to claim 1 ,
wherein the transfer transistor has source/drain regions with an opposite doping type as the semiconductor layer.

4. The image sensor according to claim 1 , wherein the photodetector comprises a first doping-type region and a second doping-type region respectively in the substrate and the semiconductor layer, wherein the first and second doping-type regions have opposite doping types and directly contact at a PN junction, and wherein the PN junction is at an interface at which the substrate and the semiconductor layer directly contact.

5. The image sensor according to claim 4 , wherein the second doping-type region is also in the substrate and wraps around a bottom of the first doping-type region.

6. The image sensor according to claim 4 , wherein the first and second doping-type regions are respectively N-type and P-type.

7. The image sensor according to claim 1 , further comprising:
a passivation layer covering the periodic structure and the semiconductor layer on the back side of the substrate, wherein the passivation layer has a first side conforming to the periodic structure and further has a second side with a planar cross-sectional profile, and wherein the second side of the passivation layer is on an opposite side of the passivation layer as the first side of the passivation layer.

8. The image sensor according to claim 1 , further comprising:
a color filter on the back side of the substrate, wherein the semiconductor layer and the periodic structure are directly between the photodetector and the color filter.

9. An image sensor comprising:
a semiconductor substrate;
a pixel sensor on the semiconductor substrate, wherein the pixel sensor has a first pixel boundary and a second pixel boundary respectively on opposite sides of the pixel sensor, and wherein the pixel sensor comprises a photodetector in the semiconductor substrate;
a plurality of protrusions defined by a back side of the semiconductor substrate and laterally between the first and second pixel boundaries; and
a doped semiconductor region on the back side of the semiconductor substrate, wherein the doped semiconductor region conforms to the plurality of protrusions and has a substantially uniform thickness laterally from the first pixel boundary to the second pixel boundary.

10. The image sensor according to claim 9 , further comprising:
a trench isolation structure extending into the semiconductor substrate and comprising a first isolation segment and a second isolation segment that are laterally spaced, wherein the first and second isolation segments are respectively at the first and second pixel boundaries.

11. The image sensor according to claim 9 , wherein the doped semiconductor region is in the semiconductor substrate.

12. The image sensor according to claim 9 , wherein the doped semiconductor region is P-type and comprises silicon.

13. The image sensor according to claim 9 , wherein the doped semiconductor region has an upper boundary and a lower boundary, and wherein the upper and lower boundaries of the doped semiconductor region each have a saw-toothed profile.

14. The image sensor according to claim 9 , wherein the pixel sensor further comprises:
a transfer transistor on a front side of the semiconductor substrate, opposite the back side of the semiconductor substrate, wherein the transfer transistor borders the photodetector; and
a floating diffusion node (FDN) in the semiconductor substrate, wherein the transfer transistor is configured to selectively transfer charge from the photodetector to the FDN.

15. The image sensor according to claim 14 , wherein the doped semiconductor region has an opposite doping type as the FDN.

16. An image sensor comprising:
a substrate having an upper surface, wherein the upper surface has a first saw-toothed profile;
a photodetector in the substrate;
a doped semiconductor region completely covering the photodetector, wherein the doped semiconductor region has a first boundary matching the first saw-toothed profile, and wherein the doped semiconductor region has a second boundary that is on an opposite side of the doped semiconductor region as the first boundary and that has a second saw-toothed profile; and
a passivation layer covering the doped semiconductor region, wherein the passivation layer has a first side conforming to the second boundary and having the second saw-toothed profile, and wherein the passivation layer further has a second side with a smooth cross-sectional profile and on an opposite side of the passivation layer as the first side.

17. The image sensor according to claim 16 , wherein the substrate has a lower surface on an opposite side of the substrate as the upper surface of the substrate, wherein a first tooth in the first saw-toothed profile has a first sidewall, wherein a second tooth in the second saw-toothed profile has a second sidewall, and wherein the first and second sidewalls respectively of the first tooth and the second tooth are at a same angle relative to the lower surface of the substrate.

18. The image sensor according to claim 16 , further comprising:
a micro-lens overlying the photodetector, a plurality of teeth in the first saw-toothed profile, and the doped semiconductor region.

19. The image sensor according to claim 16 , wherein the doped semiconductor region is in the substrate and the first boundary is on an upper side of the doped semiconductor region.

20. The image sensor according to claim 16 , wherein the substrate has a lower surface on an opposite side of the substrate as the upper surface of the substrate, and wherein the image sensor further comprises:
a gate electrode and a gate dielectric layer stacked on the lower surface of the substrate, adjacent to the photodetector.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Chien-Chang
• Tu Chien Nan
• Wu Ming-Chi
• Yeh Yu-Lung
• Jiang Ji Heng

Classifications

• H10F39/011

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title

• H10F39/8057

  Optical shielding · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/026 Primary

  Wafer-level processing · CPC title

• H10F39/8063

  Microlenses · CPC title