Three-dimensional memory device containing bit line switches

Patent metadata

Field	Value
Publication number	US-10854619-B2
Application number	US-201816213180-A
Country	US
Kind code	B2
Filing date	Dec 7, 2018
Priority date	Dec 7, 2018
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

A three-dimensional memory device includes memory stack structures in multiple memory arrays. Bit lines are split into multiple portions traversing different memory arrays. Each sense amplifier is connected to a first portion of a respective bit line via a respective first switching transistor device, and is connected to a second portion of the respective bit line via a respective second switching transistor device. The switching transistor devices connect each sense amplifier to one portion of the bit lines without connecting to another portion of the bit lines, thereby reducing the RC delay. The switching transistor devices may be provided as vertical field effect transistors located at a memory array level, or may be provided in another semiconductor chip.

First claim

What is claimed is:

1. A circuit, comprising:
a first memory block region;
a second memory block region;
a first switch;
a second switch;
a first portion of a first bit line traversing the first memory block region and electrically connected to the first switch;
a second portion of the first bit line traversing the second memory block region and electrically connected to the second switch;

a first interconnect; and
a sense amplifier electrically connected to the first portion of the first bit line through the first switch, and the sense amplifier electrically connected to the second portion of the first bit line through the second switch,

wherein:
the sense amplifier is located below the first and the second memory block regions; and
the first interconnect extends below the first and the second memory block regions to electrically contact the sense amplifier.

2. The circuit of claim 1 , wherein the first interconnect is located between the first and the second memory block regions.

3. The circuit of claim 1 , wherein:
the sense amplifier is electrically connected to the first portion of the first bit line through both the first interconnect and the first switch; and
the sense amplifier is electrically connected to the second portion of the first bit line through both the first interconnect and the second switch.

4. The circuit of claim 3 , wherein:
the first switch comprises a first transistor having a pair of first vertical channels electrically connected in series by a first interconnection pad;
the first interconnect is electrically connected to a first active region of the first transistor;
the first portion of the first bit line is electrically connected to a second active region of the first transistor;
the second switch comprises a second transistor having a pair of second vertical channels electrically connected in series by a second interconnection pad;
the first interconnect is electrically connected to a first active region of the second transistor; and
the second portion of the first bit line is electrically connected to a second active region of the second transistor.

5. The circuit of claim 4 , further comprising:
first gate electrodes laterally surrounding each pair of the first vertical channels; and second gate electrodes laterally surrounding each pair of the second vertical channels,

wherein:
the first gate electrodes are vertically spaced from each other, and are electrically connected to each other; and
the second gate electrodes are vertically spaced from each other, and are electrically connected to each other.

6. The circuit of claim 1 , further comprising:
a third memory block region;
a third switch;
a fourth switch;
a first portion of a second bit line traversing the first and second memory block regions and electrically connected to the third switch;
a second portion of the second bit line traversing the third memory block region and electrically connected to the fourth switch; and
a second interconnect located between the third and the second memory block regions.

7. The circuit of claim 6 , wherein:
the second portion of the first bit line also traverses the third memory block region; the sense amplifier is electrically connected to the first portion of the second bit line through both the second interconnect and the third switch; and
the sense amplifier is electrically connected to the second portion of the second bit line through both the second interconnect and the fourth switch.

8. A device, comprising:
first memory stack structures extending through a first alternating stack of first insulating layers and first electrically conductive layers in a first memory block region;
second memory stack structures extending through a second alternating stack of second insulating layers and second electrically conductive layers in a second memory block region, wherein each of the first and second memory stack structures comprises a respective vertical semiconductor channel and memory film;
a first portion of a first bit line electrically connected to the first memory stack structures;
a second portion of the first bit line electrically connected to the second memory stack structures;
a first interconnect located between the first and the second memory block regions; and
a sense amplifier, wherein the sense amplifier is electrically connected to the first and the second portions of the first bit line through the first interconnect.

9. The device of claim 8 , further comprising a first transistor located in the first memory block region and a second transistor located in the second memory block region.

10. The device of claim 9 , wherein:
the second memory block region is laterally spaced from the first memory block region;
the first portion of the first bit line overlies the first memory block region;
the second portion of the first bit line overlies the second memory block region;
the sense amplifier is electrically connected to the first portion of the first bit line through both the first interconnect and the first transistor; and
the sense amplifier is electrically connected to the second portion of the first bit line through both the first interconnect and the second transistor.

11. The device of claim 10 , wherein:
the first transistor comprises a pair of first vertical semiconductor channels electrically connected in series by a first interconnection pad;
the first interconnect is electrically connected to a first active region of the first transistor;
the first portion of the first bit line is electrically connected to a second active region of the first transistor;
the second transistor comprises a pair of second vertical semiconductor channels electrically connected in series by a second interconnection pad;
the first interconnect is electrically connected to a first active region of the second transistor; and
the second portion of the first bit line is electrically connected to a second active region of the second transistor.

12. The device of claim 11 , further comprising:
first gate electrodes laterally surrounding each pair of the first vertical semiconductor channels; and
second gate electrodes laterally surrounding each pair of the second vertical semiconductor channels,

wherein:
the first gate electrodes are vertically spaced from each other, and are electrically connected to each other;
the second gate electrodes are vertically spaced from each other, and are electrically connected to each other;
each memory film comprises a tunneling dielectric and a charge storage layer;
the first electrically conductive layers comprise first word lines; and
the second electrically conductive layers comprise second word lines.

13. The device of claim 10 , further comprising:
a third memory block region;
a third transistor;
a fourth transistor;
a first portion of a second bit line traversing the first and second memory block regions and electrically connected to the third transistor;
a second portion of the second bit line traversing the third memory block region and electrically connected to the fourth transistor; and
a second interconnect located between the second and third memory block regions.

14. The device of claim 13 , wherein:
the second portion of the first bit line also traverses the third memory block region;
the sense amplifier is electrically connected to the first portion of the second bit line through both the second interconnect and the third transistor; and
the sense amplifier is electrically connected to the second portion of the second bit line through both the

Assignees

• Sandisk Technologies Llc

Inventors

• Chibvongodze Hardwell
• Nishikawa Masatoshi
• Ookuma Naoki
• Ariki Takuya
• Miwa Toru

Classifications

• H10D30/6891

  characterised by the shapes, relative sizes or dispositions of the floating gate electrode · CPC title

• H10D30/694

  characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title

• G11C16/26

  Sensing or reading circuits; Data output circuits · CPC title

• G11C16/24

  Bit-line control circuits · CPC title

• G11C16/30

  Power supply circuits · CPC title