Organic electronic component and method for producing an organic electronic component

Patent metadata

Field	Value
Publication number	US-10854834-B2
Application number	US-201815979281-A
Country	US
Kind code	B2
Filing date	May 14, 2018
Priority date	May 24, 2017
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

The invention relates to an organic electronic component comprising a cathode, an anode, at least one light-emitting layer which is arranged between the anode and the cathode, a first layer, which comprises a first matrix material and a dopant, a second layer, which comprises a second matrix material, wherein the first layer is arranged between the second layer and the anode, wherein the second layer is arranged between the anode and the at least one light-emitting layer, wherein the dopant is a fluorinated sulfonimide metal salt of the following formula 1:

First claim

The invention claimed is:

1. An organic electronic component comprising
a cathode,
an anode,
at least one light-emitting layer which is arranged between the anode and the cathode,
a first layer, which comprises a dopant and a first matrix material comprising organic small non-polymeric molecules, and
a second layer, which comprises a second matrix material comprising organic small non-polymeric molecules,
wherein the first layer is arranged between the second layer and the anode,
wherein the second layer is arranged between the anode and the at least one light-emitting layer,
wherein the dopant is a fluorinated sulfonimide metal salt of the following formula 1:

wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 6 g/mol,
wherein 1≤n≤7,
wherein R 1 , R 2 are selected independently of one another and from a group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.

2. The organic electronic component according to claim 1 ,
where M=copper and n=2.

3. The organic electronic component according to claim 1 ,
wherein the first layer is formed as a hole injection layer and directly adjoins the anode,
wherein the second layer is directly adjacent to the first layer and is formed as a hole-transport layer.

4. The organic electronic component according to claim 1 ,
wherein the first matrix material and the second matrix material are identical, wherein the second layer is free of the dopant.

5. The organic electronic component according to claim 1 ,
wherein the dopant is a p-type dopant and contains a proportion between and including 1% by volume and 30% by volume in the first matrix material.

6. The organic electronic component according to claim 1 ,
wherein the first layer has a layer thickness of less than 50 nm and/or wherein the second layer has a layer thickness of 50 nm to 300 nm.

7. The organic electronic component according to claim 1 ,
wherein the first and the second matrix material are the same,
wherein the second layer is free of the dopant,
wherein the dopant in the first layer has a proportion in the first matrix material between 1% by volume and 30% by volume, inclusive, wherein the first layer has a layer thickness of less than 50 nm, and wherein the second layer has a layer thickness of 50 nm to 300 nm.

8. The organic electronic component according to claim 1 ,
wherein the first layer is hole injecting, wherein the fluorinated sulfonimide metal salt is a p-type dopant, which acts as an electron acceptor in relation to the first matrix material.

9. The organic electronic component according to claim 1 ,
wherein M is copper, zinc, aluminium, bismuth, potassium, rubidium, cesium or tin.

10. The organic electronic component according to claim 1 ,
wherein R 1 , R 2 are selected independently of one another and from a group consisting of a linear or branched, at least partially fluorine-substituted alkyl radical having 1 to 10 carbon atoms, an at least partially fluorine-substituted aryl radical having 1 to 20 carbon atoms and an at least partially fluorine-substituted arylalkyl radical having 1 to 20 carbon atoms.

11. The organic electronic component according to claim 1 ,
wherein R 1 and R 2 are the same substituents and are selected from the following group:

12. The organic electronic component according to claim 1 ,
which is an organic light-emitting diode.

13. The organic electronic component according to claim 1 ,
which is a solar cell, a photodetector or an organic field-effect transistor.

14. The organic electronic component according to claim 1 ,
wherein the first layer is produced by co-deposition of the matrix material and of the dopant via physical vapour deposition.

15. The organic electronic component according to claim 1 ,
wherein the first layer is produced by means of a wet-chemical method.

16. The organic electronic component according to claim 1 ,
wherein the first and/or second matrix material are selected independently of one another from a group consisting of HTM014, HTM081, HTM163, HTM222, NHT5, NHT49, NHT51, EL-301, EL-22T, HTM226, HTM355, HTM133, HTM334 and HTM604.

17. The method for producing an organic electronic component according to claim 1 comprising the steps of:
A) provision of the anode,
B) applying the first layer to the anode, which acts in a hole injecting manner,
wherein the dopant has a proportion between 1 vol. % (inclusive) and 30% vol. % (inclusive) in the first matrix material,
C) applying the second layer, which acts in a hole-transporting manner, to the first layer,
D) applying the at least one light-emitting layer to the second layer, and
E) applying the cathode to the at least one light-emitting layer.

18. An organic electronic component comprising
a cathode,
an anode,
at least one light-emitting layer which is arranged between the anode and the cathode,
a hole injecting and/or hole transporting layer, which comprises a matrix material and a dopant,
wherein the hole injecting and/or hole transporting layer is arranged between the anode and the at least one light-emitting layer,
wherein the hole injecting and/or hole transporting layer comprises an interface doping with the dopant on the anode side, wherein the interface doping comprises a doping of only at least one interface of the hole injecting and/or hole transporting layer while the majority of the hole injecting and/or hole transporting layer remains undoped,
wherein the dopant is a fluorinated sulfonimide metal salt of the following formula 1:

wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 6 g/mol,
wherein 1≤n≤7, and
wherein R 1 , R 2 are selected independently of one another and from a group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.

Assignees

• Osram Oled Gmbh
• Pictiva Displays International Ltd

Inventors

• Rausch Andreas
• Gerlitzki Niels

Classifications

• H10K50/82

  Cathodes · CPC title

• H10K50/18

  Carrier blocking layers · CPC title

• H10K50/81

  Anodes · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• Y02E10/549

  Organic PV cells · CPC title