Power semiconductor module with heat dissipation plate

Patent metadata

Field	Value
Publication number	US-10818573-B2
Application number	US-201515753763-A
Country	US
Kind code	B2
Filing date	Aug 26, 2015
Priority date	Aug 26, 2015
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.

First claim

The invention claimed is:

1. A structure comprising:
a ceramic board;
a heat dissipation plate thermally connected to a heating element; and
a resin region having a resin material that immobilizes the heating element and the heat dissipation plate, wherein
the heat dissipation plate includes
a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material,
a wall portion that directly contacts the resin material and that is formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region,
the ceramic board consists of an Al base plate, a ceramic insulator, and Al wiring, and
the Al wiring, the Al base, the fin portion, the wall portion, and a tapered surface are integrally formed by molten metal in which molten Al is poured into a mold.

2. The structure according to claim 1 , wherein
the wall portion has a first region and a second region in a periphery of the fin portion, and
the first region is formed to be smaller than the second region in protruding height.

3. The structure according to claim 2 , wherein
the first region is formed to be smaller than the fin in the protruding height.

4. The structure according to claim 1 , wherein
the wall portion has a deformed portion formed along a boundary between the wall portion exposed from the sealing resin material and the resin region.

5. The structure according to claim 2 , wherein
the resin region has a step between a surface in contact with the first region and a surface in contact with the second region.

6. The structure according to claim 2 , wherein
the wall portion has a tapered portion connecting a surface of the first region and a surface of the second region in a boundary portion between the first region and the second region.

7. The structure according to claim 1 , wherein
a tip of the fin is formed on a same plane as an end of the wall portion.

8. The structure according to claim 1 , wherein
the heating element is a power semiconductor device that converts direct current power into alternating current power by a switching operation,
a current terminal electrically connected with the power semiconductor device and which transmits a current is provided, and
the current terminal protrudes from the resin region.

9. The structure according to claim 1 , wherein
the heat dissipation plate has a first base plate and a second base plate, and
the heating element is disposed between the first base plate and the second base plate.

10. An assembly comprising:
the structure according to claim 1 ; and
a waterway structure having flat wall surfaces into which the structure is inserted, wherein
a waterway in which a cooling medium is circulated is formed between the flat wall surface and the heat dissipation surface.

11. The structure according to claim 1 , wherein
the plurality of fins have a first cross sectional shape, and
the wall portion has a second cross sectional shape that is different than the first cross sectional shape.

Assignees

• Hitachi Automotive Systems Ltd

Inventors

• Tsuyuno Nobutake
• Tokuyama Takeshi
• Ide Eiichi

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/07351

  characterised by changes in properties of the die-attach connectors during connecting · CPC title

• H10W72/30

  Die-attach connectors · CPC title