Method for the material-saving production of wafers and processing of wafers

Patent metadata

Field	Value
Publication number	US-10843380-B2
Application number	US-201615565499-A
Country	US
Kind code	B2
Filing date	Apr 7, 2016
Priority date	Apr 9, 2015
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

First claim

The invention claimed is:

1. A method for producing a multi-layer assembly the method comprising:
providing a donor substrate for removing a solid layer from the donor substrate;
producing modifications in the donor substrate in order to specify a crack course;
providing a carrier substrate for holding the solid layer;
bonding the carrier substrate to the donor substrate by means of a bonding layer, wherein the carrier substrate is provided for increasing mechanical strength of the solid layer for further processing, which solid layer is to be removed;
arranging or producing a stress-producing layer on the carrier substrate;
thermally loading the stress-producing layer in order to produce stresses in the donor substrate, wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer from the donor substrate such that the solid layer is removed together with the bonded carrier substrate.

2. The method according to claim 1 , wherein the bonding layer connects the solid layer and the carrier substrate to one another by means of a substance-to-substance bond and is destructible by means of radiation from a radiation source or a free-flowing substance.

3. The method according to claim 2 , wherein the stress-producing layer is removed from the carrier substrate after removing the solid layer from the donor substrate and/or a material layer is produced on the solid layer, wherein a structural weakening of the carrier substrate and/or of the solid layer is effected prior to the production of the material layer.

4. The method according to claim 3 , wherein the carrier substrate is used repeatedly to produce a multi-layer assembly, wherein the solid layer is removed from the carrier substrate prior to the repeated provision, and the carrier substrate is treated prior to the repeated provision.

5. The method according to claim 4 , wherein a sacrificial layer is arranged or produced on the carrier substrate prior to the arrangement or production of the stress-producing layer on the carrier substrate, wherein the stress-producing layer is arranged or produced on the sacrificial layer.

6. The method according to claim 5 , wherein the stress-producing layer comprises a polymer, wherein the stress-producing layer is temperature-controlled to a temperature below a glass transition temperature of the stress-producing layer.

7. The method according to claim 6 , wherein the modifications are cracks in a crystal lattice and/or material portions of the donor substrate, and/or the modifications are produced by means of laser beams which are introduced via an outer surface of the donor substrate by a laser device.

8. The method according to claim 7 , wherein the laser device is configured so that laser beams emitted by the laser device produce the modifications at predetermined locations within the donor substrate, wherein the laser device is adjusted so that the laser beams emitted by the laser device for producing the modifications penetrate into the donor substrate to a defined depth of less than 200 μm, wherein the laser device has a pulse duration of below 10 ps.

9. The method according to claim 8 , wherein:
the laser device comprises a femtosecond laser and the energy of the laser beams of the femtosecond laser is chosen so that damage propagation of each modification in the donor substrate is smaller than 3-times the Rayleigh length;
the wavelength of the laser beams of the femtosecond laser is chosen so that absorption by the donor substrate is smaller than 10 cm −1 ; and/or
the modifications in each case are produced as a result of a multi-photonic excitation effected by the femtosecond laser.

Assignees

• Siltectra Gmbh

Inventors

• Schilling Franz
• Drescher Wolfram
• Richter Jan

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• B28D1/221 Primary

  by thermic methods · CPC title

• H10F71/1395

  for thin-film devices · CPC title