MEMS sensors with selectively adjusted damping of suspension

US10822225B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10822225-B2
Application numberUS-201715643174-A
CountryUS
Kind codeB2
Filing dateJul 6, 2017
Priority dateDec 27, 2016
Publication dateNov 3, 2020
Grant dateNov 3, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers provide selectively adjusted damping of the one or more suspension structures.

First claim

Opening claim text (preview).

What is claimed is: 1. A micro-electro-mechanical systems (MEMS) device, comprising: a substrate; at least two proof masses planarly aligned with each other over the substrate, a set of suspension structures that connect the proof masses to the substrate; one or more metallized layers on the suspension structures; at least two sense electrodes coupled to the substrate, the sense electrodes adjacent to and separate from the proof masses, the sense electrodes configured to measure a charge generated by out-of-plane motion of the proof masses; and a pick-off comb located between the proof masses, the pickoff comb configured to measure the charge generated by in-plane out-of-phase motion of the proof masses; wherein the one or more metallized layers provide selectively adjusted damping of the suspension structures. 2. The MEMS device of claim 1 , wherein the suspension structures comprise silicon; and the one or more metallized layers comprise platinum, titanium, zinc, aluminum, copper, nickel, silver, gold, chromium, molybdenum, or combinations thereof. 3. The MEMS device of claim 1 , wherein the one or more metallized layers comprise: a composite thin film of platinum and titanium. 4. The MEMS device of claim 3 , wherein the suspension structures comprise silicon. 5. The MEMS device of claim 1 , wherein the one or more metallized layers have a thickness with respect to a thickness of the suspension structures in a ratio range of about 1:100 to about 1:10. 6. The MEMS device of claim 1 , wherein the MEMS device comprises a gyroscope or an accelerometer. 7. The MEMS device of claim 1 , further comprising at least two drive combs that are respectively adjacent to each of the proof masses on opposing sides from the pick-off comb, the drive combs configured to generate an electrostatic force to drive the MEMS device. 8. The MEMS device of claim 1 , wherein the set of suspension structures include a set of drive suspensions that connect the proof masses to a pair of opposing base suspensions, which are connected to a set of anchor suspensions; wherein the anchor suspensions are respectively connected to a pair of anchors coupled to the substrate. 9. A method of fabricating a micro-electro-mechanical systems (MEMS) device, the method comprising: forming at least two proof masses planarly aligned with each other and connected to a substrate with a set of suspension structures; forming at least two sense electrodes on the substrate adjacent to and separate from the proof masses, the sense electrodes configured to measure a charge generated by out-of-plane motion of the proof masses; forming a pick-off comb between the proof masses, the pick-off comb configured to measure the charge generated by in-plane out-of-phase motion of the proof masses; and depositing one or more metallized layers on the suspension structures to selectively adjust damping of the suspension structures. 10. The method of claim 9 , wherein the one or more metallized layers are deposited by a physical vapor deposition process comprising sputtering or evaporation. 11. The method of claim 9 , wherein the one or more metallized layers are deposited to have a thickness with respect to a thickness of the suspension structures in a ratio range of about 1:100 to about 1:10. 12. The method of claim 9 , wherein the suspension structures comprise silicon; and the one or more metallized layers comprise platinum, titanium, zinc, aluminum, copper, nickel, silver, gold, chromium, molybdenum, or combinations thereof. 13. The method of claim 9 , wherein the fabricated MEMS device comprises a gyroscope or an accelerometer. 14. A micro-electro-mechanical systems (MEMS) package, comprising: at least one MEMS inertial sensor comprising: at least two proof masses planarly aligned with each other and connected to a substrate through a set of suspension structures; one or more metallized layers on the suspension structures, wherein the one or more metallized layers provide selectively adjusted damping of the suspension structures; at least two sense electrodes coupled to the substrate, the sense electrodes adjacent to and separate from the proof masses, the sense electrodes configured to measure a charge generated by out-of-plane motion of the proof masses; and a pick-off comb located between the proof masses, the pickoff comb configured to measure the charge generated by in-plane out-of-phase motion of the proof masses; a getter structure adjacent to the at least one MEMS inertial sensor; and a set of bond pads electrically connected to the at least one MEMS inertial sensor. 15. The MEMS package of claim 14 , wherein the one or more metallized layers have a thickness with respect to a thickness of the suspension structures in a ratio range of about 1:100 to about 1:10. 16. The MEMS package of claim 14 , wherein the at least one MEMS inertial sensor comprises a gyroscope that is operated in a mode-match configuration with a lower bandwidth and a higher sensitivity. 17. The MEMS package of claim 16 , further comprising: a second gyroscope without one or more metallized layers for adjusted damping, the second gyroscope operated in a split mode with a higher bandwidth and a lower sensitivity. 18. The MEMS package of claim 14 , wherein the at least one MEMS inertial sensor comprises an accelerometer. 19. The MEMS package of claim 18 , further comprising a gyroscope without one or more metallized layers for adjusted damping. 20. The MEMS package of claim 14 , wherein the at least one MEMS inertial sensor includes a plurality of gyroscopes and accelerometers configured as an inertial measurement unit (IMU).

Assignees

Inventors

Classifications

  • Devices controlled by mechanical forces, e.g. pressure · CPC title

  • B81B3/0059Primary

    Constitution or structural means for controlling the movement not provided for in groups B81B3/0037 - B81B3/0056 · CPC title

  • Accelerometers · CPC title

  • Electrodes · CPC title

  • Inertial sensors · CPC title

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What does patent US10822225B2 cover?
A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers…
Who is the assignee on this patent?
Honeywell Int Inc
What technology area does this patent fall under?
Primary CPC classification B81B3/0059. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Nov 03 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).