Particle detection for substrate processing

Patent metadata

Field	Value
Publication number	US-10845317-B2
Application number	US-201716080075-A
Country	US
Kind code	B2
Filing date	May 23, 2017
Priority date	May 23, 2016
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

First claim

The invention claimed is:

1. A system for processing a substrate comprising:
a process chamber comprising:
one or more sidewalls enclosing a interior region; and
a substrate support;

a first passageway connected to the process chamber; and
a first particle detector disposed at a first location along the first passageway, wherein the first particle detector comprises:
an energy source configured to emit a first beam;
one or more optical devices configured to direct the first beam along one or more paths, wherein the one or more paths extend through at least a portion of the first passageway; and
a first energy detector disposed at a location other than on the one or more paths; and

a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first energy detector of the first particle detector and the first particle detector and the controller are configured to collectively:
record energy pulses detected by the first energy detector having an amplitude above a first threshold as a detected particle;
perform a first count of a number of detected particles over a first time period;
calculate a particle rate in the first passageway from the first count and the first time period;
record energy pulses detected by the energy detector having an amplitude above a second threshold as a detected large particle, wherein the second threshold is greater than the first threshold;
perform a second count of a number of detected large particles over the first time period;
calculate a large particle rate in the first passageway from the second count and the first time period; and
identify the fault based on calculated particle rate and the calculated large particle rate.

2. The system of claim 1 , wherein the first particle detector further comprises a second energy detector disposed at a location other than on the one or more paths.

3. The system of claim 1 , wherein
the one or more paths includes a plurality of paths; and
the one or more optical devices comprises a scanner that is adjustable to direct the first beam along different paths of the plurality of paths.

4. The system of claim 1 , wherein the one or more optical devices comprises an aperture.

5. The system of claim 1 , wherein the first energy detector is a photomultiplier tube.

6. The system of claim 1 , wherein the energy source is a laser diode.

7. The system of claim 1 , wherein the first particle detector includes a beam dump and the one or more paths begin at the energy source and end at the beam dump.

8. The system of claim 1 , wherein the first passageway is a gas exhaust line for the process chamber.

9. The system of claim 1 , wherein the first passageway is a gas supply line to the process chamber.

10. A method of monitoring a system for processing substrates in a process chamber, the method comprising:
placing a substrate in the process chamber;
exhausting gas from the process chamber or supplying gas to the process chamber through a first passageway;
transmitting a first beam along a first path across a first region of the first passageway;
detecting a first plurality of pulses of energy from the first beam at a first energy detector, wherein the first energy detector is disposed at a location other than on the first path;
identifying a fault based on the detected first plurality of pulses;
recording a second plurality of energy pulses detected by the first energy detector as a detected particle, wherein each pulse in the second plurality of pulses has an amplitude above a first threshold;
performing a first count of a number of detected particles over a first time period;
calculating a particle rate in the first passageway from the first count and the first time period;
identifying the fault based on the calculated particle rate;
recording energy pulses detected by the first energy detector above a second threshold as a detected large particle, wherein the second threshold is greater than the first threshold;
performing a second count of a number of detected large particles over the first time period;
calculating a large particle rate in the first passageway from the count and the first time period; and
identifying the fault based on the calculated large particle rate.

11. The method of claim 10 , further comprising directing the first beam along different paths in the first passageway during the first time period.

12. The method of claim 10 , wherein the first beam is directed through a cylindrical lens.

13. A system for processing a substrate comprising:
a process chamber comprising:
one or more sidewalls enclosing an interior region; and
a substrate support;

a first particle detector disposed in the process chamber, wherein the first particle detector comprises:
an energy source configured to emit a first beam;
a beam dump;
one or more optical devices configured to direct the first beam along one or more paths, wherein the one or more paths begin at the energy source and end at the beam dump; and
a first energy detector disposed at a location other than on the one or more paths; and

a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first energy detector of the first particle detector and the first particle detector and the controller are configured to collectively:
record energy pulses detected by the first energy detector having an amplitude above a first threshold as a detected particle;
perform a first count of a number of detected particles over a first time period;
calculate a particle rate from the first count and the first time period;
record energy pulses detected by the energy detector having an amplitude above a second threshold as a detected large particle, wherein the second threshold is greater than the first threshold;
perform a second count of a number of detected large particles over the first time period;
calculate a large particle rate from the second count and the first time period; and
identify the fault based on calculated particle rate and the calculated large particle rate.

14. The system of claim 13 , wherein the substrate support is not within line of sight of the one or more paths of the first beam of the first particle detector.

15. The system of claim 13 , further comprising a second particle detector disposed in the process chamber, wherein the first particle detector is positioned below the substrate support and the second particle detector is positioned above the substrate support.

Assignees

• Applied Materials Inc

Inventors

• Egan Todd
• Vaez-Iravani Mehdi
• Banna Samer
• Tantiwong Kyle
• Kirk Gregory
• Ravid Abraham
• Shen Yaoming

Classifications

• H10P72/0616 Primary

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• G01N15/0211

  Investigating a scatter or diffraction pattern · CPC title

• G01N2015/1486

  Counting the particles · CPC title

• G01N21/9501 Primary

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title