Anodization method for the production of one-dimensional (1D) nanoarrays of indium oxide

US10443147B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-10443147-B1
Application numberUS-201816001188-A
CountryUS
Kind codeB1
Filing dateJun 6, 2018
Priority dateJun 6, 2018
Publication dateOct 15, 2019
Grant dateOct 15, 2019

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Abstract

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A method of forming a one-dimensional nanoarray of In 2 O 3 nanowires on indium foil is disclosed. The nanowires of In 2 O 3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In 2 O 3 nanoarray may have a nanowire density of 200-300 nanowires per μm 2 indium foil and a band gap energy of 2.63-3.63 eV. The In 2 O 3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

First claim

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The invention claimed is: 1. A method for producing an In 2 O 3 nanoarray of nanowires on indium foil, comprising: subjecting an electrochemical cell to 15-25 V, the electrochemical cell comprising: a working electrode comprising indium foil in contact with an electrolyte solution and a counter electrode in contact with the electrolyte solution, wherein nanowires of In 2 O 3 are grown on the indium foil, forming the In 2 O 3 nanoarray, wherein an end of each nanowire is attached to the indium foil, and wherein the longitudinal axis of each nanowire is substantially perpendicular to the indium foil. 2. The method of claim 1 , wherein the nanowires have substantially circular cross-sections. 3. The method of claim 1 , wherein the nanowires have diameters of 30-50 nm and lengths of 100-200 nm. 4. The method of claim 1 , wherein the nanowires comprise In 2 O 3 in a cubic crystal phase. 5. The method of claim 1 , wherein the In 2 O 3 nanoarray has a nanowire density of 200-300 nanowires per μm 2 indium foil. 6. The method of claim 1 , wherein the In 2 O 3 nanoarray has a band gap energy of 2.63-3.63 eV. 7. The method of claim 1 , wherein the electrolyte solution has a temperature of 20-30° C. 8. The method of claim 1 , wherein the electrolyte solution comprises polyethylene glycol at a weight percentage of 1-8 wt % relative to a total weight of the electrolyte solution. 9. The method of claim 1 , wherein the electrolyte solution comprises one or more electrolytes at a concentration of 0.2-1.0 M. 10. The method of claim 1 , wherein the electrolyte solution comprises at least one electrolyte selected from the group consisting of chromic acid, oxalic acid, sulfuric acid, phosphoric acid, ammonium fluoride, and sodium fluoride. 11. The method of claim 10 , wherein the electrolyte solution comprises sodium fluoride. 12. The method of claim 1 , wherein before the subjecting, the electrolyte solution is substantially free of an aqueous form of In. 13. The method of claim 1 , wherein the electrolyte solution is stirred during the subjecting. 14. The method of claim 1 , wherein the electrochemical cell further comprises a reference electrode. 15. The method of claim 14 , wherein the reference electrode is a saturated calomel electrode. 16. The method of claim 1 , wherein the counter electrode comprises gold, platinum, or carbon. 17. The method of claim 16 , wherein the counter electrode comprises platinum. 18. The method of claim 1 , wherein the counter electrode is in the form of a rod or wire. 19. The method of claim 1 , wherein the electrochemical cell is subjected to a voltage that does not vary by more than 5% of an average value throughout the subjecting. 20. The method of claim 1 , wherein the indium foil in contact with the electrolyte solution has a length to width ratio of 1:1-2.5:1.

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What does patent US10443147B1 cover?
A method of forming a one-dimensional nanoarray of In 2 O 3 nanowires on indium foil is disclosed. The nanowires of In 2 O 3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In 2 O 3 nanoarray may have a nanowire density of 200-300 nanowires per μm 2 indium foil and a band gap energy of 2.6…
Who is the assignee on this patent?
Univ King Fahd Pet & Minerals
What technology area does this patent fall under?
Primary CPC classification C30B7/12. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 15 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).