Plating method and plating apparatus

Patent metadata

Field	Value
Publication number	US-10865492-B2
Application number	US-201815937353-A
Country	US
Kind code	B2
Filing date	Mar 27, 2018
Priority date	Mar 31, 2017
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

First claim

What is claimed is:

1. A plating method for plating a substrate having resist opening portions including:
a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying a first process liquid to a surface of the substrate on which the resist opening portions are formed;
a liquid filling step of soaking the substrate passed through the removing step in a second process liquid to fill the resist opening portions of the substrate with the second process liquid; and
a plating step of plating the substrate passed through the liquid filling step, wherein
the resist residue removing step includes a step of scanning the substrate with nozzles,
the nozzles include a first nozzle group and a second nozzle group that are spaced from each other in upper and lower positions in a vertical direction, and
the resist residue removing step includes a step of performing spraying from the first nozzle group and spraying from the second nozzle group to the substrate arranged in the vertical direction at different timings.

2. The plating method according to claim 1 , wherein the resist residue removing step includes a step of spraying the first process liquid to a whole face of the surface on which the resist opening portions are formed.

3. The plating method according to claim 1 , wherein the resist residue removing step includes a step of spraying the first process liquid to the substrate from a leading nozzle group in a travel direction of the nozzles, the leading nozzle group being one of the first nozzle group and the second nozzle group.

4. The plating method according to claim 3 , wherein the first nozzle group is located above the second nozzle group in a vertical direction, and the resist residue removing step includes a step of spraying while nozzle ports of the nozzles constituting the first nozzle group are inclined upwards with respect to a direction perpendicular to the surface of the substrate on which the resist opening portions are formed, and a step of spraying while nozzle ports of the nozzles constituting the second nozzle group are inclined downwards with respect to the direction perpendicular to the surface of the substrate on which the resist opening portions are formed.

5. The plating method according to claim 1 , wherein the resist residue removing step includes a step of moving the substrate relatively to the nozzles.

6. The plating method according to claim 1 , wherein the resist residue removing step includes a step of spraying while nozzle ports of the nozzles are inclined with respect to a direction perpendicular to the surface of the substrate on which the resist opening portions are formed.

7. The plating method according to claim 1 , wherein the resist residue removing step includes a step of arranging the substrate vertically.

8. The plating method according to claim 7 , wherein the resist residue removing step includes a step of spraying the first process liquid from the nozzles arranged in a first processing bath, and a step of accommodating the substrate vertically in the first processing bath under a state in which spraying has been performed from the nozzles.

9. The plating method according to claim 1 , wherein the resist residue removing step has a step of spraying the first process liquid under a pressure ranging from not less than 0.05 MPa to not more than 0.45 MPa.

10. The plating method according to claim 1 , wherein the resist residue removing step includes a step of spraying the first process liquid at a flow speed ranging from not less than 2.5 m/sec to not more than 15.0 m/sec and at a flow rate ranging from not less than 10 L/min to not more than 20 L/min.

11. The plating method according to claim 1 , wherein the liquid filling step includes a step of stirring the second process liquid.

12. The plating method according to claim 1 , wherein the liquid filling step includes a step of applying impact or vibration to the substrate.

13. The plating method according to claim 1 , wherein the liquid filling step includes a step of supplying the second process liquid from the lower side of the second processing bath in which the substrate is accommodated, a step of discharging the second process liquid from the upper side of the second processing bath, and a step of circulating the second process liquid in the second processing bath.

14. The plating method according to claim 1 , wherein the liquid filling step includes a step of arranging the substrate in the second processing bath so that the surface of the substrate on which the resist opening portions are formed faces upwards and the substrate is inclined.

15. The plating method according to claim 1 , wherein the first process liquid is liquid different from the second process liquid.

16. The plating method according to claim 1 , wherein the first process liquid includes any one of pure water, pure water containing either surfactant or citric acid, sulfuric acid, sulfuric acid containing either surfactant or citric acid, ionic water containing CO 2 ion or the like, liquid containing a compound from a polyalkylene glycol group, liquid containing a compound from an alkylene glycol group containing an amino group, methanesulfonic acid, and any combination thereof.

17. The plating method according to claim 1 , wherein the second process liquid includes any one of deaerated water, pure water containing either surfactant or citric acid, sulfuric acid, sulfuric acid containing either surfactant or citric acid, ionic water containing CO 2 ion or the like, liquid containing a compound from a polyalkylene glycol group, liquid containing a compound from an alkylene glycol group containing an amino group, methanesulfonic acid, and any combination thereof.

Assignees

• Ebara Corp

Inventors

• Fujikata Jumpei
• Shimoyama Masashi
• Miyamoto Ryu
• Ishimoto Kentaro

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10W20/043

  for electroplating · CPC title

• C25D7/12 Primary

  Semiconductors · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C23C18/1803

  of metallic material surfaces or of a non-specific material surfaces · CPC title