Chemical mechanical polishing method for tungsten

Patent metadata

Field	Value
Publication number	US-10815392-B2
Application number	US-201916290929-A
Country	US
Kind code	B2
Filing date	Mar 3, 2019
Priority date	May 3, 2018
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; nonionic polyacrylamide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive having a negative zeta potential; and, optionally, a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten is inhibited as well as erosion of dielectrics underlying the tungsten.

First claim

What is claimed is:

1. A method of chemical mechanical polishing tungsten, comprising:
providing a substrate comprising tungsten and a dielectric;
providing a chemical mechanical polishing composition, consisting of, as initial components:
water;
an oxidizing agent;
nonionic polyacrylamide;
a colloidal silica abrasive having a negative zeta potential;
a dicarboxylic acid,
a source of iron (III) ions; and,
optionally, a pH adjusting agent;
providing a chemical mechanical polishing pad, having a polishing surface;
creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and
dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate to remove at least some of the tungsten.

2. The method of claim 1 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

3. The method of claim 1 , wherein the chemical mechanical polishing composition, provided consists of, as initial components:
the water;
0.01 to 10 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
20 to 320 ppm of the nonionic polyacrylamide;
0.01 to 10 wt % of the colloidal silica abrasive having a negative zeta potential;
1 to 2,600 ppm of the dicarboxylic acid selected from the group consisting of malonic acid, oxalic acid, maleic acid, malic acid, tartaric acid and salts thereof;
100 to 1,000 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate nonahydrate; and,
optionally, the pH adjusting agent; wherein the chemical mechanical polishing composition has a pH of 1 to 7.

4. The method of claim 3 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

5. The method of claim 1 , wherein the chemical mechanical polishing composition, provided consists of, as initial components:
the water;
0.01 to 10 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
50 to 320 ppm of the nonionic polyacrylamide;
0.01 to 10 wt % of the colloidal silica abrasive having a negative zeta potential;
100 to 1,400 ppm of the dicarboxylic acid, wherein the dicarboxylic acid is malonic acid, salt thereof or mixtures thereof;
100 to 1000 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent; wherein the chemical mechanical polishing composition has a pH of 1 to 7.

6. The method of claim 5 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

7. The method of claim 1 , wherein the chemical mechanical polishing composition, provided consists of, as initial components:
the water;
0.1 to 3 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
80 to 320 ppm of the nonionic polyacrylamide;
0.2 to 2 wt % of the colloidal silica abrasive having a negative zeta potential;
120 to 1,350 ppm of the dicarboxylic acid, wherein the dicarboxylic acid is malonic acid, salt thereof or mixtures thereof;
250 to 500 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent; wherein the chemical mechanical polishing composition has a pH of 2 to 2.5.

8. The method of claim 7 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Rohm And Haas Electronic Cmp Holdings Inc

Inventors

• Ho Lin-Chen
• Tsai Wei-Wen

Classifications

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• B24B37/042 Primary

  operating processes therefor · CPC title

• B24B37/20

  Lapping pads for working plane surfaces · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title