Semiconductor detectors integrated with Bragg reflectors

Patent metadata

Field	Value
Publication number	US-10818807-B2
Application number	US-201916253191-A
Country	US
Kind code	B2
Filing date	Jan 21, 2019
Priority date	Jan 21, 2019
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.

First claim

What is claimed is:

1. A photodetector comprising:
a substrate;
a Bragg reflector disposed on the substrate, wherein the Bragg reflector comprises alternating layers of a semiconductor material and a dielectric material; and
a semiconductor detector disposed on the Bragg reflector.

2. The photodetector of claim 1 , wherein the alternating layers of the Bragg reflector include the semiconductor material as a top layer and the dielectric material as a bottom layer disposed on the substrate.

3. The photodetector of claim 2 , wherein the semiconductor detector is disposed in a recessed portion of the top layer of the Bragg reflector.

4. The photodetector of claim 3 , wherein the substrate includes a bulk semiconductor substrate or a semiconductor-on-insulator substrate.

5. The photodetector of claim 2 , wherein the top layer of the Bragg reflector includes doped regions.

6. The photodetector of claim 1 , wherein the semiconductor detector includes a germanium containing compound.

7. The photodetector of claim 1 , further comprising an anti-reflection layer disposed on the semiconductor detector.

8. The photodetector of claim 7 , wherein the semiconductor detector has top and side surfaces that are covered by the anti-reflection layer, wherein the anti-reflection layer generates stress on the semiconductor detector.

9. The photodetector of claim 8 , wherein the anti-reflection layer includes a nitride compound.

10. A photodetector comprising:
a substrate;
a plurality of Bragg reflectors disposed on the substrate, wherein each Bragg reflector comprises alternating layers of a semiconductor material and a dielectric material;
an inter-array dielectric layer separating each Bragg reflector; and
one or more semiconductor detectors disposed on each Bragg reflector.

Assignees

• Globalfoundries Inc

Inventors

• Jacob Ajey Poovannummoottil
• Letavic Theodore J
• Thomas Abu
• Bian Yusheng

Classifications

• H10F77/306

  for devices having potential barriers · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F77/413 Primary

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• G02B1/113

  using inorganic layer materials only · CPC title

• G02B5/0816

  Multilayer mirrors, i.e. having two or more reflecting layers (G02B5/0883, G02B5/0891 take precedence) · CPC title