Deep trench isolation structures resistant to cracking
US-2025351607-A1 · Nov 13, 2025 · US
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Wu Ming-Chi patents
Wu Ming-Chi is listed as an inventor on 53 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wu Ming-Chi |
| Total patents | 53 |
| First publication | Jan 7, 2016 |
| Latest publication | Nov 13, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor structure with junction leakage reduction
US-2025329577-A1 · Oct 23, 2025 · US
Deep trench isolation structures resistant to cracking
US-12453203-B2 · Oct 21, 2025 · US
LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region
US-12368070-B2 · Jul 22, 2025 · US
Image sensor device with reflective structure
US-11990493-B2 · May 21, 2024 · US
Image sensor with a high absorption layer
US-2023387150-A1 · Nov 30, 2023 · US
Image sensor with a high absorption layer
US-11830892-B2 · Nov 28, 2023 · US
Image sensor device with reflective structure
US-2022278159-A1 · Sep 1, 2022 · US
Deep Trench Isolation Structures Resistant to Cracking
US-2022238572-A1 · Jul 28, 2022 · US
QE approach by double-side, multi absorption structure
US-11393937-B2 · Jul 19, 2022 · US
Recent patents
Latest publications not already listed above.
Semiconductor structure with junction leakage reduction
US-2022199459-A1 · Jun 23, 2022 · US
Image sensor device with reflective layer
US-11342372-B2 · May 24, 2022 · US
Deep trench isolation structures resistant to cracking
US-11302734-B2 · Apr 12, 2022 · US
Qe approach by double-side, multi absorption structure
US-2021119064-A1 · Apr 22, 2021 · US
Image sensor with a high absorption layer
US-2021091125-A1 · Mar 25, 2021 · US
QE approach by double-side, multi absorption structure
US-10879406-B2 · Dec 29, 2020 · US
Image sensor with a high absorption layer
US-10868053-B2 · Dec 15, 2020 · US
Image sensor with an absorption enhancement semiconductor layer
US-10861988-B2 · Dec 8, 2020 · US
Image sensor with an absorption enhancement semiconductor layer
US-10861989-B2 · Dec 8, 2020 · US
Image sensor device with reflective layer
US-2020343289-A1 · Oct 29, 2020 · US
Semiconductor structure and manufacturing method thereof
US-10784150-B2 · Sep 22, 2020 · US
Method for forming image sensor device
US-10734427-B2 · Aug 4, 2020 · US
QE approach by double-side, multi absorption structure
US-10707361-B2 · Jul 7, 2020 · US
Qe approach by double-side, multi absorption structure
US-2020111923-A1 · Apr 9, 2020 · US
Image sensor with an absorption enhancement semiconductor layer
US-2020083390-A1 · Mar 12, 2020 · US
Image sensor with an absorption enhancement semiconductor layer
US-2020083389-A1 · Mar 12, 2020 · US
Image sensor with a high absorption layer
US-10553628-B2 · Feb 4, 2020 · US
QE approach by double-side, multi absorption structure
US-10553733-B2 · Feb 4, 2020 · US
Qe approach by double-side, multi absorption structure
US-2020020816-A1 · Jan 16, 2020 · US
Deep Trench Isolation Structures Resistant to Cracking
US-2020006410-A1 · Jan 2, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 55 |
| Taiwan Semiconductor Mfg Co Ltd | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10F39/8053 | 41 |
| H10F39/8063 | 33 |
| H10F39/024 | 32 |
| H10F39/011 | 32 |
| H01L27/14621 | 30 |