Methods and apparatus for calculating substrate model parameters and controlling lithographic processing

Patent metadata

Field	Value
Publication number	US-10859930-B2
Application number	US-201916665022-A
Country	US
Kind code	B2
Filing date	Oct 28, 2019
Priority date	Dec 12, 2014
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

First claim

The invention claimed is:

1. A method comprising:
defining a substrate model for representing disturbances of features on a substrate to which patterns are to be applied by a lithographic process, the substrate model defined as a combination of basis functions, the basis functions including an edge basis function for representing an effect related to a substrate edge;
receiving measurements of structures on at least one previous substrate other than, or in addition to, the substrate; and
calculating, by a hardware computer system, substrate model parameters using the measurements and the basis functions.

2. The method of claim 1 , wherein the edge basis function decreases monotonically with increasing distance from a substrate edge.

3. The method of claim 1 , wherein the substrate is of generally circular form, and the edge basis function comprises a radial basis function.

4. The method of claim 1 , wherein the substrate model parameters comprise two parameters related to the edge basis function.

5. The method of claim 1 , wherein the substrate model is defined to represent disturbances in a selected direction in the plane of the substrate.

6. The method of claim 1 , wherein the edge basis function can be selectively enabled or disabled.

7. A method comprising:
receiving first measurements of structures on substrates that have been subjected to lithographic processing;
using the first measurements of disturbances to calculate first substrate model parameters using the method as claimed in claim 1 ; and
controlling lithographic processing of a subsequent substrate using the calculated first substrate model parameters,
wherein the controlling of lithographic processing of the subsequent substrate comprises:
receiving second measurements of disturbances on the subsequent substrate, the second measurements having a lower number per substrate than the first measurements; and
using the second measurements to calculate second substrate model parameters for the subsequent substrate using a model having a lower order than a model used to calculate the first substrate model parameters.

8. The method of claim 7 , wherein the controlling of lithographic processing of the subsequent substrate further comprises controlling lithographic processing of the subsequent substrate using the calculated first substrate model parameters in combination with the second substrate model parameters.

9. The method of claim 7 , wherein the controlling of lithographic processing includes selectively enabling or disabling use of substrate model parameters related to the edge basis function.

10. A computer program product comprising a non-transitory computer-readable medium having machine readable instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
define a substrate model for representing disturbances of features on a substrate to which patterns are to be applied by a lithographic process, the substrate model defined as a combination of basis functions, the basis functions including an edge basis function for representing an effect related to a substrate edge;
receive measurements of structures on at least one previous substrate other than, or in addition to, the substrate; and
calculate substrate model parameters using the measurements and the basis functions.

11. The computer program product of claim 10 , wherein the edge basis function decreases monotonically with increasing distance from a substrate edge.

12. The computer program product of claim 10 , wherein the substrate is of generally circular form, and the edge basis function comprises a radial basis function.

13. The computer program product of claim 10 , wherein the substrate model parameters comprise two parameters related to the edge basis function.

14. The computer program product of claim 10 , wherein the substrate model is defined to represent disturbances in a selected direction in the plane of the substrate.

15. The computer program product of claim 10 , wherein the edge basis function can be selectively enabled or disabled.

16. The computer program product of claim 10 , wherein the instructions are further configured to cause the computer system to:
receive first measurements of structures on substrates that have been subjected to lithographic processing;
use the first measurements of disturbances to calculate first substrate model parameters; and
determine control information for controlling lithographic processing of a subsequent substrate using the calculated first substrate model parameters,
wherein the determination of the control information for controlling lithographic processing of the subsequent substrate comprises:
receipt of second measurements of disturbances on the subsequent substrate, the second measurements having a lower number per substrate than the first measurements; and
use of the second measurements to calculate second substrate model parameters for the subsequent substrate using a model having a lower order than a model used to calculate the first substrate model parameters.

17. The computer program product of claim 16 , wherein the instructions configured to determine control information for controlling lithographic processing of the subsequent substrate are further configured to determine the control information using the calculated first substrate model parameters in combination with the second substrate model parameters.

18. The computer program product of claim 16 , wherein the instructions configured to determine control information for controlling lithographic processing of the subsequent substrate are further configured to selectively enable or disable use of substrate model parameters related to the edge basis function.

19. An apparatus for controlling lithographic processing in which substrates are subjected to lithographic processing, the apparatus comprising:
a computer system; and
the computer program product of claim 16 .

20. An apparatus for controlling lithographic processing in which substrates are subjected to lithographic processing, the apparatus comprising:
a computer system; and
the computer program product of claim 10 .

Assignees

• Asml Netherlands Bv

Inventors

• Menger Jasper
• Aben Paul Cornelis Hubertus
• Mos Everhardus Cornelis

Classifications

• G03F7/706839

  Modelling, e.g. modelling scattering or solving inverse problems · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G03F9/7046 Primary

  Strategy, e.g. mark, sensor or wavelength selection · CPC title