Single step method for producing In2O3 nanoarray

US10844510B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10844510-B2
Application numberUS-201916554860-A
CountryUS
Kind codeB2
Filing dateAug 29, 2019
Priority dateJun 6, 2018
Publication dateNov 24, 2020
Grant dateNov 24, 2020

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Abstract

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A method of forming a one-dimensional nanoarray of In 2 O 3 nanowires on indium foil is disclosed. The nanowires of In 2 O 3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In 2 O 3 nanoarray may have a nanowire density of 200-300 nanowires per μm 2 indium foil and a band gap energy of 2.63-3.63 eV. The In 2 O 3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

First claim

Opening claim text (preview).

The invention claimed is: 1. A single step method for producing an In 2 O 3 nanoarray of nanowires on indium foil, comprising: subjecting an electrochemical cell to 15-25 V to anodize the indium foil, wherein the electrochemical cell comprises: a working electrode comprising indium foil in contact with a non-aqueous electrolyte solution, a reference electrode, and a counter electrode in contact with the electrolyte solution, wherein nanowires of In 2 O 3 are grown on the indium foil, forming the In 2 O 3 nanoarray, wherein the In 7 O 3 is in a cubic crystal phase, wherein an end of each nanowire is attached to the indium foil and the nanowires have a length of 100-200 nm, and wherein the longitudinal axis of each nanowire is substantially perpendicular to the indium foil. 2. The method of claim 1 , wherein the nanowires have substantially circular cross-sections. 3. The method of claim 1 , wherein the nanowires have diameters of 30-50 nm. 4. The method of claim 1 , wherein the In 2 O 3 nanoarray has a nanowire density of 200-300 nanowires per μm 2 indium foil. 5. The method of claim 1 , wherein the In 2 O 3 nanoarray has a band gap energy of 2.63-3.63 eV. 6. The method of claim 1 , wherein the electrolyte solution comprises polyethylene glycol at a weight percentage of 1-8 wt % relative to a total weight of the electrolyte solution. 7. The method of claim 1 , wherein the electrolyte solution comprises one or more electrolytes at a concentration of 0.2-1.0 M. 8. The method of claim 1 , wherein the electrolyte solution comprises at least one electrolyte selected from the group consisting of chromic acid, oxalic acid, sulfuric acid, phosphoric acid, ammonium fluoride, and sodium fluoride. 9. The method of claim 1 , wherein the electrolyte solution is stirred during the subjecting. 10. The method of claim 1 , wherein the reference electrode is a saturated calomel electrode. 11. The method of claim 1 , wherein the counter electrode is in the form of a rod or wire. 12. The method of claim 1 , wherein the electrochemical cell is subjected to a voltage that does not vary by more than 5% of an average value throughout the subjecting.

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What does patent US10844510B2 cover?
A method of forming a one-dimensional nanoarray of In 2 O 3 nanowires on indium foil is disclosed. The nanowires of In 2 O 3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In 2 O 3 nanoarray may have a nanowire density of 200-300 nanowires per μm 2 indium foil and a band gap energy of 2.6…
Who is the assignee on this patent?
Univ King Fahd Pet & Minerals
What technology area does this patent fall under?
Primary CPC classification C30B7/12. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).