Substrate treating apparatus and substrate treating method
US-2024030057-A1 · Jan 25, 2024 · US
US10837121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10837121-B2 |
| Application number | US-201715470268-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 27, 2017 |
| Priority date | Mar 28, 2016 |
| Publication date | Nov 17, 2020 |
| Grant date | Nov 17, 2020 |
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Embodiments described herein generally relate to a susceptor support for supporting a susceptor in a deposition process. The susceptor support includes a shaft, a plate with a first major surface coupled to the shaft, and a support element extending from a second major surface of the plate. The plate may be made of a material that is optically transparent to the radiation energy from a plurality of energy sources disposed below the plate. The plate may have a thickness that is small enough to minimize radiation transmission loss and large enough to be thermally and mechanically stable to support the susceptor during processing. The thickness of the plate may range from about 2 mm to about 20 mm.
Opening claim text (preview).
The invention claimed is: 1. An apparatus, comprising: a shaft; a plate having a bottom surface in contact with the shaft, wherein the plate comprises quartz, fused quartz, alumina, sapphire, or yttria, and the plate has a thickness ranging from about 2 mm to about 20 mm; and a support element extending from a top surface of the plate, wherein the support element comprises a plurality of cylindrical posts, and each cylindrical post of the plurality of cylindrical posts comprises a wall and a tapered portion connected to the wall. 2. The apparatus of claim 1 , wherein the plate has a thickness ranging from about 4 mm to about 8 mm. 3. The apparatus of claim 1 , wherein the tapered portion comprises a linear taper. 4. The apparatus of claim 1 , wherein the tapered portion comprises a curved taper. 5. The apparatus of claim 1 , further comprising a hollow cylinder extending from the top surface of the plate, wherein the plurality of cylindrical posts are disposed radially outward of the hollow cylinder. 6. The apparatus of claim 1 , wherein the support element comprises quartz, fused quartz, silicon carbide, silicon nitride, silicon carbide coated graphite, glassy carbon coated graphite, silicon nitride coated graphite, glassy carbon, graphite, silicon carbide coated quartz, or glassy carbon coated quartz. 7. A process chamber, comprising: a first enclosure member; a second enclosure member; a susceptor support, wherein at least a portion of the susceptor support is disposed between the first enclosure member and the second enclosure member, wherein the susceptor support comprises: a shaft; a plate having a bottom surface in contact with the shaft, wherein the plate comprises quartz, fused quartz, alumina, sapphire, or yttria, and the plate has a thickness ranging from about 2 mm to about 20 mm; and a support element extending from a top surface of the plate, wherein the support element comprises a plurality of cylindrical posts, and each cylindrical post of the plurality of cylindrical posts comprises a wall and a tapered portion connected to the wall; and a plurality of energy sources disposed facing the second enclosure member. 8. The process chamber of claim 7 , further comprising a susceptor disposed on the susceptor support, wherein a distance between the susceptor and the susceptor support ranges from about 10 mm to about 60 mm. 9. An apparatus, comprising: a shaft; a plate having a bottom surface in contact with the shaft, wherein the plate comprises quartz, fused quartz, alumina, sapphire, or yttria, and the plate has a thickness ranging from about 2 mm to about 20 mm; and a support element extending from a top surface of the plate, wherein the support element comprises a hollow cylinder having an inside diameter and a thickness, and a sum of the inside diameter and the thickness is less than a diameter of the plate. 10. The apparatus of claim 9 , wherein the support element comprises quartz, fused quartz, silicon carbide, silicon nitride, silicon carbide coated graphite, glassy carbon coated graphite, silicon nitride coated graphite, glassy carbon, graphite, silicon carbide coated quartz, or glassy carbon coated quartz. 11. The apparatus of claim 9 , further comprising a plurality of cylindrical posts extending from the top surface of the plate. 12. The apparatus of claim 11 , wherein the plurality of cylindrical posts is disposed radially outward of the hollow cylinder. 13. The apparatus of claim 11 , wherein each of the plurality of cylindrical posts comprises a wall and a tapered portion connected to the wall. 14. The apparatus of claim 13 , wherein the tapered portion comprises a linear taper.
characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title
characterised by edge clamping, e.g. clamping ring · CPC title
characterised by the mechanical construction of the susceptor, stage or support · CPC title
the substrate being supported substantially horizontally · CPC title
by irradiation or electric discharge · CPC title
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